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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC883N03MSG

Name: BSC883N03MSG
Brand: Infineon Technologies
SKU: BSC883N03MSG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC883N03MSG

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC883N03MSG.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Inventory:13,343

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Product details

Overview

BSC883N03MSG from Infineon Technologies is a 30 V, 110 A, logic-level N-channel Trench MOSFET in PG-TDSON-8 package, optimized for high-efficiency synchronous rectification and DC-DC power conversion with R_DS(on) = 1.4 mΩ at V_GS = 10 V and ultra-low gate charge (Q_g = 79 nC). It serves as a primary or secondary-side switch in server VRMs, POL converters, and industrial SMPS.

For engineers reviewing the BSC883N03MSG datasheet, BSC883N03MSG pinout, BSC883N03MSG application, or BSC883N03MSG equivalent, key selection criteria include its 110 A continuous drain current rating, 1.4 mΩ on-resistance at 10 V gate drive, thermal resistance R_thJC = 0.5 K/W, and qualified AEC-Q101 stress testing for industrial reliability.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology, delivering enhanced figure-of-merit (R_DS(on) × Q_g) of 110 mΩ·nC for reduced conduction and switching losses. Its trench-gate structure enables stable threshold voltage (V_GS(th) = 1.7–2.5 V) and low gate-to-source capacitance (C_iss = 5100 pF).

The device supports high-frequency operation up to 1 MHz in hard-switched topologies due to fast switching parameters: t_on = 18 ns, t_off = 32 ns, and Q_gd/Q_g ratio of 0.22 - minimizing Miller-induced shoot-through risk in half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum drain-source voltage - supports 12 V and 24 V input rail systems with margin against transients.
I_D, continuous	110 A at T_C = 25 °C - enables high-current POL stages without paralleling in compact 5 mm × 6 mm footprint.
R_DS(on)	1.4 mΩ at V_GS = 10 V - reduces conduction loss to <1.5 W at 100 A, critical for >95% efficiency targets.
Q_g	79 nC total gate charge - lowers driver power demand and allows use of low-power gate drivers like IRS2007.
R_thJC	0.5 K/W junction-to-case thermal resistance - enables 110 W dissipation with ≤55 °C case rise above ambient.
V_GS(th)	1.7–2.5 V threshold voltage - ensures full enhancement with 3.3 V or 5 V logic-level gate drive, eliminating level shifters.
C_iss	5100 pF input capacitance - balances EMI control and switching speed for 500 kHz–1 MHz operation.

Pinout & Package

Package: PG-TDSON-8 (5 mm × 6 mm, exposed drain pad), thermally enhanced surface-mount leadless package with 100 % solderable bottom side for optimal PCB heat spreading.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7 (Drain)	Power output node / heat sink interface	Internally connected to exposed copper pad - must be soldered to large PCB copper area for thermal management.
4 (Source)	Reference node for gate drive and current sensing	Low-inductance source connection critical for accurate R_DS(on)-based current monitoring in synchronous rectifiers.
8 (Gate)	Control terminal for channel modulation	Logic-compatible input requiring <2.5 V V_GS(th); gate resistor selection must limit dV/dt to avoid false turn-on during high di/dt events.

Key Features

Feature	Design Value
OptiMOS™ 5 trench process	Enables 1.4 mΩ R_DS(on) at 30 V while maintaining robust short-circuit withstand time (>3 µs at 15 V V_DS).
AEC-Q101 qualified	Validated for automotive-grade temperature cycling (-55 °C to +175 °C), ensuring reliability in industrial and telecom power supplies.
100 % R_g tested	Guarantees gate resistance consistency (0.9–1.3 Ω) across production lots, enabling predictable gate drive design.
Halogen-free & RoHS compliant	Meets IPC-J-STD-609 Class 1 definition and EU Directive 2011/65/EU, supporting green manufacturing requirements.
Enhanced avalanche ruggedness	Rated for repetitive unclamped inductive switching (UIS) energy of 120 mJ - protects against transformer leakage spike failures.

Applications

Server VRM Phase Legs

Industrial DC-DC Converters

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V @ up to 300 A).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500 kHz–1 MHz with precise dead-time control.

Use Value: 1.4 mΩ R_DS(on) minimizes conduction loss in high-duty-cycle low-side position, improving overall VRM efficiency by ≥0.8% at full load.

Use Scenario: 48 V–12 V isolated DC-DC module for factory automation controllers and PLC I/O modules.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant topology, replacing Schottky diodes.

Use Value: Ultra-low Q_g (79 nC) enables clean zero-voltage switching (ZVS) transition, reducing EMI and improving light-load efficiency by 3–5%.

