Infineon Technologies BSC884N03MSG

Overview

BSC884N03MSG from Infineon Technologies is a 30 V, 100 A, logic-level N-channel Trench MOSFET in PG-TDSON-8 package with 1.7 mΩ typical R_DS(on) at V_GS = 10 V, optimized for high-efficiency synchronous buck converters in server VRMs and GPU power stages.

For engineers reviewing the BSC884N03MSG datasheet, BSC884N03MSG pinout, BSC884N03MSG application, or BSC884N03MSG equivalent, this device supports high-frequency switching (up to 1 MHz), low gate charge (Q_g = 45 nC), and thermally enhanced thermal resistance (R_thJC = 0.9 K/W) for compact, high-density DC-DC designs.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology with trench-gate superjunction structure, enabling ultra-low conduction loss and fast switching transitions. Its gate threshold voltage (V_GS(th) = 1.7 V) ensures reliable turn-on with standard 3.3 V or 5 V logic drivers.

The device features integrated source–drain diode with low reverse recovery charge (Q_rr = 45 nC) and soft recovery behavior, reducing EMI and body-diode losses in hard-switched synchronous rectification applications.

Key Specifications

Pinout & Package

Package: PG-TDSON-8 (exposed drain pad, 5.15 mm × 6.25 mm footprint, 1.05 mm height), thermally optimized for PCB copper pour attachment.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) MOSFET applications.

Compared with IRF8721TRPBF and STL220N3LLH6, BSC884N03MSG offers the best balance of ultra-low R_DS(on), moderate Q_g, and industry-leading thermal resistance - making it optimal for space-constrained, high-current VRMs where both conduction and thermal performance dominate.

Availability

BSC884N03MSG is available at Aetrix Electronics and suitable for server VRMs, GPU power stages, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for BSC884N03MSG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The OptiMOS™ product line delivers high-performance power MOSFETs engineered for server, telecom, and industrial DC-DC conversion - emphasizing low R_DS(on), fast switching, and robust thermal design.

FAQ

What is the maximum continuous drain current for BSC884N03MSG at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is derated to 65 A per the datasheet's Safe Operating Area (SOA) curve. This reflects thermal limits of the PG-TDSON-8 package under realistic PCB cooling conditions, not silicon capability alone.

Does BSC884N03MSG support 3.3 V gate drive in logic-level operation?

Yes - with V_GS(th) = 1.2–2.2 V and R_DS(on) = 2.2 mΩ max at V_GS = 4.5 V, the device fully enhances using standard 3.3 V logic outputs. However, R_DS(on) increases ~30 % versus 10 V drive, so conduction loss rises accordingly.

Is the exposed drain pad electrically isolated from other terminals?

No - the exposed drain pad is internally connected to pins 1–3 and 5–7 (all drain terminals). It must be soldered exclusively to the PCB's power ground or drain net; any connection to signal or source planes will cause short-circuit failure.

What is the recommended gate resistor value for 1 MHz switching in a synchronous buck converter?

A 4.7 Ω series gate resistor is recommended to limit peak gate current to ~2.1 A while damping oscillation. This value balances switching speed (t_rise/t_fall ≈ 15 ns) and EMI, assuming a 12 V gate drive swing and 45 nC Q_g.