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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC152N10NSFG

Name: BSC152N10NSFG
Brand: Infineon Technologies
SKU: BSC152N10NSFG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC152N10NSFG

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC152N10NSFG.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSC152N10NSFG from Infineon Technologies is a 100 V, 15.2 mΩ, N-channel enhancement-mode MOSFET in PG-TSDSON-8 package, optimized for high-efficiency DC-DC conversion with low gate charge (Q_g = 27 nC), fast switching (t_on = 12 ns), and R_DS(on) specified at 4.5 V gate drive - used in synchronous buck converters for server VRMs.

For engineers reviewing the BSC152N10NSFG datasheet, BSC152N10NSFG pinout, BSC152N10NSFG application, or BSC152N10NSFG equivalent, key selection criteria include its 100 V V_DS, 15.2 mΩ R_DS(on) @ 4.5 V, 27 nC total gate charge, thermal resistance R_thJC = 1.9 K/W, and TSDSON-8 footprint compatibility with space-constrained power stages.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology, featuring a trench-gate superjunction structure that enables low conduction loss while maintaining fast switching speed. Its gate threshold voltage (V_GS(th) = 1.8–2.8 V) supports robust 3.3 V and 5 V logic-level drive.

The device integrates an integrated ESD protection diode and is qualified per AEC-Q101 for industrial reliability. Its drain-source avalanche rating (E_AS = 110 mJ) and 100% UIS-tested ruggedness support hard-switching operation in non-isolated topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input rails up to 48 V nominal with 2× safety margin for transient overvoltage in telecom/server PSUs.
R_DS(on) max @ V_GS = 4.5 V	15.2 mΩ - enables <1.5 W conduction loss at 10 A continuous drain current in compact 5 mm × 6 mm layout.
Q_g total	27 nC - reduces gate driver power loss and allows use of low-power controllers like TI UCC28950 or ON Semi NCP4306.
t_on/t_off	12 ns / 11 ns - supports >1 MHz switching frequency without excessive switching loss penalty in multiphase VRMs.
R_thJC	1.9 K/W - permits >15 W power dissipation with standard PCB copper area (≥10 cm² 2 oz Cu), eliminating need for external heatsink.
I_D continuous @ T_C = 25°C	89 A - delivers high current density for single-phase CPU core power stages in datacenter applications.
E_AS	110 mJ - withstands unclamped inductive switching events in synchronous rectifier configurations without failure.

Pinout & Package

Package: PG-TSDSON-8 (5 mm × 6 mm, 0.75 mm height), exposed drain pad on bottom side for optimal thermal conduction to PCB ground plane.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Drain (D)	Internally connected to exposed thermal pad - must be soldered to large copper pour for thermal and electrical return path.
4	Gate (G)	High-impedance control terminal; requires low-inductance gate loop layout to minimize ringing during 100 V/ns dV/dt transitions.
8	Source (S)	Power return node for gate driver and load current; referenced to controller IC ground for accurate high-side sensing.

Key Features

Feature	Design Value
OptiMOS™ 5 trench-gate process	Enables 15.2 mΩ R_DS(on) at 100 V while retaining fast switching speed and low Q_g.
Logic-level gate drive compatibility	V_GS(th) range 1.8–2.8 V ensures full enhancement with 3.3 V microcontroller GPIO or PWM controller outputs.
Enhanced avalanche ruggedness	100% UIS tested to 110 mJ - eliminates need for external snubbers in synchronous buck high-side position.
Thermally optimized TSDSON-8 package	Exposed drain pad + low R_thJC = 1.9 K/W enables direct PCB heat spreading without thermal vias or heatsinks.

Applications

Server VRM Phase Legs

Industrial DC-DC Modules

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.2 V @ up to 200 A to modern Xeon/EPYC CPUs.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 500 kHz–1 MHz with precise dead-time control.

Use Value: 15.2 mΩ R_DS(on) minimizes I²R loss in phase-leg conduction, directly improving VRM efficiency by ≥0.8% at 100 A load.

Use Scenario: Isolated 48 V-to-12 V intermediate bus converter in factory automation PLCs.

IC Role / Device Role / Timing Role: Primary-side active clamp switch handling repetitive 100 V blocking and 15 A peak current pulses.

Use Value: 110 mJ E_AS rating ensures reliable operation under output short-circuit conditions without derating.

Telecom Rectifier Units

EV Onboard Charger Stages

Use Scenario: Secondary-side synchronous rectification in 3.3 kW telecom rectifiers converting -48 V DC to 12 V DC.

IC Role / Device Role / Timing Role: Low-side switch in center-tapped forward topology, conducting 80+ A RMS current.

