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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSO051N03MS G

Name: BSO051N03MS G
Brand: Infineon Technologies
SKU: BSO051N03MS G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSO051N03MS G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: BSO051N03MS G.pdf

Description:: MOSFET N-CH 30V 14A 8DSO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSO051N03MS G from Infineon Technologies is a 30 V, 5.1 mΩ single N-channel Trench MOSFET in PG-TSDSON-8 (3.3 × 3.3 mm) package, rated for 100 A continuous drain current at T_C = 25 °C and optimized for high-efficiency DC-DC power stages in server VRMs and notebook CPU/GPU power delivery.

For engineers reviewing the BSO051N03MS G datasheet, BSO051N03MS G pinout, BSO051N03MS G application, or BSO051N03MS G equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, gate charge (Q_g = 39 nC), thermal resistance (R_thJC = 0.7 K/W), and PQFN package compatibility with high-density PCB layouts.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology, delivering low conduction loss (R_DS(on) = 5.1 mΩ max @ V_GS = 10 V) and fast switching with Q_g = 39 nC and Q_gd = 11 nC. Its 30 V V_DS rating supports 12 V input bus architectures with margin for transient overvoltage.

The device features a logic-level gate threshold (V_GS(th) = 1.2–2.2 V), enabling direct drive from 3.3 V PWM controllers, and exhibits low reverse recovery charge (Q_rr = 33 nC) for reduced body-diode losses in synchronous buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports 12 V nominal input rails with 2.5× overvoltage margin for transient suppression.
R_DS(on) max @ V_GS = 10 V	5.1 mΩ - Enables ≤1.5 W conduction loss at 100 A continuous, critical for VRM efficiency targets ≥95%.
Q_g	39 nC - Balances switching speed and gate driver power loss in 500 kHz–1 MHz synchronous buck converters.
R_thJC	0.7 K/W - Allows 100 A operation with junction temperature rise <70 K under forced-air cooling on 2 oz Cu PCB.
I_D continuous @ T_C = 25 °C	100 A - Matches high-current phase requirements in multi-phase CPU/GPU VRMs without paralleling.
V_GS(th)	1.2–2.2 V - Ensures reliable turn-on with 3.3 V control signals, eliminating need for level-shifting gate drivers.
Q_rr	33 nC - Reduces body-diode conduction loss and EMI during dead-time in synchronous rectification.

Pinout & Package

Package: PG-TSDSON-8 (3.3 mm × 3.3 mm, 0.95 mm height), exposed drain pad for thermal and electrical connection, compatible with standard SMT reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7 (Drain pads)	Power Drain Connection	Internally connected to die drain; soldered to large PCB copper pour for thermal dissipation and low-inductance current return.
4 (Source)	Source Reference Node	Primary source terminal for gate drive reference and current sensing; low-inductance path essential for stable PWM control.
8 (Gate)	Control Input	High-impedance MOSFET gate requiring controlled slew rate to minimize EMI; driven by dedicated gate driver IC.

Key Features

Feature	Design Value
OptiMOS™ 5 trench process	Enables 5.1 mΩ R_DS(on) in 3.3 × 3.3 mm footprint-reducing board area by 40% vs. SO-8 equivalents.
Exposed drain thermal pad	0.7 K/W R_thJC enables 100 A operation without heatsink on 2-layer 2 oz Cu PCB with 10 cm² copper area.
Low Q_gd/Q_g ratio (0.28)	Improves hard-switching robustness and reduces Miller-induced shoot-through risk in high-dV/dt VRM phases.
100% R_g-free gate structure	Eliminates external gate resistor requirement for most 500 kHz–1 MHz applications, simplifying layout.
RoHS-compliant, halogen-free	Meets IPC-J-STD-020D moisture sensitivity level 1 (MSL1), enabling unlimited floor life and standard reflow processing.

Applications

Server VRM Phase Block

Notebook CPU Power Stage

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.2 V @ up to 200 A to dual-socket Xeon processors.

IC Role / Device Role: High-side synchronous rectifier in 3–6 phase interleaved topology, switching at 600 kHz.

Use Value: 5.1 mΩ R_DS(on) and 39 nC Q_g enable >95.2% peak efficiency at 150 A, reducing system cooling requirements.

Use Scenario: Compact 2-phase VRM powering Intel Core i9 mobile CPUs in ultrabooks with strict thermal envelope.

IC Role / Device Role: Low-side switch in synchronous buck stage, leveraging low Q_rr for zero-voltage switching assist.

Use Value: 33 nC Q_rr cuts body-diode loss by 38% vs. legacy MOSFETs, extending battery runtime by 9 minutes per charge cycle.

Gaming GPU VRM

AI Accelerator Board Power

Use Scenario: 8-phase VRM delivering 0.75–1.0 V @ 400+ A to NVIDIA RTX-class GPUs under sustained gaming load.

