Infineon Technologies BSL296SNH6327XTSA1

Overview

BSL296SNH6327XTSA1 from Infineon Technologies is an N-channel enhancement-mode logic-level MOSFET in TSOP-6 package, rated for 100 V V_DS, 1.4 A continuous drain current, and 460 mΩ R_DS(on) at V_GS = 10 V. It is AEC-Q101 qualified, avalanche-rated, and optimized for industrial power switching in compact DC-DC converters and load switches.

For engineers reviewing the BSL296SNH6327XTSA1 datasheet, BSL296SNH6327XTSA1 pinout, BSL296SNH6327XTSA1 application, or BSL296SNH6327XTSA1 equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, 15 mJ single-pulse avalanche energy, 2.7–4.0 nC total gate charge, and TSOP-6 thermal resistance of 62.5 K/W with 6 cm² copper area.

Technical Context

This OptiMOS™ small-signal transistor uses trench-based silicon technology to achieve low R_DS(on) with fast switching: t_r = 3.0–4.5 ns, t_f = 4.5–8.1 ns, and Q_gd = 1.47–2.2 nC. Its gate threshold voltage (0.8–1.8 V) ensures reliable turn-on at 4.5 V logic levels while maintaining robustness against spurious conduction.

The integrated body diode supports synchronous rectification and flyback recovery, with t_rr = 20–30 ns and Q_rr = 37–55 nC at I_F = 1.4 A. Thermal design is enabled by R_thJA = 62.5 K/W (6 cm² PCB copper) and R_thJS = 50 K/W to soldering point.

Key Specifications

Pinout & Package

BSL296SNH6327XTSA1 is housed in a lead-free, halogen-free PG-TSOP6 (TSOP-6) surface-mount package with exposed drain pad for thermal performance. Pin numbering follows standard TSOP-6 layout (viewed top-side, marking side up, pin 1 at top-left corner).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with DMN2053UVT-7 and IPB052N10N3, BSL296SNH6327XTSA1 uniquely balances AEC-Q101 compliance, true 4.5 V logic-level operation, and TSOP-6 footprint-making it optimal for space-constrained, automotive-qualified, low-to-medium current switching where gate drive simplicity and reliability are critical.

Availability

BSL296SNH6327XTSA1 is available at Aetrix Electronics and suitable for industrial DC-DC converters, automotive body control modules, and smart LED lighting systems requiring stable component supply and long-term lifecycle support.

Supply support for BSL296SNH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap technologies.

The OptiMOS™ small-signal transistor product line targets high-efficiency, logic-level-driven power switching in space-constrained industrial and automotive applications-emphasizing low R_DS(on), fast switching, and qualification-grade reliability.

FAQ

What is the maximum junction temperature and how does it affect safe operating area?

The BSL296SNH6327XTSA1 has a maximum junction temperature of 150 °C. At this limit, its continuous drain current derates to 1.1 A at T_A = 70 °C, and its SOA curve restricts simultaneous V_DS and I_D to avoid secondary breakdown. The device's R_thJA = 62.5 K/W (with 6 cm² copper) defines thermal limits in real-world PCB layouts.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes-the integrated body diode has t_rr = 20–30 ns and Q_rr = 37–55 nC at I_F = 1.4 A, making it suitable for synchronous rectification in 500 kHz–1 MHz DC-DC converters. Its soft recovery characteristic minimizes voltage overshoot and EMI during commutation.

Does the TSOP-6 package require special PCB layout considerations?

Yes-the exposed drain pad must be connected to a minimum 6 cm² copper area on the PCB for thermal performance. Vias under the pad (≥4 × 0.3 mm diameter) are recommended to enhance heat transfer to inner layers. Signal traces to Gate (Pins 1 & 6) should be symmetrical and short to minimize loop inductance and ringing.

How does the device behave under repetitive avalanche conditions?

The BSL296SNH6327XTSA1 is rated for single-pulse avalanche energy (E_AS = 15 mJ), but repetitive avalanche is not characterized or guaranteed. For circuits subject to repeated inductive switching (e.g., motor drives), external clamping or snubbing is required to prevent cumulative junction heating and potential failure.