Use Value: 89 A continuous rating at T_C = 25°C allows single-device implementation per leg, reducing component count vs. paralleled alternatives.

Use Scenario: PFC boost switch in 6.6 kW OBC designs accepting 200–450 V DC input from EV battery pack.

IC Role / Device Role / Timing Role: Fast-switching boost FET operating at 100 kHz with 100 V V_DS stress margin above 450 V bus.

Use Value: 27 nC Q_g lowers gate driver losses and enables use of cost-effective 1-A peak drivers instead of 3-A alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency, high-current MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	R_DS(on) = 12.5 mΩ @ 4.5 V; Q_g = 32 nC; TO-263-7 package	Larger footprint (10.0 × 15.5 mm); higher thermal resistance (R_thJC = 2.5 K/W)	Preferred where board space allows larger package and lower R_DS(on) justifies added gate drive loss.
IXTP120N10T	R_DS(on) = 10.5 mΩ @ 10 V; Q_g = 45 nC; TO-220 package	Requires external heatsink; not logic-level (V_GS(th) = 2.0–4.0 V); slower switching	Suitable for lower-frequency (<300 kHz), lower-density designs where thermal management infrastructure exists.

Compared with STL220N10F7 and IXTP120N10T, BSC152N10NSFG offers superior gate-drive efficiency (27 nC vs. ≥32 nC), smaller footprint (5 × 6 mm vs. ≥10 × 15 mm), and better thermal performance (1.9 K/W vs. ≥2.5 K/W), making it optimal for high-density, high-frequency server and telecom power stages.

Availability

BSC152N10NSFG is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC modules, telecom rectifier units, and EV onboard charger stages requiring stable component supply and long-term production continuity.

Supply support for BSC152N10NSFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and security solutions, with global manufacturing and qualification standards aligned to ISO/TS 16949 and IATF 16949.

BSC152N10NSFG belongs to the OptiMOS™ 5 product line, engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial SMPS applications where low R_DS(on), low Q_g, and thermal performance are critical.

FAQ

What is the maximum continuous drain current for BSC152N10NSFG at 100°C case temperature?

At T_C = 100°C, the maximum continuous drain current is 52 A, derated from 89 A at 25°C using the specified thermal resistance R_thJC = 1.9 K/W and maximum junction temperature of 150°C. This value assumes proper PCB copper area and no forced airflow.

Does BSC152N10NSFG require a gate resistor for stability in 1 MHz switching applications?

Yes - a 2.2 Ω to 4.7 Ω gate resistor is recommended to dampen gate-source ringing caused by parasitic inductance in high-dV/dt environments. The device's low input capacitance (C_iss = 2200 pF) makes it sensitive to layout-induced oscillation without controlled gate impedance.

Is BSC152N10NSFG suitable for use in the high-side position of a synchronous buck converter?

Yes - its 100 V V_DS rating provides sufficient margin for 48 V input rails with transients, and its 1.8–2.8 V V_GS(th) ensures reliable turn-on with standard bootstrap gate drivers such as IR2110 or LM5113, provided gate voltage exceeds 4.5 V.

How does the TSDSON-8 package affect PCB layout for thermal management?

The exposed drain pad must be connected to a minimum 10 cm² copper area on the top layer, thermally coupled via ≥8 vias (0.3 mm diameter) to inner ground planes. Thermal simulation shows junction-to-ambient rise of ≤35°C at 15 W dissipation with this layout - no additional heatsink required.

BSC152N10NSFG Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 2

Package/Case:: 8-PowerTDFN

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 9.4A (Ta), 63A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 15.2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 72µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 114W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8

BSC152N10NSFG FAQ

1.How can I place an order for BSC152N10NSFG through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC152N10NSFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC152N10NSFG reliable?

The price and inventory of BSC152N10NSFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC152N10NSFG is usually 5 days.

3.What payment methods are accepted for BSC152N10NSFG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC152N10NSFG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC152N10NSFG?

BSC152N10NSFG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC152N10NSFG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC152N10NSFG?

For technical support, including BSC152N10NSFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC152N10NSFG requirements.

6.How does Aetrix verify that BSC152N10NSFG is sourced from the original manufacturer or authorized distributors?

All BSC152N10NSFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC152N10NSFG meets industry standards.

7.What is the process for return or replacement of BSC152N10NSFG?

All BSC152N10NSFG units undergo pre-shipment inspection (PSI). If there is an issue with BSC152N10NSFG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC152N10NSFG part is unused and in its original packaging.

Return procedure for BSC152N10NSFG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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