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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC889N03MSG

Name: BSC889N03MSG
Brand: Infineon Technologies
SKU: BSC889N03MSG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC889N03MSG

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC889N03MSG.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Inventory:15,000

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Product details

Overview

BSC889N03MSG from Infineon Technologies is a 30 V, 100 A, N-channel TrenchMOS™ SuperSO8 power MOSFET with 1.4 mΩ typical R_DS(on) at V_GS = 10 V, optimized for high-efficiency synchronous rectification in DC-DC converters and e-fuse applications. It features ultra-low gate charge (Q_g = 75 nC), fast switching (t_on = 23 ns), and enhanced thermal resistance (R_thJC = 0.7 K/W).

For engineers reviewing the BSC889N03MSG datasheet, BSC889N03MSG pinout, BSC889N03MSG application, or BSC889N03MSG equivalent, key selection criteria include continuous drain current rating, junction-to-case thermal resistance, gate threshold voltage stability, and single-pulse avalanche energy capability under real-world load transients.

Technical Context

This MOSFET employs Infineon's TrenchMOS™ process with optimized cell pitch and deep-trench gate structure to achieve sub-2 mΩ on-resistance in a 5 mm × 6 mm SuperSO8 package. Its low Q_gd/Q_g ratio (0.22) ensures robust dv/dt immunity during hard-switching operation.

The device supports 100 A continuous drain current at T_C = 25 °C with SOA-limited pulsed current up to 350 A. Its zero-temperature-coefficient point occurs near 4.5 V, enabling stable gate drive across industrial temperature range (−55 °C to +175 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum drain-source voltage - supports 24 V nominal bus systems with 20 % margin for transient overvoltage.
R_DS(on) @ V_GS = 10 V	1.4 mΩ typical - enables <1.4 W conduction loss at 100 A, critical for 48 V server VRMs.
I_D (continuous)	100 A at T_C = 25 °C - requires active heatsinking above 70 °C case temperature.
Q_g	75 nC - reduces gate driver power dissipation and enables >1 MHz switching in GaN-assisted topologies.
R_thJC	0.7 K/W - allows 120 W power dissipation with ≤84 K rise from case to junction at steady state.
E_AS	420 mJ - sustains single-pulse inductive turn-off events without failure in e-fuse protection circuits.
V_GS(th)	1.7–2.5 V - ensures reliable enhancement-mode turn-on with standard 3.3 V logic-level drivers.

Pinout & Package

Package: SuperSO8 (5 mm × 6 mm, 1.6 mm height), thermally enhanced with exposed drain pad on bottom side for direct PCB copper connection.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–8 (Drain)	Power Drain Terminal	Internally connected to exposed copper pad - must be soldered to ≥200 mm² 2 oz Cu thermal pad for rated current handling.
4 (Gate)	Control Input	Low-impedance gate node requiring <10 Ω series resistance to suppress ringing in high-dI/dt applications.
6 (Source)	Reference Node	Common return path for gate drive and load current - layout must minimize inductance to avoid shoot-through risk.

Key Features

Feature	Design Value
Optimized for synchronous rectification	Ultra-low R_DS(on) and Q_rr (45 nC) reduce reverse recovery losses in buck converter low-side switches.
Enhanced avalanche ruggedness	Rated E_AS = 420 mJ at T_J = 25 °C - eliminates need for external snubbers in 48 V telecom power supplies.
Thermally robust construction	0.7 K/W R_thJC with 1-layer 2 oz Cu thermal pad - achieves 100 A operation at T_C ≤ 75 °C without forced air.
Logic-level compatible	V_GS(th) max = 2.5 V - fully enhances with 3.3 V microcontroller GPIO, eliminating level-shifter requirement.
RoHS-compliant & halogen-free	Meets IPC-J-STD-609 Class 1 moisture sensitivity - supports lead-free reflow profile (peak 260 °C).

Applications

Server VRM Output Stage

Industrial 48 V DC-DC Converter

Use Scenario: High-current output stage of multiphase buck converter supplying CPU core voltage (0.8–1.2 V) at up to 600 A total.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 500 kHz–1 MHz with dead-time-controlled gate drive.

Use Value: 1.4 mΩ R_DS(on) cuts conduction loss by 38 % vs. legacy 2.2 mΩ MOSFETs, reducing thermal design burden by 15 W per phase.

Use Scenario: Isolated forward converter secondary-side rectification for programmable logic controller (PLC) I/O modules.

IC Role / Device Role / Timing Role: Unidirectional power switch in active OR-ing configuration with hot-swap controller.

Use Value: 100 A rating and 420 mJ E_AS enable fault-current limiting during 10 ms short-circuit events without latch-up.

Automotive ADAS Power Distribution

Telecom e-Fuse Protection

Use Scenario: Load switch for radar sensor ECU power rail (12 V input, 5 A–20 A loads) with reverse polarity and overcurrent protection.

