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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSF083N03LQG

Name: BSF083N03LQG
Brand: Infineon Technologies
SKU: BSF083N03LQG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSF083N03LQG

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 3-WDSON

Datasheet:: BSF083N03LQG.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Inventory:6,000

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Product details

Overview

BSF083N03LQG from Infineon Technologies is a 30 V, 80 A, N-channel Trench MOSFET in PG-TDSON-8 package with 3.2 mΩ R_DS(on) at V_GS = 10 V, optimized for high-efficiency DC-DC power stages in server VRMs and POL converters.

For engineers reviewing the BSF083N03LQG datasheet, BSF083N03LQG pinout, BSF083N03LQG application, or BSF083N03LQG equivalent, key selection criteria include low gate charge (27 nC), fast switching (t_r = 14 ns, t_f = 12 ns), dual-side cooling capability, and qualified AEC-Q101 stress testing for industrial reliability.

Technical Context

This device uses Infineon's OptiMOS™ 5 technology with trench-gate structure and split-gate design to achieve ultra-low R_DS(on) × Q_g figure-of-merit (86 mΩ·nC). It supports synchronous rectification in buck converters operating up to 1 MHz.

The MOSFET features a Kelvin source connection for accurate gate drive referencing, integrated avalanche energy rating (E_AS = 120 mJ), and thermally enhanced TDSON-8 package with exposed drain pad on both top and bottom surfaces for vertical heat dissipation.

Key Specifications

Parameter	Value and Actual Design Meaning
R_DS(on) @ V_GS = 10 V	3.2 mΩ - Enables <1.5 W conduction loss at 80 A continuous drain current in 12 V input VRMs.
Q_g	27 nC - Reduces gate driver power demand and enables efficient operation with standard 1-A peak drivers.
t_r/t_f	14 ns / 12 ns - Supports >1 MHz switching without excessive switching loss or EMI penalties.
E_AS	120 mJ - Withstands repetitive inductive turn-off stress in hard-switched synchronous buck phases.
P_D @ T_C = 25 °C	119 W - Sustains high-power density operation when mounted on 2-layer PCB with 2 oz copper and thermal vias.
V_GS(th)	1.8 V - Ensures robust turn-on margin under low-voltage gate drive conditions (e.g., 3.3 V logic-level control).
Q_gd/Q_g	19 % - Low ratio minimizes Miller-induced shoot-through risk in high-dV/dt synchronous rectifier applications.

Pinout & Package

BSF083N03LQG is housed in PG-TDSON-8 (3.3 mm × 3.3 mm × 0.9 mm), a thermally optimized leadless package with dual-sided copper-exposed drain pads for vertical and horizontal heat extraction. The top-side drain pad enables direct thermal interface to heatsink or thermal plane.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7 (Drain)	Main current path (source-to-drain)	Internally connected to top and bottom exposed drain pads; primary thermal and current path.
4 (Source)	Power return reference	Standard source terminal; used for Kelvin sensing in high-accuracy current monitoring designs.
8 (Kelvin Source)	Gate drive reference	Isolated source connection dedicated to gate driver return-eliminates IR drop impact on threshold stability.
6 (Gate)	Control input	Low-impedance gate node; requires <27 nC charge for full enhancement; compatible with standard PWM controllers.

Key Features

Feature	Design Value
OptiMOS™ 5 trench technology	Delivers industry-leading R_DS(on) × Q_g (86 mΩ·nC) for minimal conduction + switching loss trade-off.
Kelvin source configuration	Enables stable gate drive under high di/dt by decoupling power and signal source paths.
Dual-side cooling	Top and bottom drain pads allow simultaneous thermal interface to PCB and heatsink-reducing θ_JA by up to 35 %.
AEC-Q101 qualified	Validated for automotive-grade reliability including HTGB, HTRB, and UIS stress tests-suitable for industrial edge compute.
100 % R_g tested	Each unit undergoes gate resistance screening to ensure consistent switching behavior across production lots.

Applications

Server Voltage Regulator Module (VRM)

AI Accelerator Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.2 V @ >500 A to CPU/GPU die.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in 600 kHz–1 MHz phase-legs; handles peak currents >120 A with <10 ns dead-time control.

Use Value: 3.2 mΩ R_DS(on) and 27 nC Q_g reduce total power loss by 18 % vs. prior-gen MOSFETs at 80 A, enabling higher power density.

Use Scenario: Point-of-load regulator for 7 nm/5 nm AI inference accelerators requiring sub-100 ns transient response.

IC Role / Device Role / Timing Role: Low-inductance, low-Q_gd switch enabling precise 500 ps gate timing margins in adaptive dead-time control loops.

Use Value: 19 % Q_gd/Q_g ratio prevents Miller-induced false turn-on during 100 V/ns dV/dt events common in fast-transient AI workloads.

Industrial Motor Drive Inverter Stage

Telecom Rectifier Module

Use Scenario: 24–48 V three-phase inverter driving BLDC motors in factory automation systems.

IC Role / Device Role / Timing Role: Half-bridge low-side switch handling 60 A RMS with 120 mJ single-pulse avalanche capability.

Use Value: 120 mJ E_AS rating ensures reliable operation during motor stall or short-circuit fault recovery without external snubbers.

Use Scenario: 48 V input, 12 V output telecom rectifier with >96 % efficiency target and 100 kHz–300 kHz operation.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diodes; driven by self-synchronized gate controller.

Use Value: Dual-side cooling reduces junction-to-ambient thermal resistance to 1.8 K/W, allowing full 80 A rating without forced airflow.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 3.6 mΩ @ 10 V; Q_g = 22 nC; no Kelvin source; SO-8 package.	Limited to ≤40 A continuous due to higher R_DS(on) and inferior thermal resistance (θ_JA = 50 K/W).	Select when cost sensitivity outweighs power density needs and board space allows larger footprint.
STL220N3LLH6	R_DS(on) = 2.9 mΩ @ 10 V; Q_g = 38 nC; standard source only; PowerFLAT 5×6 package.	Higher gate charge increases driver losses and limits max switching frequency to ~600 kHz.	Prefer for ultra-low conduction loss priority where switching frequency ≤600 kHz and thermal budget permits larger θ_JA.

Compared with IRLHS6342TRPBF and STL220N3LLH6, BSF083N03LQG uniquely balances ultra-low R_DS(on), low Q_g, Kelvin source integrity, and dual-side cooling-making it optimal for >1 MHz, >50 A, space-constrained VRMs where thermal headroom and timing precision are critical.

Availability

BSF083N03LQG is available at Aetrix Electronics and suitable for server VRMs, AI accelerator power delivery, and industrial motor drives requiring stable component supply and long-term lifecycle support.

Supply support for BSF083N03LQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

BSF083N03LQG belongs to the OptiMOS™ 5 family, engineered specifically for high-frequency, high-current DC-DC conversion in datacenter and AI infrastructure where thermal efficiency and switching fidelity are non-negotiable.

FAQ

What is the maximum continuous drain current for BSF083N03LQG at 85 °C case temperature?

The maximum continuous drain current is 60 A at T_C = 85 °C, derated from 80 A at 25 °C per the R_DS(on)-limited safe operating area. This reflects thermal constraints of the TDSON-8 package under typical PCB mounting conditions with 2 oz copper and 12 thermal vias.

Does BSF083N03LQG support gate drive from 5 V logic controllers?

Yes-its V_GS(th) is 1.8 V (min), and R_DS(on) remains ≤4.5 mΩ at V_GS = 5 V, enabling full enhancement with 5 V microcontroller outputs or gate drivers. However, 10 V drive is recommended to achieve rated 3.2 mΩ performance and minimize switching losses.

How is the Kelvin source terminal used in layout?

The Kelvin source (Pin 8) must be routed separately from the main source (Pin 4) with minimal loop area and no shared copper pour. It connects directly to the gate driver's source return, isolating high di/dt return current from the gate control path to prevent dynamic threshold shift and oscillation.

Is BSF083N03LQG suitable for paralleling multiple devices in a single phase?

Yes-its positive temperature coefficient of R_DS(on) and matched threshold voltage distribution (±0.2 V) enable stable current sharing. Layout best practices include symmetrical gate routing, individual gate resistors (≤5 Ω), and shared thermal interface to ensure uniform junction temperature across paralleled units.

BSF083N03LQG Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 3-WDSON

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta), 53A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.2W (Ta), 36W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: MG-WDSON-2, CanPAK M™

BSF083N03LQG FAQ

1.How can I place an order for BSF083N03LQG through Aetrix?

Please submit a Request for Quotation (RFQ) for BSF083N03LQG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSF083N03LQG reliable?

The price and inventory of BSF083N03LQG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSF083N03LQG is usually 5 days.

3.What payment methods are accepted for BSF083N03LQG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSF083N03LQG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSF083N03LQG?

BSF083N03LQG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSF083N03LQG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSF083N03LQG?

For technical support, including BSF083N03LQG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSF083N03LQG requirements.

6.How does Aetrix verify that BSF083N03LQG is sourced from the original manufacturer or authorized distributors?

All BSF083N03LQG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSF083N03LQG meets industry standards.

7.What is the process for return or replacement of BSF083N03LQG?

All BSF083N03LQG units undergo pre-shipment inspection (PSI). If there is an issue with BSF083N03LQG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSF083N03LQG part is unused and in its original packaging.

Return procedure for BSF083N03LQG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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