Infineon Technologies BSF050N03LQ3G

Overview

BSF050N03LQ3G from Infineon Technologies is an n-channel 30 V Power MOSFET in MG-WDSON-2 package, optimized for high-frequency synchronous buck converters in server VRMs. It delivers R_DS(on) = 4.2 mΩ (typ) at V_GS = 10 V, Q_g = 25 nC (typ), and Q_oss = 18 nC - enabling high-efficiency, low-loss power stage design in space-constrained point-of-load applications.

For engineers reviewing the BSF050N03LQ3G datasheet, BSF050N03LQ3G pinout, BSF050N03LQ3G application, or BSF050N03LQ3G equivalent, key selection criteria include gate charge × R_DS(on) figure of merit, double-sided cooling capability, avalanche ruggedness (E_AS = 20 mJ), and compatibility with DirectFET® SQ footprint layouts.

Technical Context

This OptiMOS™30V device uses trench-gate superjunction technology to minimize conduction and switching losses simultaneously. Its low Q_gd/Q_g ratio (2.7/25 nC) supports fast, controllable turn-off with reduced voltage overshoot during hard-switching.

The MG-WDSON-2 package features top- and bottom-side thermal pads for dual-surface heat dissipation, achieving R_thJC = 1.0 K/W (bottom) and enabling >38 A continuous current at T_C = 100 °C - critical for high-power-density server VRM phases.

Key Specifications

Pinout & Package

MG-WDSON-2 is a leadless, double-sided cooling package with exposed drain pad on both top and bottom surfaces. The device has two terminals: Drain (top and bottom copper pads) and Source/Gate (peripheral solderable terminals).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar n-channel 30 V power MOSFET applications.

Compared with IRF6642TRPBF and SI7157DP-T1-GE3, BSF050N03LQ3G uniquely combines double-sided cooling, 20 mJ avalanche energy, and DirectFET® SQ compatibility - making it the only option supporting >38 A continuous current in ultra-thin VRM modules with top-and-bottom thermal management.

Availability

BSF050N03LQ3G is available at Aetrix Electronics and suitable for server on-board VRMs, high-density point-of-load converters, and synchronous buck phase legs requiring stable component supply across multi-year production cycles.

Supply support for BSF050N03LQ3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™30V product line, engineered specifically for high-efficiency, high-power-density voltage regulation in computing infrastructure - targeting next-generation server, datacom, and telecom power delivery standards.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The BSF050N03LQ3G supports 38 A continuous drain current at T_C = 100 °C with V_GS = 10 V, as specified in Table 2 of the 2009 datasheet. This rating assumes proper double-sided cooling via both top and bottom thermal pads and accounts for thermal derating from the 60 A rating at 25 °C.

Is this MOSFET suitable for synchronous rectification in 12 V–1.2 V POL converters?

Yes - its low R_DS(on) (4.2 mΩ typ), low Q_oss (18 nC), and fast body diode (Q_rr = 16 nC, V_SD = 0.86 V) make it well-suited for low-side synchronous rectification. The 0.86 V forward voltage minimizes conduction loss, while the 16 nC Q_rr reduces dead-time-related inefficiency in high-frequency (>1 MHz) designs.

Does the MG-WDSON-2 package require special PCB layout considerations?

Yes - the MG-WDSON-2 demands symmetric copper pour on both top and bottom layers connected to the drain pads, with minimum 6 cm² of 70 µm copper per side for optimal thermal performance. Gate and source pads must be routed with minimal loop area to suppress parasitic inductance, and Kelvin source connections are recommended for accurate current sensing.

How does the 100% avalanche testing impact reliability in server power applications?

Each BSF050N03LQ3G undergoes single-pulse avalanche stress test to guarantee E_AS ≥ 20 mJ. In server VRMs, this ensures survival during transient overloads such as hot-swap events, output short circuits, or inductor saturation - eliminating field failures caused by unclamped inductive kickback without requiring external protection components.