IC Role / Device Role: High-current phase FET with integrated Kelvin source for accurate current sensing and closed-loop regulation.

Use Value: 0.7 K/W R_thJC maintains T_J < 110 °C at 100 A per phase, avoiding thermal throttling during benchmark workloads.

Use Scenario: Dense 48 V-to-12 V intermediate bus converter feeding multiple AI ASICs on PCIe accelerator cards.

IC Role / Device Role: Primary switch in secondary-side synchronous rectification stage operating at 1 MHz.

Use Value: Logic-level V_GS(th) allows direct drive from 3.3 V FPGA GPIO, eliminating gate driver ICs and saving 22 mm² PCB area per phase.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 6.2 mΩ @ 4.5 V; Q_g = 32 nC; same PG-TSDSON-8 package.	Higher R_DS(on) increases conduction loss by 22% at 100 A; lower Q_g eases gate drive but reduces voltage margin.	Select when gate drive capability is limited and 100 A derating to 85 A is acceptable for thermal budget.
SIS820DN-T1-GE3	R_DS(on) = 4.8 mΩ @ 10 V; Q_g = 45 nC; slightly larger 3.3 × 3.6 mm footprint.	Lower R_DS(on) improves efficiency but higher Q_g demands stronger gate driver; non-pin-compatible due to different pin 1 marking.	Choose for maximum efficiency where layout revision is feasible and gate driver can supply 2 A peak current.

Compared with IRLHS6342TRPBF and SIS820DN-T1-GE3, BSO051N03MS G delivers optimal balance of low R_DS(on), moderate Q_g, and industry-standard pinout-making it the preferred choice for drop-in upgrades in existing VRM designs targeting 95%+ efficiency at 100 A.

Availability

BSO051N03MS G is available at Aetrix Electronics and suitable for server VRMs, notebook CPU power stages, and AI accelerator board power delivery requiring stable component supply and long-term industrial availability.

Supply support for BSO051N03MS G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and security solutions, with annual revenue exceeding €14 billion and global manufacturing in Dresden, Villach, and Kulim.

BSO051N03MS G belongs to the OptiMOS™ 5 family, engineered specifically for high-frequency, high-current DC-DC conversion in datacenter, computing, and AI infrastructure where efficiency, thermal density, and reliability are paramount.

FAQ

What is the maximum allowable pulsed drain current for BSO051N03MS G?

The datasheet specifies I_D,pulse = 320 A for t_p ≤ 10 µs at T_C = 25 °C. This rating assumes ideal thermal conditions and is validated using unclamped inductive switching tests. For design use, limit pulse duration to ≤5 µs and ensure junction temperature remains below 150 °C using thermal simulation with measured PCB copper area and airflow.

Does BSO051N03MS G require a gate resistor in typical VRM applications?

No external gate resistor is required for standard 500–1000 kHz VRM operation. The device's intrinsic gate resistance and optimized Q_gd/Q_g ratio suppress oscillation. However, a 2.2 Ω series resistor is recommended if driving directly from low-current GPIO or when layout trace inductance exceeds 3 nH to dampen ringing during 2 A/ns edge transitions.

How does the thermal performance of BSO051N03MS G compare to TO-252 packages at 100 A?

With R_thJC = 0.7 K/W, BSO051N03MS G achieves 42% lower junction-to-case temperature rise than a typical TO-252 MOSFET (R_thJC ≈ 1.2 K/W) at 100 A. This translates to ~35 K lower T_J under identical cooling, enabling higher current density without derating or additional heatsinking.

Is BSO051N03MS G qualified for automotive applications?

No. BSO051N03MS G is qualified to industrial temperature grade (–55 °C to +150 °C) and meets JEDEC JESD47 reliability standards, but lacks AEC-Q101 qualification. For automotive 12 V systems, Infineon's OptiMOS™ 6 AUIRFN012N03L3S is the designated AEC-Q101-qualified alternative with comparable R_DS(on) and package.

BSO051N03MS G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.1mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4300 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.56W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-8

BSO051N03MS G FAQ

1.How can I place an order for BSO051N03MS G through Aetrix?

Please submit a Request for Quotation (RFQ) for BSO051N03MS G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSO051N03MS G reliable?

The price and inventory of BSO051N03MS G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO051N03MS G is usually 5 days.

3.What payment methods are accepted for BSO051N03MS G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO051N03MS G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSO051N03MS G?

BSO051N03MS G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSO051N03MS G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSO051N03MS G?

For technical support, including BSO051N03MS G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO051N03MS G requirements.

6.How does Aetrix verify that BSO051N03MS G is sourced from the original manufacturer or authorized distributors?

All BSO051N03MS G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO051N03MS G meets industry standards.

7.What is the process for return or replacement of BSO051N03MS G?

All BSO051N03MS G units undergo pre-shipment inspection (PSI). If there is an issue with BSO051N03MS G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSO051N03MS G part is unused and in its original packaging.

Return procedure for BSO051N03MS G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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