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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC019N04LSTATMA1

Name: BSC019N04LSTATMA1
Brand: Infineon Technologies
SKU: BSC019N04LSTATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC019N04LSTATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: BSC019N04LSTATMA1.pdf

Description:: MOSFET N-CH 40V

Quantity:: RFQ Add To RFQ list

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Inventory:5,000

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Product details

Overview

BSC019N04LSTATMA1 from Infineon Technologies is an N-channel logic-level Power-MOSFET optimized for synchronous rectification in high-efficiency DC-DC converters, featuring 40 V V_DS, 1.9 mΩ max R_DS(on) at V_GS = 10 V, 161 A continuous drain current at T_C = 25 °C, and 175 °C rated junction temperature - deployed in server VRMs and telecom power supplies.

For engineers reviewing the BSC019N04LSTATMA1 datasheet, BSC019N04LSTATMA1 pinout, BSC019N04LSTATMA1 application, or BSC019N04LSTATMA1 equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, avalanche ruggedness (90 mJ E_AS), thermal resistance (R_thJC = 1.0 K/W), and SuperSO8 package compatibility with high-current PCB layouts.

Technical Context

This OptiMOSTM device uses trench-based silicon process architecture to achieve ultra-low on-resistance while maintaining fast switching performance: Q_g = 41 nC (0–10 V), Q_gd = 6.7–9.4 nC, and t_f/t_r ≤ 4 ns under 50 A load. Its gate threshold voltage (V_GS(th) = 1.2–2.0 V) ensures reliable turn-on with standard logic-level drivers.

The integrated body diode supports synchronous FET operation with V_SD = 0.84 V (T_j = 25 °C, I_F = 50 A) and fast reverse recovery (t_rr = 70–140 ns, Q_rr = 27 nC), minimizing commutation losses in buck and LLC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V/48 V intermediate bus architectures
R_DS(on), max	1.9 mΩ at V_GS = 10 V - Enables <1 W conduction loss at 70 A in VRM high-side switches
I_D, cont.	161 A at T_C = 25 °C - Supports high-current CPU/GPU power delivery with minimal parallel devices
Q_g	41 nC (0–10 V) - Low gate charge enables efficient 500 kHz+ switching with moderate driver strength
E_AS	90 mJ - Fully tested single-pulse avalanche capability improves system robustness against inductive transients
R_thJC	1.0 K/W (bottom side) - Enables direct heatsink mounting for thermal management in compact power stages
T_j max	175 °C - Rated for industrial and telecom environments with extended ambient temperature margins

Pinout & Package

Package: PG-TDSON-8 (SuperSO8), 5.15 mm × 6.2 mm footprint, exposed drain pad on bottom for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, S	Source	Common source connection for internal MOSFET cells; tied to PCB ground plane via multiple pins
4, G	Gate	Single gate input with 0.8–1.6 Ω internal gate resistance; requires low-inductance driver routing
5, 6, 7, 8, D	Drain	Exposed drain pad + four top-side pins - forms low-impedance, high-current path to input capacitor and inductor

Key Features

Feature	Design Value
Optimized for synchronous rectification	Low Q_g/Q_gd ratio and fast t_f/t_r reduce shoot-through risk and improve light-load efficiency in buck converters
100% avalanche tested	Each unit validated to 90 mJ single-pulse energy - eliminates need for external snubbers in hard-switched topologies
Logic-level gate drive	V_GS(th) = 1.2–2.0 V and R_DS(on) = 2.7 mΩ max at V_GS = 4.5 V - compatible with PWM controllers without level-shifting
Superior thermal resistance	R_thJC = 1.0 K/W (bottom) - delivers >90 W dissipation capability with minimal ΔT between junction and heatsink

Applications

Server VRM High-Side Switch

Telecom 48 V Input Buck Converter

Use Scenario: Primary high-side switch in multiphase CPU/GPU VRMs delivering up to 600 A at <1 V output.

IC Role / Device Role / Timing Role: Main power switch operating at 300–600 kHz with precise duty-cycle control and fast transient response.

Use Value: 1.9 mΩ R_DS(on) reduces conduction loss by >35% vs. comparable 2.8 mΩ devices, directly improving full-load efficiency by 0.8–1.2%.

Use Scenario: Step-down converter in 48 V distributed power architecture for base station RF modules.

IC Role / Device Role / Timing Role: High-current synchronous FET in interleaved 2-phase buck stage handling 120 A output.

Use Value: 175 °C rating and 1.0 K/W R_thJC allow sustained 100 A operation without derating in confined airflow environments.

