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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC018NE2LSATMA1

Name: BSC018NE2LSATMA1
Brand: Infineon Technologies
SKU: BSC018NE2LSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC018NE2LSATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC018NE2LSATMA1.pdf

Description:: MOSFET N-CH 25V 29A/100A TDSON

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Product details

Overview

BSC018NE2LSATMA1 from Infineon Technologies is an N-channel OptiMOS™ power MOSFET rated for 25 V drain-source voltage, 1.8 mΩ maximum R_DS(on) at V_GS = 4.5 V, and 153 A continuous drain current at T_C = 25 °C. It features 100% avalanche testing, low Q_OSS (21 nC), and optimized thermal resistance (R_thJC = 1.8 K/W) for high-efficiency synchronous buck converters in server VRMs and GPU power stages.

For engineers reviewing the BSC018NE2LSATMA1 datasheet, BSC018NE2LSATMA1 pinout, BSC018NE2LSATMA1 application, or BSC018NE2LSATMA1 equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, ultra-low conduction loss at high current, JEDEC-qualified reliability for industrial and computing applications, and SuperSO8 package with exposed drain pad for enhanced thermal performance.

Technical Context

This device is engineered as a high-current, low-voltage switching element in synchronous rectification topologies. Its gate charge profile (Q_G = 39 nC @ 0–10 V, Q_GD = 4.3–6.4 nC) enables fast turn-on/turn-off with minimal switching loss, while the 21 nC output charge (Q_OSS) supports efficient hard-switched operation up to ~1 MHz.

The MOSFET's R_DS(on) remains stable across temperature (1.5–2.3 mΩ over 25–125 °C at V_GS = 10 V), and its reverse diode exhibits low forward voltage (V_SD = 0.85 V @ 30 A, 25 °C) and moderate Q_rr (20 nC), making it suitable for high-frequency, high-duty-cycle synchronous FET roles where body diode conduction is minimized but not eliminated.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage in DC-DC converter high-side or low-side switch position
R_DS(on), max	1.8 mΩ @ V_GS = 4.5 V - Enables <1.4 W conduction loss at 30 A, critical for 48 V–12 V step-down efficiency
I_D, cont.	153 A @ T_C = 25 °C - Supports >300 W power delivery per phase in multi-phase VRMs
Q_OSS	21 nC - Low output charge reduces turn-on energy loss in high-frequency synchronous buck stages
R_thJC	1.8 K/W - Enables direct thermal coupling to heatsink or PCB copper, limiting junction rise to <35 °C at 100 W dissipation
Q_G	39 nC @ 0–10 V - Matches standard gate drivers (e.g., IR35201, MP86933) without requiring external boost or high-current buffers
V_GS(th)	1.2–2.0 V - Ensures robust turn-on margin with 3.3 V or 5 V logic-level control signals

Pinout & Package

Package: PG-TDSON-8 (SuperSO8), 5.15 mm × 6.2 mm footprint with exposed drain pad on bottom side for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain pads)	Drain (D)	Eight parallel internal drain connections tied to exposed copper pad - primary current path and thermal interface
1 (Source)	Source (S)	Leftmost pin (top view) - connects to source node of synchronous FET; used for Kelvin sensing in precision designs
2, 3 (Source)	Source (S)	Adjacent pins - provide low-inductance return path for high di/dt currents in multiphase layouts
4 (Gate)	Gate (G)	Single gate input - requires low-impedance drive (<1.6 Ω series R) to achieve specified 5.5 ns t_d(on)

Key Features

Feature	Design Value
Optimized for high-performance buck converters	Low Q_G/Q_GD ratio (6.2) and fast switching (t_r = 4.4 ns) reduce dead-time losses and improve light-load efficiency
Very low R_DS(on) @ 4.5 V	1.8 mΩ enables use with 3.3 V or 4.5 V PWM controllers without level-shifting, simplifying gate driver design
100% avalanche tested	Guarantees ruggedness against inductive kickback in VRM hot-plug and load-dump events without derating
Superior thermal resistance	R_thJC = 1.8 K/W allows >100 W continuous dissipation with minimal heatsinking in compact 1U server modules

Applications

Server Voltage Regulator Modules

GPU Power Delivery Systems

Use Scenario: High-current, multi-phase 48 V-to-12 V or 12 V-to-1 V conversion supplying CPUs/GPUs in datacenter servers.

IC Role / Device Role / Timing Role: Synchronous low-side FET in interleaved buck stages, operating at 300–600 kHz with precise gate timing.

Use Value: 1.8 mΩ R_DS(on) cuts conduction loss by >35% vs. legacy 3.0 mΩ devices, enabling 95%+ full-load efficiency at 300 A per rail.

Use Scenario: Compact, high-density power stage for discrete or integrated GPU VRMs in gaming and AI accelerators.

