Infineon Technologies BSC090N03LSGATMA1

Overview

BSC090N03LSGATMA1 from Infineon Technologies is an N-channel logic-level Power-MOSFET in PG-TDSON-8 package, optimized for high-efficiency DC/DC converters and SMPS applications. It delivers 48 A continuous drain current at T_C = 25 °C (V_GS = 10 V), features 9 mΩ max R_DS(on) at V_GS = 10 V, and supports fast switching with 6.7–8.9 nC total gate charge - enabling high-frequency synchronous rectification in server VRMs and POL converters.

For engineers reviewing the BSC090N03LSGATMA1 datasheet, BSC090N03LSGATMA1 pinout, BSC090N03LSGATMA1 application, or BSC090N03LSGATMA1 equivalent, key selection criteria include its 30 V V_DS, JEDEC-qualified avalanche rating (E_AS = 10 mJ), low thermal resistance (R_thJC = 3.9 K/W), and logic-level gate drive compatibility down to 4.5 V.

Technical Context

This OptiMOS™3 MOSFET uses trench-based silicon technology to minimize conduction and switching losses simultaneously. Its gate charge profile (Q_gd = 1.6–2.7 nC, Q_gs = 3.7–4.9 nC) enables precise control of hard-switched and synchronous buck topologies, while the 460–610 pF C_oss supports stable operation under high dv/dt (6 kV/µs).

The device integrates a robust body diode with 29 A continuous forward current and low V_SD (0.89–1.1 V @ 30 A, 25 °C), making it suitable for bidirectional power flow in OR-ing and hot-swap circuits where reverse recovery charge (Q_rr ≤ 10 nC) directly impacts efficiency.

Key Specifications

Pinout & Package

PG-TDSON-8 package with exposed drain pad on bottom side for thermal and electrical connection; 8-pin surface-mount outline compliant with JEDEC MO-252.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level Power-MOSFET applications.

Compared with IRLHS6242PBF and DMN3025LFG-7, BSC090N03LSGATMA1 uniquely balances low R_DS(on), low Q_g, JEDEC-qualified avalanche robustness, and thermal performance in a standard PG-TDSON-8 footprint - making it optimal for high-reliability 30 V SMPS where both efficiency and ruggedness are design-critical.

Availability

BSC090N03LSGATMA1 is available at Aetrix Electronics and suitable for server point-of-load converters, industrial DC/DC modules, telecom hot-swap units, and automotive body control modules requiring stable component supply and long-term production continuity.

Supply support for BSC090N03LSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™3 product line, engineered specifically for high-frequency, high-efficiency power conversion in data center, telecom, and industrial power supplies - emphasizing low FOM, logic-level drive, and rugged avalanche performance.

FAQ

What is the maximum allowable gate-source voltage for BSC090N03LSGATMA1?

The absolute maximum V_GS is ±20 V, as specified in the Absolute Maximum Ratings table. Operation beyond this range risks irreversible gate oxide damage. For reliable logic-level drive, keep V_GS between 0 V and 10 V in normal switching; transient overshoot must be clamped below ±15 V using gate resistors or Zener diodes.

Does BSC090N03LSGATMA1 require a gate driver IC in 500 kHz applications?

Yes - although it is logic-level compatible, its 8.9 nC Q_g demands ≥1 A peak gate current to achieve sub-10 ns rise/fall times at 500 kHz. A dedicated gate driver (e.g., IRS2007, TC4427) is recommended to ensure clean edges, minimize shoot-through risk, and maintain thermal stability under sustained high-frequency operation.

How is thermal performance affected when mounted on a 2-layer versus 4-layer PCB?

On a 2-layer FR4 board with 6 cm² copper (70 µm), R_thJA is 50 K/W. With a 4-layer board and internal ground/power planes, R_thJA improves to ~35 K/W - lowering junction temperature by up to 15 °C at 30 A. The exposed drain pad must be soldered to ≥2 cm² of inner-layer copper for effective heat spreading.

Is BSC090N03LSGATMA1 suitable for linear-mode operation?

No - it is optimized for switching operation only. Linear-mode use exceeds safe operating area (SOA) limits above 10 V V_DS at >5 A, risking thermal runaway. The SOA curve (Figure 3) shows pulsed operation only; continuous linear regulation is not supported by design or qualification.