Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSF024N03LT3G

Name: BSF024N03LT3G
Brand: Infineon Technologies
SKU: BSF024N03LT3G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BSF024N03LT3G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: BSF024N03LT3G.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,963

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BSF024N03LT3G from ON Semiconductor is a 30 V, 106 A N-channel Power MOSFET in CanPAK^TM MG-WDSON-2 package, optimized for high-frequency DC/DC converters with R_DS(on) = 2.4 mΩ @ V_GS = 10 V, Q_g = 53 nC, and double-sided cooling capability. It serves as a primary synchronous rectifier or high-side switch in server VRMs and POL converters.

For engineers reviewing the BSF024N03LT3G datasheet, BSF024N03LT3G pinout, BSF024N03LT3G application, or BSF024N03LT3G equivalent, key selection criteria include its 2.4 mΩ on-resistance at 10 V gate drive, 53 nC total gate charge, 100% avalanche-tested ruggedness, and compatibility with ST's DirectFET® footprint for drop-in layout reuse in space-constrained power stages.

Technical Context

This MOSFET employs trench-gate OptiMOSTM3 technology to minimize conduction and switching losses simultaneously. Its low R_DS(on) × Q_g figure-of-merit (FOM) and reduced parasitic inductance support >1 MHz operation in multiphase buck converters.

The device features a thermally enhanced CanPAK^TM package with exposed drain on both top and bottom surfaces, enabling dual thermal paths. Gate threshold voltage is tightly specified (1–2.2 V), and it is fully characterized for synchronous FET operation with Q_g(sync) = 22 nC at 4.5 V drive.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V input bus applications with margin
R_DS(on) max	2.4 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 60 A continuous current
I_D cont	106 A @ T_C = 25 °C - Supports high-current single-phase or parallel-phase POL designs
Q_g	53 nC @ V_DD = 15 V, I_D = 30 A - Determines gate driver strength requirement for <30 ns turn-on
E_AS	125 mJ - Confirmed single-pulse avalanche energy rating for overvoltage transient robustness
R_thJC	1.0 K/W (bottom) - Enables efficient heat extraction via PCB copper or heatsink contact
C_iss	4100–5500 pF - Impacts Miller effect and gate drive loop stability in hard-switched topologies

Pinout & Package

The BSF024N03LT3G uses the MG-WDSON-2 CanPAK^TM package (ST outline 0703), a surface-mount, leadless, double-sided cooling module with drain-connected top and bottom metal pads and a single gate-source terminal on the side.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Top Pad)	Power output node / Heat sink interface	Electrically and thermally connected to internal die drain; used for top-side cooling
Drain (Bottom Pad)	Main current path / PCB thermal plane	Primary current return path and main thermal interface to PCB copper area
Gate	Switching control input	Low-impedance gate terminal with R_G = 0.5 Ω typical; requires Kelvin connection for high-di/dt stability
Source	Reference node for gate drive and current sensing	Internally tied to substrate; must be routed with minimal inductance for accurate V_GS control

Key Features

Feature	Design Value
Optimized for >1 MHz DC/DC conversion	Low C_iss/C_oss ratio and 5.7 ns t_d(on) enable stable operation in advanced POL regulators
Double-sided cooling architecture	Simultaneous top/bottom thermal interfaces reduce junction-to-ambient ΔT by up to 40% vs. standard SO-8
100% avalanche tested	Guarantees minimum 125 mJ single-pulse E_AS - critical for unclamped inductive switching reliability
Q_g × R_DS(on) FOM = 127 Ω·nC	Industry-leading efficiency trade-off metric for high-frequency, high-current power stages
DirectFET®-compatible footprint	Enables direct PCB layout reuse with ST's STD80N3LH5 and similar ST/IR devices

Applications

Server Voltage Regulator Modules (VRMs)

Point-of-Load (POL) Converters

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) from 12 V bus.

IC Role / Device Role / Timing Role: Synchronous rectifier FET operating at 500 kHz–1.5 MHz with forced continuous conduction mode.

Use Value: 2.4 mΩ R_DS(on) and 22 nC Q_g(sync) at 4.5 V reduce conduction + switching losses by ≥18% vs. legacy 3.5 mΩ alternatives.

Use Scenario: Compact 15–30 A single-phase POL module on FPGA or ASIC carrier boards.

IC Role / Device Role / Timing Role: High-side switch in integrated power stage with integrated driver and current sense.

Use Value: Low-profile (<0.7 mm) CanPAK^TM enables ≤3 mm board height while maintaining 106 A thermal rating.

