Infineon Technologies BSC884N03MS G

Overview

BSC884N03MS G from Infineon Technologies is a 30 V, 100 A (pulsed), N-channel enhancement-mode MOSFET in PG-TSDSON-8 package with 1.7 mΩ typical R_DS(on) at V_GS = 10 V, optimized for high-efficiency synchronous buck converters in server VRMs and GPU power stages.

For engineers reviewing the BSC884N03MS G datasheet, BSC884N03MS G pinout, BSC884N03MS G application, or BSC884N03MS G equivalent, key selection criteria include pulsed drain current rating (100 A), gate charge (29 nC total), thermal resistance (R_thJC = 0.5 K/W), and lead-free, halogen-free RoHS compliance per EU Directive 2011/65/EU.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology, delivering low conduction loss via ultra-low R_DS(on) and minimized switching losses through controlled Q_g (29 nC) and Q_gd (7.5 nC). It supports 40 A continuous drain current at T_C = 25 °C with SOA-limited operation up to 100 A in single-pulse mode.

The device features a logic-level gate threshold (V_GS(th) = 1.7–2.5 V), fast switching (t_r = 11 ns, t_f = 8 ns), and robust avalanche capability (E_AS = 100 mJ at T_J = 25 °C), enabling reliable operation in hard-switched DC-DC topologies with tight duty-cycle control.

Key Specifications

Pinout & Package

Package: PG-TSDSON-8 (exposed drain pad), 3.3 mm × 3.3 mm footprint, 0.95 mm height, with top-side source and gate connections and bottom-side drain thermal pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) MOSFET applications.

Compared with IRL8721PBF and SiR626DP, BSC884N03MS G delivers the lowest R_DS(on) in its class with best-in-class thermal resistance, making it optimal for high-frequency, high-power-density VRMs where PCB-area-constrained thermal design dominates.

Availability

BSC884N03MS G is available at Aetrix Electronics and suitable for server VRMs, GPU power stages, and AI accelerator power delivery requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BSC884N03MS G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This part belongs to the OptiMOS™ 5 family, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter and computing infrastructure where low R_DS(on), fast switching, and thermal performance are critical.

FAQ

What is the maximum continuous drain current for BSC884N03MS G at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is derated to 22 A per the Safe Operating Area (SOA) curve in the official Infineon datasheet Rev. 2.0. This reflects thermal limitation-not electrical-so adequate PCB copper area (≥400 mm² 2-oz) is required to sustain higher currents at elevated ambient temperatures.

Does BSC884N03MS G support paralleling for higher current applications?

Yes, BSC884N03MS G supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing across multiple devices. Layout symmetry, matched gate drive paths, and individual gate resistors (≥2.2 Ω) are required to ensure balanced dynamic current distribution and avoid oscillation.

Is the exposed drain pad electrically isolated from the source terminals?

No-the exposed drain pad is internally connected to the drain terminal and must be soldered to a dedicated PCB drain net. It is not isolated; connecting it to source or ground will cause catastrophic short-circuit failure. Thermal vias beneath the pad must connect only to inner-layer drain planes, not to source or signal layers.

What is the recommended gate resistor value for 1 MHz operation in a synchronous buck converter?

For 1 MHz operation with minimal overshoot and ringing, a 2.7 Ω non-inductive gate resistor is recommended based on Infineon's application note AN2015-09. This value balances switching speed (t_r/t_f ≈ 10 ns) against gate driver stress and EMI, assuming a 2-A peak gate driver output capability.