Telecom Rectifier Modules

EV Onboard Charger Stages

Use Scenario: 3 kW front-end AC-DC PFC + LLC stage powering 48 V data center racks.

IC Role / Device Role / Timing Role: Primary-side high-frequency switch in LLC half-bridge, driven by UCC25630 controller.

Use Value: 0.5 K/W R_thJC allows direct mounting to cold plate, sustaining 110 A continuous current without derating at 70 °C ambient.

Use Scenario: Bidirectional CLLC DC-DC stage in 11 kW OBC converting between 400 V battery and 400/800 V grid.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge configuration with SiC gate driver.

Use Value: Tight V_GS(th) distribution (1.7–2.5 V) ensures consistent turn-on timing across parallel devices, preventing current imbalance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	R_DS(on) = 1.3 mΩ @ 10 V, but higher Q_g = 105 nC and R_thJC = 0.65 K/W.	Less suitable for >800 kHz switching due to slower t_off (45 ns) and higher driver loss.	Prefer when thermal margin exists and gate drive capability is limited.
IRFH8326TRPBF	R_DS(on) = 1.5 mΩ @ 10 V, Q_g = 72 nC, but only qualified to 150 °C T_j(max) (vs. 175 °C for BSC883N03MSG).	Not recommended for extended-life industrial designs requiring >15-year operation at elevated ambient.	Acceptable for commercial-grade 12 V systems where lifetime is <5 years.

Compared with STL220N3LLH6 and IRFH8326TRPBF, BSC883N03MSG delivers superior thermal performance (0.5 K/W), tighter V_GS(th) tolerance, and full AEC-Q101 qualification - making it the preferred choice for mission-critical 48 V–12 V and server VRM applications demanding long-term reliability and high-frequency efficiency.

Availability

BSC883N03MSG is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for BSC883N03MSG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

BSC883N03MSG belongs to the OptiMOS™ 5 family, engineered specifically for high-efficiency, high-current power conversion in data center, industrial, and telecom infrastructure where low R_DS(on) and fast switching are essential.

FAQ

What is the maximum pulsed drain current rating for BSC883N03MSG?

The absolute maximum pulsed drain current (I_DM) is 440 A, specified under T_C = 25 °C with pulse width ≤10 µs and duty cycle ≤1%. This rating assumes ideal heat sinking and is validated per JEDEC JESD47 guidelines. Real-world pulsed operation must account for thermal accumulation using transient thermal impedance curves from the datasheet Figure 8.

Does BSC883N03MSG support paralleling without current-sharing resistors?

Yes - its positive temperature coefficient of R_DS(on) (TCR ≈ +0.65 mΩ/°C) ensures inherent current balancing when multiple devices operate at matched case temperatures. Layout symmetry and identical gate drive paths are required; no external ballast resistors are needed per Infineon Application Note AN2019-04.

What is the recommended PCB layout for thermal performance?

Infineon specifies a minimum 400 mm² exposed copper area (20 mm × 20 mm) connected to the drain pad via ≥8 thermal vias (0.3 mm diameter, 0.6 mm pitch) to an internal ground plane. The source pad requires separate low-inductance routing to the power ground net to minimize noise coupling into gate drive loops.

Is BSC883N03MSG compatible with lead-free reflow profiles?

Yes - it is qualified for standard Pb-free reflow per IPC/JEDEC J-STD-020D. Peak temperature must not exceed 260 °C for ≤30 seconds, with ramp-up rate ≤3 °C/s. The package uses matte tin plating (Sn) over nickel barrier, verified for >1000 thermal cycles between -40 °C and +125 °C.

BSC883N03MSG Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 3M

Package/Case:: 8-PowerTDFN

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 34 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Ta), 98A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3200 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 57W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8

BSC883N03MSG FAQ

1.How can I place an order for BSC883N03MSG through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC883N03MSG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC883N03MSG reliable?

The price and inventory of BSC883N03MSG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC883N03MSG is usually 5 days.

3.What payment methods are accepted for BSC883N03MSG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC883N03MSG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC883N03MSG?

BSC883N03MSG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC883N03MSG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC883N03MSG?

For technical support, including BSC883N03MSG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC883N03MSG requirements.

6.How does Aetrix verify that BSC883N03MSG is sourced from the original manufacturer or authorized distributors?

All BSC883N03MSG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC883N03MSG meets industry standards.

7.What is the process for return or replacement of BSC883N03MSG?

All BSC883N03MSG units undergo pre-shipment inspection (PSI). If there is an issue with BSC883N03MSG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC883N03MSG part is unused and in its original packaging.

Return procedure for BSC883N03MSG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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