Infineon Technologies BSC091N03MSCGATMA1

Overview

BSC091N03MSCGATMA1 from Infineon Technologies is an N-channel OptiMOS™3 M-Series Power-MOSFET optimized for 5 V gate drive in notebook CPU VRMs, VGA power stages, and point-of-load (POL) converters. It delivers 39 A continuous drain current at V_GS = 4.5 V and T_C = 25 °C, features 9.1 mΩ R_DS(on) at V_GS = 10 V, and is 100% avalanche tested for robustness in high-frequency synchronous buck topologies.

For engineers reviewing the BSC091N03MSCGATMA1 datasheet, BSC091N03MSCGATMA1 pinout, BSC091N03MSCGATMA1 application, or BSC091N03MSCGATMA1 equivalent, key selection criteria include its 12.1 mΩ R_DS(on) @ 4.5 V, 7.2–9.6 nC total gate charge, 1100–1500 pF input capacitance, JEDEC-qualified reliability, and PG-TDSON-8 thermal performance with R_thJC = 4.5 K/W (bottom side).

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low gate charge × R_DS(on) figure-of-merit (FOM), enabling high-efficiency operation in 300–1000 kHz SMPS designs. Its 30 V V_DS rating and 12.1 mΩ on-resistance at 4.5 V support compact, high-current POL stages where gate drive voltage is constrained to 5 V.

The device integrates a fast, low-Q_rr body diode (Q_rr ≤ 10 nC) and exhibits stable threshold voltage (1–2 V) over −55 to 150 °C, ensuring predictable turn-on behavior in thermally demanding embedded power rails and GPU VRMs.

Key Specifications

Pinout & Package

PG-TDSON-8 package with exposed drain pad on bottom side for thermal and electrical connection; 8-pin surface-mount outline with standard lead pitch and footprint per Infineon PG-TDSON-8 mechanical drawing Rev. 2.2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Compared with IRLHS6242PBF and SIZ204DT-T1-GE3, BSC091N03MSCGATMA1 uniquely combines JEDEC qualification, 100% avalanche testing, and lowest Q_g × R_DS(on) FOM among the three-making it optimal for high-reliability, high-frequency notebook and server VRMs where thermal and fault margins are critical.

Availability

BSC091N03MSCGATMA1 is available at Aetrix Electronics and suitable for notebook CPU VRMs, VGA/GPU power stages, and point-of-load (POL) converters requiring stable component supply, JEDEC-compliant sourcing, and long-lifecycle availability.

Supply support for BSC091N03MSCGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™3 M-Series, designed specifically for high-efficiency, high-current DC/DC conversion in computing and communications infrastructure where 5 V gate drive compatibility and thermal performance are essential.

FAQ

Is BSC091N03MSCGATMA1 suitable for synchronous rectification in a 500 kHz buck converter?

Yes. With 12.1 mΩ R_DS(on) @ 4.5 V, 7.2–9.6 nC Q_g, and 10 nC Q_rr, it supports efficient synchronous rectification at 500 kHz. Its low gate charge minimizes driver losses, and the fast body diode reduces reverse recovery losses-confirmed by measured t_f = 5.2 ns and t_d(off) = 9.5 ns.

What is the maximum continuous drain current at 85 °C case temperature?

At T_C = 85 °C, the device supports approximately 26 A continuous drain current with V_GS = 4.5 V, interpolated from the I_D vs. T_C curve (24 A @ 100 °C, 39 A @ 25 °C). Derating follows linear thermal limits defined by R_thJC = 4.5 K/W and P_tot = 28 W.

Does this MOSFET require a gate resistor for stability in high-speed switching?

A gate resistor of 1–2 Ω is recommended to dampen ringing caused by PCB trace inductance and gate-source capacitance (C_iss = 1100–1500 pF). The internal R_G = 3 Ω provides baseline damping, but external tuning ensures clean 9.6 ns t_d(on) and 4.4 ns t_r waveforms in real layouts.

Can BSC091N03MSCGATMA1 replace older OptiMOS™2 devices in existing designs?

Yes-pin-compatible with previous-generation PG-TDSON-8 OptiMOS™2 30 V MOSFETs (e.g., BSC070N03LSG), offering lower R_DS(on) (12.1 vs. 14.5 mΩ @ 4.5 V) and improved FOM. No layout change is needed, but gate drive strength should be verified due to slightly higher C_iss.