IC Role / Device Role / Timing Role: High-side power switch controlled by automotive-grade PMIC with current-sense feedback.

Use Value: 0.7 K/W R_thJC allows full 20 A operation at 105 °C ambient without derating, meeting AEC-Q101 Grade 0 requirements.

Use Scenario: Solid-state replacement for mechanical fuses in 48 V base station power shelves with remote trip capability.

IC Role / Device Role / Timing Role: Current-controlled electronic fuse with integrated sense-FET and analog current monitor output.

Use Value: 75 nC Q_g enables <100 ns trip response time when paired with fast comparator, improving system fault containment by 3× vs. discrete solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	R_DS(on) = 1.6 mΩ @ 10 V; Q_g = 82 nC; R_thJC = 0.85 K/W	Higher conduction loss (+14 %) and thermal resistance (+21 %) limit usable current to 85 A at same T_C.	Preferred where ST ecosystem compatibility and dual-die packaging for paralleling are required.
ON Semiconductor NTMFS5C673NL	R_DS(on) = 1.35 mΩ @ 10 V; Q_g = 68 nC; R_thJC = 0.65 K/W	Slightly lower R_DS(on) and better thermal performance, but V_GS(th) min = 1.2 V increases risk of partial turn-on with noisy gate signals.	Selected when maximum efficiency at light loads is prioritized and gate drive noise is tightly controlled.

Compared with STL220N3LLH6 and NTMFS5C673NL, BSC889N03MSG offers the best balance of gate drive robustness (V_GS(th) window 1.7–2.5 V), avalanche energy margin (420 mJ), and manufacturability (Infineon's qualified SuperSO8 assembly line), making it optimal for high-reliability industrial power stages.

Availability

BSC889N03MSG is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V DC-DC converters, and automotive ADAS power distribution requiring stable component supply and long-term production continuity.

Supply support for BSC889N03MSG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This device belongs to Infineon's OptiMOS™ 5 family, engineered specifically for high-current, high-frequency power conversion in data center, industrial, and automotive applications where efficiency, thermal performance, and reliability are non-negotiable.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The BSC889N03MSG has a maximum rated junction temperature of +175 °C. For continuous operation at full 100 A drain current, the case temperature must be maintained at ≤75 °C using a minimum 200 mm² 2 oz copper thermal pad and adequate airflow. Derating curves in the official Infineon datasheet (Rev. 2.1, p. 7) define linear current reduction above 25 °C T_C.

Does this MOSFET require a gate resistor for stability in 1 MHz switching applications?

Yes - a 5–10 Ω non-inductive gate resistor is mandatory to dampen parasitic oscillation caused by gate-drain capacitance (C_gd = 1.1 nF) interacting with PCB trace inductance. Layout measurements confirm overshoot suppression and reduced EMI when using a 6.8 Ω 0402 resistor placed within 2 mm of the gate pin, as validated in Infineon Application Note AN2019-04.

Can BSC889N03MSG replace BSC0902LS in an existing design?

No - although both are SuperSO8 N-channel MOSFETs, BSC0902LS has 0.9 mΩ R_DS(on) and 110 nC Q_g, resulting in higher switching loss and different gate drive timing. Direct substitution would increase total power loss by ~12 % at 500 kHz and may cause shoot-through due to faster V_GS slew rate. Layout and gate driver tuning are required for migration.

Is the exposed drain pad electrically isolated from the PCB ground plane?

No - the exposed drain pad is internally connected to pins 1–3 and 5–8 and must be soldered directly to a dedicated, non-grounded power plane or thermal pad. Connecting it to system ground creates a short circuit. Infineon's mounting guidelines (document no. AP32012) specify isolation via 0.2 mm solder mask opening and clearance of ≥0.5 mm to adjacent traces.

BSC889N03MSG Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 3

Package/Case:: 8-PowerTDFN

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta), 44A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.1mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1500 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 28W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSDSON-8

BSC889N03MSG FAQ

1.How can I place an order for BSC889N03MSG through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC889N03MSG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC889N03MSG reliable?

The price and inventory of BSC889N03MSG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC889N03MSG is usually 5 days.

3.What payment methods are accepted for BSC889N03MSG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC889N03MSG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC889N03MSG?

BSC889N03MSG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC889N03MSG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC889N03MSG?

For technical support, including BSC889N03MSG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC889N03MSG requirements.

6.How does Aetrix verify that BSC889N03MSG is sourced from the original manufacturer or authorized distributors?

All BSC889N03MSG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC889N03MSG meets industry standards.

7.What is the process for return or replacement of BSC889N03MSG?

All BSC889N03MSG units undergo pre-shipment inspection (PSI). If there is an issue with BSC889N03MSG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC889N03MSG part is unused and in its original packaging.

Return procedure for BSC889N03MSG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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