IC Role / Device Role / Timing Role: High-current, low-V_DS switching FET paired with dedicated gate driver ICs (e.g., MP2960) for tight duty-cycle control.

Use Value: 21 nC Q_OSS and 39 nC Q_G allow clean 500 kHz switching with <10 ns dead time, minimizing shoot-through risk and improving transient response.

Industrial Motor Drive Inverters

High-Efficiency Telecom Rectifiers

Use Scenario: Low-voltage, high-current half-bridge legs in BLDC motor drives for factory automation and robotics.

IC Role / Device Role / Timing Role: Low-side switch in 24 V or 48 V inverters, commutated with microsecond-level precision.

Use Value: 153 A I_D rating and 100% avalanche test ensure survival during motor stall and regenerative braking surges.

Use Scenario: Secondary-side synchronous rectification in isolated 48 V telecom PSUs delivering 12 V/200 A outputs.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes in LLC or phase-shifted full-bridge topologies.

Use Value: 0.85 V V_SD and 20 nC Q_rr reduce reverse recovery loss and EMI, improving efficiency by 1.2% at 50% load vs. SiC diodes in cost-sensitive designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 2.1 mΩ @ 4.5 V; Q_G = 32 nC; SO-8 package with smaller thermal pad	Lower current rating (100 A) and higher R_thJA (62 K/W) limit use to ≤150 W single-phase designs	Select when board space is constrained and thermal budget allows 10–15 °C higher junction rise
DMTH10H025LPS-13	R_DS(on) = 2.5 mΩ @ 4.5 V; Q_OSS = 29 nC; PowerDI5060 package with dual-side cooling	Higher switching loss due to elevated Q_OSS; better suited for <300 kHz operation with lower gate drive strength	Prefer for cost-sensitive telecom rectifiers where 2.5 mΩ R_DS(on) meets efficiency targets and layout supports dual-side thermal management

Compared with IRLHS6342TRPBF and DMTH10H025LPS-13, BSC018NE2LSATMA1 delivers the lowest R_DS(on) and best Q_OSS/R_DS(on) ratio, making it optimal for high-current, high-frequency VRMs where conduction loss dominates and thermal headroom is limited.

Availability

BSC018NE2LSATMA1 is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery systems, industrial motor drives, and telecom rectifiers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BSC018NE2LSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™ 5 family, designed specifically for high-efficiency, high-current DC-DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and ruggedness are mandatory.

FAQ

What is the maximum continuous drain current for BSC018NE2LSATMA1 at 100 °C case temperature?

At T_C = 100 °C and V_GS = 10 V, the maximum continuous drain current is 97 A. This value is derived from thermal de-rating curves in the datasheet (Diagram 2) and reflects safe operation under sustained high-temperature conditions typical in enclosed server chassis.

Does BSC018NE2LSATMA1 support 3.3 V gate drive in practice?

Yes - with V_GS(th) ranging from 1.2 V to 2.0 V and R_DS(on) = 1.8 mΩ specified at V_GS = 4.5 V, the device fully enhances at 3.3 V in most applications. Measured R_DS(on) at 3.3 V is ~2.4 mΩ (per Diagram 6), yielding acceptable conduction loss in thermally managed designs.

How is the SuperSO8 package thermally optimized compared to standard SO-8?

The SuperSO8 (PG-TDSON-8) package features an enlarged, fully exposed copper drain pad on the bottom surface, providing direct thermal conduction to the PCB. Its R_thJC of 1.8 K/W is ~4× lower than standard SO-8 (typically >7 K/W), enabling >2× higher power density in compact VRM layouts.

Is BSC018NE2LSATMA1 suitable for paralleling multiple units in a single phase?

Yes - its positive temperature coefficient for R_DS(on) (Diagram 9) ensures inherent current sharing stability. Layout symmetry, matched gate drive paths, and Kelvin source routing are required to maintain balance; typical designs use 2–4 units per phase for >400 A output rails.

BSC018NE2LSATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2800 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC018NE2LSATMA1 FAQ

1.How can I place an order for BSC018NE2LSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC018NE2LSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC018NE2LSATMA1 reliable?

The price and inventory of BSC018NE2LSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC018NE2LSATMA1 is usually 5 days.

3.What payment methods are accepted for BSC018NE2LSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC018NE2LSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC018NE2LSATMA1?

BSC018NE2LSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC018NE2LSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC018NE2LSATMA1?

For technical support, including BSC018NE2LSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC018NE2LSATMA1 requirements.

6.How does Aetrix verify that BSC018NE2LSATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC018NE2LSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC018NE2LSATMA1 meets industry standards.

7.What is the process for return or replacement of BSC018NE2LSATMA1?

All BSC018NE2LSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC018NE2LSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC018NE2LSATMA1 part is unused and in its original packaging.

Return procedure for BSC018NE2LSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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