Industrial PLC Power Supply

Automotive ADAS Domain Controller

Use Scenario: Input-stage switch in 24 V industrial SMPS powering programmable logic controllers with wide ambient range.

IC Role / Device Role / Timing Role: Robust main switch handling repetitive load dumps and line surges per IEC 61000-4-5.

Use Value: 90 mJ E_AS withstands 100 V/10 A surge events without failure, eliminating need for external TVS clamping.

Use Scenario: Core power switch in 12 V-to-1.1 V domain controller supplying SoC and radar processors.

IC Role / Device Role / Timing Role: High-frequency synchronous rectifier in dual-phase buck regulator meeting AEC-Q101 stress requirements.

Use Value: Halogen-free, RoHS-compliant construction and JEDEC-qualified industrial validation support automotive qualification pathways.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level Power-MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 2.2 mΩ @ 10 V; Q_g = 48 nC; same SuperSO8 package	Higher conduction loss and gate charge increase switching loss by ~12% at 500 kHz	Preferred where cost sensitivity outweighs 0.3 mΩ R_DS(on) advantage and thermal margin is ample
ON Semiconductor NTMFS4C09NT1G	R_DS(on) = 1.8 mΩ @ 10 V; Q_g = 39 nC; same PG-TDSON-8 footprint	Slightly lower Q_g improves gate drive efficiency but lacks 100% avalanche testing	Selected when gate drive power minimization is critical and system-level surge protection is externally managed

Compared with STL220N4F7AG and NTMFS4C09NT1G, BSC019N04LSTATMA1 offers the lowest R_DS(on) among the three while maintaining industry-leading avalanche ruggedness - making it optimal for high-reliability, high-current synchronous rectification where thermal headroom and transient immunity are design constraints.

Availability

BSC019N04LSTATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom power supplies, and industrial PLC power stages requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.

Supply support for BSC019N04LSTATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to the OptiMOSTM family - engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, telecom, and industrial power systems where low R_DS(on), fast switching, and thermal resilience are primary design drivers.

FAQ

What is the maximum allowable gate-source voltage for BSC019N04LSTATMA1?

The absolute maximum V_GS is ±20 V per datasheet Table 2. Operation beyond ±12 V risks gate oxide degradation; recommended drive range is 0–10 V for logic-level compatibility and reliability. Gate drive circuits must limit overshoot using series resistance and/or clamping diodes to prevent exceeding this rating during switching transitions.

Can BSC019N04LSTATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (see Diagram 9) enables inherent current sharing across paralleled units. Successful implementation requires matched layout symmetry, identical gate drive paths, and shared source inductance minimization. Derating total current by 15% is advised for thermal margin in multi-device arrays.

Is the body diode suitable for freewheeling in non-synchronous designs?

The integrated body diode has V_SD = 0.84 V at 50 A and t_rr = 70–140 ns, making it usable for low-frequency (<100 kHz) freewheeling. However, its Q_rr = 27 nC causes higher switching loss than discrete Schottky diodes - synchronous operation is strongly preferred for efficiency above 200 kHz.

Does BSC019N04LSTATMA1 meet AEC-Q101 for automotive use?

No - it is fully qualified per JEDEC JESD47 for industrial applications (−40 °C to +125 °C ambient, 175 °C T_j), but not AEC-Q101. For automotive ADAS or infotainment power stages, Infineon's AEC-Q101-qualified variants (e.g., BSC019N04LS G) share identical die but undergo additional stress testing and lot traceability protocols.

BSC019N04LSTATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Ta), 161A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 57 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4060 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

BSC019N04LSTATMA1 FAQ

1.How can I place an order for BSC019N04LSTATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC019N04LSTATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC019N04LSTATMA1 reliable?

The price and inventory of BSC019N04LSTATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC019N04LSTATMA1 is usually 5 days.

3.What payment methods are accepted for BSC019N04LSTATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC019N04LSTATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC019N04LSTATMA1?

BSC019N04LSTATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC019N04LSTATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC019N04LSTATMA1?

For technical support, including BSC019N04LSTATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC019N04LSTATMA1 requirements.

6.How does Aetrix verify that BSC019N04LSTATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC019N04LSTATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC019N04LSTATMA1 meets industry standards.

7.What is the process for return or replacement of BSC019N04LSTATMA1?

All BSC019N04LSTATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC019N04LSTATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC019N04LSTATMA1 part is unused and in its original packaging.

Return procedure for BSC019N04LSTATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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