Telecom Rectifier Modules

Industrial Motor Drive Half-Bridges

Use Scenario: Secondary-side synchronous rectification in isolated 48 V–12 V DC/DC converters for 5G baseband units.

IC Role / Device Role / Timing Role: Isolated gate-driven low-side FET with fast 4.8 ns fall time and low V_SD = 0.81 V body diode.

Use Value: 100% avalanche testing ensures survivability during output short-circuit recovery transients.

Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switching element handling 40 A pulsed current with 400 A I_D,pulse rating.

Use Value: Double-sided cooling sustains 67 A continuous current at T_C = 100 °C without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STD80N3LH5	R_DS(on) = 2.8 mΩ @ 10 V; Q_g = 62 nC; same CanPAK^TM footprint	Slightly higher conduction loss; less optimized for >1 MHz switching	Preferred where layout reuse is mandatory and 10–15% higher loss is acceptable
IRF6642	R_DS(on) = 2.3 mΩ @ 10 V; Q_g = 42 nC; DirectFET® MX package	Lower gate charge but no top-side cooling; different thermal mounting interface	Chosen when gate drive efficiency dominates over thermal density constraints

Compared with STD80N3LH5 and IRF6642, the BSF024N03LT3G uniquely balances ultra-low R_DS(on), industry-leading FOM, and dual thermal interface - making it optimal for thermally dense, high-frequency VRMs where both electrical and thermal performance are co-constrained.

Availability

BSF024N03LT3G is available at Aetrix Electronics and suitable for server VRMs, telecom rectifiers, and industrial POL converters requiring stable component supply, long-term lifecycle assurance, and consistent parametric binning across production lots.

Supply support for BSF024N03LT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud computing, and communications markets.

This device belongs to the OptiMOSTM3 Power-MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in space- and thermal-constrained infrastructure power systems.

FAQ

What is the maximum recommended gate drive voltage for BSF024N03LT3G?

The absolute maximum gate-source voltage is ±20 V, but the device is characterized and optimized for 10 V drive in high-current applications. Using 4.5 V gate drive yields Q_g(sync) = 22 nC and supports synchronous rectifier operation with logic-level controllers. Exceeding 12 V does not significantly reduce R_DS(on) and increases gate oxide stress risk.

Does BSF024N03LT3G require a gate resistor for stability?

Yes - a 1.6 Ω external gate resistor is used in the datasheet's Q_g test condition (V_DD = 15 V, I_D = 30 A) to dampen ringing and limit peak gate current. For 1 MHz+ operation, a 1–2 Ω resistor combined with Kelvin source routing is recommended to suppress parasitic oscillation caused by low C_iss/C_oss and high di/dt.

Can BSF024N03LT3G be mounted with thermal interface material on both sides?

Yes - the CanPAK^TM package is explicitly designed for double-sided cooling. The top drain pad accepts thermal pads or phase-change materials, while the bottom pad connects directly to a 6 cm² copper area per JEDEC J-STD-20. Both interfaces must be electrically isolated from other circuit nodes but may share the same thermal ground plane.

Is the body diode suitable for reverse recovery in synchronous rectification?

The body diode has Q_rr = 28 nC at dI/dt = 400 A/µs and V_R = 15 V, confirming soft recovery behavior. This enables zero-voltage switching (ZVS) transitions in synchronous buck topologies without external Schottky assist, reducing EMI and improving light-load efficiency compared to standard MOSFETs with hard-recovery diodes.

BSF024N03LT3G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 3

Package/Case:: DirectFET™ Isometric MX

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta), 106A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5500 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.2W (Ta), 42W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: MG-WDSON-2

BSF024N03LT3G FAQ

1.How can I place an order for BSF024N03LT3G through Aetrix?

Please submit a Request for Quotation (RFQ) for BSF024N03LT3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSF024N03LT3G reliable?

The price and inventory of BSF024N03LT3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSF024N03LT3G is usually 5 days.

3.What payment methods are accepted for BSF024N03LT3G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSF024N03LT3G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSF024N03LT3G?

BSF024N03LT3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSF024N03LT3G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSF024N03LT3G?

For technical support, including BSF024N03LT3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSF024N03LT3G requirements.

6.How does Aetrix verify that BSF024N03LT3G is sourced from the original manufacturer or authorized distributors?

All BSF024N03LT3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSF024N03LT3G meets industry standards.

7.What is the process for return or replacement of BSF024N03LT3G?

All BSF024N03LT3G units undergo pre-shipment inspection (PSI). If there is an issue with BSF024N03LT3G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSF024N03LT3G part is unused and in its original packaging.

Return procedure for BSF024N03LT3G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …