Infineon Technologies BSC080N12LSGATMA1

Overview

BSC080N12LSGATMA1 from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TDSON-8 package, rated for 120 V V_DS, 8.0 mΩ R_DS(on) max at V_GS = 10 V, and 99 A continuous drain current at T_C = 25 °C. It integrates an internal body diode and supports synchronous rectification in high-frequency DC-DC converters.

For engineers reviewing the BSC080N12LSGATMA1 datasheet, BSC080N12LSGATMA1 pinout, BSC080N12LSGATMA1 application, or BSC080N12LSGATMA1 equivalent, key selection criteria include its 79 nC total gate charge, 150 °C maximum junction temperature, low Q_g × R_DS(on) figure-of-merit, and suitability for industrial-grade SMPS and motor control H-bridge stages.

Technical Context

This OptiMOSTM 3 device uses trench-gate superjunction technology to achieve low conduction loss and fast switching with minimal gate drive requirements. Its logic-level gate threshold (1.2–2.4 V) enables direct interfacing with 3.3 V/5 V microcontrollers without level-shifting circuitry.

The MOSFET exhibits a typical output charge Q_oss of 79 nC and reverse recovery charge Q_rr of 220 nC, supporting efficient hard-switched and synchronous rectifier operation up to several hundred kHz. Thermal resistance R_thJC is 0.45 °C/W (bottom side), enabling high-power density thermal design on PCBs with copper cooling pads.

Key Specifications

Pinout & Package

Package: PG-TDSON-8 (exposed drain pad, bottom-side thermal interface, 5 mm × 6 mm footprint).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STL220N12F7AG and IXTP110N10L2, BSC080N12LSGATMA1 delivers superior high-frequency efficiency due to its lower Q_g × R_DS(on) FOM and optimized thermal interface, making it preferred for space-constrained, thermally demanding 400–600 kHz SMPS and motor drives.

Availability

BSC080N12LSGATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial BLDC inverters, telecom DC-DC converters, and EV onboard charger PFC stages requiring stable component supply and JEDEC-qualified industrial reliability.

Supply support for BSC080N12LSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOSTM 3 family-designed specifically for high-efficiency, high-frequency power conversion in industrial and computing applications where low R_DS(on) and fast switching coexist under logic-level gate drive constraints.

FAQ

What is the maximum safe operating voltage for BSC080N12LSGATMA1 in continuous DC operation?

The absolute maximum drain-source voltage is 120 V, verified per JEDEC JESD78 testing. For reliable long-term operation, Infineon recommends limiting V_DS to ≤80% of rating (96 V) under worst-case transient conditions, especially in unclamped inductive loads. The device is not rated for repetitive avalanche operation.

Can BSC080N12LSGATMA1 be driven directly from a 3.3 V microcontroller GPIO without a gate driver?

Yes-the gate threshold voltage range (1.2–2.4 V) and logic-level compatibility allow direct 3.3 V drive, but only for low-frequency (<50 kHz), low-duty-cycle applications. At higher frequencies or full 99 A load, a dedicated gate driver (e.g., 1EDN7512B) is required to ensure fast, low-loss switching and prevent shoot-through in bridge configurations.

How is thermal performance affected if the exposed drain pad is not soldered to PCB copper?

Without soldering pins 5–8 (drain pad) to ≥6 cm² of 70 µm copper, R_thJC degrades from 0.45 °C/W to >18 °C/W (top-side only), causing junction temperature to exceed 150 °C at just 25 A. Full thermal performance requires mandatory bottom-side reflow soldering to a thermally enhanced PCB land pattern per Infineon's PG-TDSON-8 outline drawing.

Does the internal body diode support synchronous rectification in continuous conduction mode (CCM)?

Yes-the body diode has a typical forward voltage of 0.88 V at 50 A and reverse recovery charge Q_rr of 220 nC, enabling controlled synchronous rectification in CCM buck and LLC topologies. However, its trr (107 ns) requires precise gate timing to avoid cross-conduction; external Schottky clamping is recommended for >300 kHz operation.