Infineon Technologies BSC016N06NSSCATMA1

Overview

BSC016N06NSSCATMA1 from Infineon is an N-channel 60 V OptiMOS™ Power-MOSFET in PG-VSON-8 package, optimized for synchronous rectification with R_DS(on) = 1.6 mΩ (max), I_D = 234 A (T_C = 25 °C), and Q_g = 71 nC (0–10 V). It features dual-side cooling, 175 °C rated junction, and 100% avalanche tested - deployed in high-efficiency DC/DC converters and server VRMs.

For engineers reviewing the BSC016N06NSSCATMA1 datasheet, BSC016N06NSSCATMA1 pinout, BSC016N06NSSCATMA1 application, or BSC016N06NSSCATMA1 equivalent, key selection criteria include low R_DS(on), gate charge profile for hard-switched/synchronous FET operation, thermal resistance (R_thJC = 0.5 K/W bottom, 0.4 K/W top), and JEDEC-qualified reliability for industrial power stages.

Technical Context

This MOSFET uses trench-based silicon technology to achieve ultra-low on-resistance and fast switching with minimized Q_gd/Q_gs ratio (13 nC / 22 nC typ). Its dual-side cooled PG-VSON-8 package enables simultaneous top- and bottom-side thermal interface, reducing total thermal resistance by up to 40% versus single-side cooled equivalents.

The device is characterized for synchronous rectification: V_GS(th) = 2.8 V (typ), plateau voltage = 4.3 V (typ), and reverse diode t_rr = 61 ns (typ) at 50 A - enabling efficient body-diode commutation in LLC and buck-boost topologies without external Schottky assistance.

Key Specifications

Pinout & Package

PG-VSON-8 (also labeled PG-WSON-8) is a 5 mm × 6 mm, 0.55 mm profile, dual-side cooled surface-mount package with exposed drain paddle on both top and bottom faces. The tab is electrically connected to Drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Compared with IPB015N06N and IRFH7107TRPBF, BSC016N06NSSCATMA1 delivers superior thermal performance via dual-side cooling and optimal Q_g/R_DS(on) balance - making it the preferred choice for high-frequency, high-power-density synchronous rectification where both conduction and switching losses must be minimized.

Availability

BSC016N06NSSCATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom rectifiers, and industrial motor drives requiring stable component supply, long-lifecycle support, and JEDEC-qualified reliability.

Supply support for BSC016N06NSSCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 60 V product line, engineered specifically for high-efficiency, high-current power conversion in datacenter, telecom, and industrial applications where thermal density and switching speed are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current is 165 A at T_C = 100 °C, as specified in Table 2 of the official Infineon datasheet Revision 2.4. This value accounts for thermal de-rating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures, and assumes proper PCB copper area (6 cm²) and vertical mounting in still air.

Does this MOSFET require a gate resistor for safe operation in synchronous buck converters?

Yes - a gate resistor (typically 1.6–3.3 Ω) is recommended to dampen gate-source ringing caused by parasitic inductance and prevent unintended turn-on due to dV/dt coupling. The device's gate resistance is 2.4 Ω (typ), so external series resistance ensures controlled 10–20 ns rise/fall times while maintaining robustness against Miller-induced oscillation.

Can BSC016N06NSSCATMA1 be used as a replacement for BSC014N06NS in existing designs?

No - although both are 60 V OptiMOS™ devices in PG-VSON-8, BSC014N06NS has R_DS(on) = 1.4 mΩ and higher Q_g = 78 nC (0–10 V). Substituting BSC016N06NSSCATMA1 introduces 0.2 mΩ higher conduction loss and slightly lower gate drive demand, requiring re-optimization of gate driver strength and thermal design margins.

Is the top-side thermal pad electrically isolated from the drain?

No - the top-side thermal pad is electrically connected to the drain terminal, as confirmed by Infineon's package outline diagram and thermal test setup description. Any heatsink or thermal interface material contacting the top pad must be electrically insulated unless intentionally designed as part of the drain return path.