Infineon Technologies BSD214SNH6327XTSA1

Overview

BSD214SNH6327XTSA1 from Infineon Technologies is an N-channel enhancement-mode small-signal MOSFET in PG-SOT363 (SOT-363) package, rated for 20 V V_DS, 1.5 A continuous drain current at 25 °C, and 250 mΩ R_DS(on) at V_GS = 2.5 V. It features Super Logic-level gate drive compatibility, AEC-Q101 qualification, and avalanche energy rating of 3.7 mJ - used in automotive body control modules and low-voltage power switches.

For engineers reviewing the BSD214SNH6327XTSA1 datasheet, BSD214SNH6327XTSA1 pinout, BSD214SNH6327XTSA1 application, or BSD214SNH6327XTSA1 equivalent, key selection criteria include logic-level gate threshold (0.7–1.2 V), low R_DS(on) at 2.5 V, SOT-363 thermal resistance (250 K/W), and AEC-Q101 compliance for under-hood signal switching.

Technical Context

This MOSFET operates in enhancement mode with a gate threshold voltage centered at 0.95 V and supports direct interface with 2.5 V microcontroller GPIOs. Its 107–143 pF input capacitance and 6–9 pF reverse transfer capacitance enable fast switching (t_r = 7.8 ns, t_f = 1.4 ns) in low-power load switching circuits.

The integrated body diode exhibits 0.8–1.1 V forward voltage at 1.5 A and 8.4 ns reverse recovery time, supporting synchronous rectification and flyback snubbing in compact DC-DC converters where space-constrained SOT-363 packaging is required.

Key Specifications

Pinout & Package

Package: PG-SOT363 (SOT-363), surface-mount, 6-pin, lead-free, halogen-free, 2.1 × 2.0 × 0.9 mm profile.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with BSS138BKS and DMN2041LSD-13, BSD214SNH6327XTSA1 uniquely combines AEC-Q101 qualification, guaranteed 3.7 mJ avalanche energy, and dual-channel integration in SOT-363 - making it optimal for space-constrained, safety-critical automotive switching where both reliability and footprint matter.

Availability

BSD214SNH6327XTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, USB-C power delivery systems, and industrial sensor node power gating requiring stable component supply and long-term lifecycle assurance.

Supply support for BSD214SNH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

The OptiMOS™2 small-signal transistor product line targets logic-level switching in space-constrained, thermally demanding applications - especially automotive subsystems requiring AEC-Q101 compliance and robust transient performance.

FAQ

What is the maximum junction temperature and how does it affect continuous current rating?

The BSD214SNH6327XTSA1 has a maximum junction temperature of 150 °C. At ambient temperatures above 25 °C, its continuous drain current must be derated linearly: 1.5 A at 25 °C drops to 1.2 A at 70 °C due to thermal resistance of 250 K/W on minimal FR4 footprint. This derating ensures safe operation within SOA limits under sustained load.

Is this device suitable for PWM-driven LED dimming at 1–5 kHz?

Yes - with 7.8 ns rise time, 1.4 ns fall time, and 0.8 nC total gate charge, the BSD214SNH6327XTSA1 supports clean switching at 1–5 kHz PWM frequencies. Its low R_DS(on) at 2.5 V ensures minimal conduction loss, while the integrated body diode provides freewheeling path for inductive LED driver topologies.

Does the SOT-363 package support reflow soldering, and what is the peak temperature limit?

Yes - the BSD214SNH6327XTSA1 uses a lead-free PG-SOT363 package qualified for standard Pb-free reflow profiles. The maximum peak soldering temperature is 260 °C for 30 seconds, consistent with IPC/JEDEC J-STD-020 requirements. No special thermal relief or pad design is needed beyond standard SOT-363 land patterns.

How does the avalanche rating impact real-world circuit protection?

The 3.7 mJ single-pulse avalanche energy rating means the device can safely absorb inductive energy from loads like relays or solenoids without failure - provided external gate resistance (R_GS = 25 Ω) and layout minimize parasitic inductance. This eliminates need for external TVS diodes in many 12 V automotive switching nodes.