Infineon Technologies BSC0908NS

Overview

BSC0908NS from Infineon Technologies is an N-channel logic-level Power MOSFET in PG-TDSON-8 package, optimized for high-efficiency DC/DC converters and SMPS applications. It delivers 49 A continuous drain current at T_C = 25 °C with V_GS = 10 V, features 8.0 mΩ max R_DS(on) at 10 V, and is avalanche rated for robustness in hard-switching topologies-used in server VRMs and telecom POL converters.

For engineers reviewing the BSC0908NS datasheet, BSC0908NS pinout, BSC0908NS application, or BSC0908NS equivalent, key selection criteria include its 6.7–8.0 mΩ R_DS(on) at 10 V, 3.4 V gate plateau voltage, 14 nC total gate charge (V_DD = 15 V), JEDEC-qualified reliability, and thermal resistance of 4.2 K/W (junction-to-case, bottom side).

Technical Context

This OptiMOS™ device employs trench-gate superjunction technology to minimize conduction and switching losses simultaneously. Its low Q_g/R_DS(on) figure-of-merit (FOM) enables fast switching with reduced drive power, while the integrated body diode exhibits 5 nC reverse recovery charge (Q_rr) and 0.9 V forward voltage at 30 A.

The MOSFET supports logic-level gate drive (V_GS(th) = 1.2–2.0 V) and operates across –55 °C to +150 °C junction temperature. Its PG-TDSON-8 package provides superior thermal performance via exposed drain pad on PCB bottom side, with R_thJC = 4.2 K/W enabling high-power density designs without heatsinks in many cases.

Key Specifications

Pinout & Package

PG-TDSON-8 is a surface-mount, thermally enhanced 8-pin leadless package with exposed drain pad on the bottom side. The package footprint conforms to JEDEC MO-252 and supports automated reflow assembly with standard stencil design.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level Power MOSFET applications.

Compared with IRLHS6242 and DMTH3004LPS, BSC0908NS offers the best balance of 34 V rating, 8.0 mΩ/14 nC FOM, and 4.2 K/W thermal resistance-making it optimal for 48 V input POL and high-reliability industrial SMPS where voltage margin and thermal headroom are critical.

Availability

BSC0908NS is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and industrial SMPS requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for BSC0908NS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

BSC0908NS belongs to the OptiMOS™ 30 V/34 V logic-level Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC/DC conversion in datacenter, telecom, and industrial power supplies.

FAQ

Is BSC0908NS suitable for 48 V input synchronous buck converters?

Yes. With a 34 V V_DS rating and avalanche capability, BSC0908NS supports 48 V nominal input systems using architectures like active clamp forward or two-switch forward where peak drain voltage remains below 34 V. Its 8.0 mΩ R_DS(on) and low Q_g make it especially effective in high-current, high-frequency POL stages.

What is the recommended PCB layout for thermal performance?

For optimal thermal performance, the exposed drain pad (Pin 8) must be soldered to ≥6 cm² of 70 µm thick copper on the bottom layer, with thermal vias spaced ≤2 mm apart connecting to internal ground planes. Avoid solder mask over the pad and use 0.15 mm stencil aperture for consistent paste volume per IPC-7351B.

Does BSC0908NS require a gate resistor for EMI control?

A 1.6 Ω external gate resistor is used in the datasheet's switching characterization (Figure 16), confirming compatibility with standard gate drivers. While not mandatory, adding 1–3 Ω in series with the gate improves dV/dt control and reduces EMI in high-noise environments-especially when driving at >1 MHz with fast-edge controllers.

How does its body diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD = 0.9 V at 30 A and Q_rr = 5 nC-lower than most discrete 30 V Schottkys (typically 0.45–0.55 V but with higher capacitance). In synchronous rectification, this enables lower total loss than Schottky + MOSFET combinations above ~10 A, particularly at elevated temperatures where Schottky leakage rises sharply.