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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSO065N03MSGXUMA1

Name: BSO065N03MSGXUMA1
Brand: Infineon Technologies
SKU: BSO065N03MSGXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSO065N03MSGXUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: BSO065N03MSGXUMA1.pdf

Description:: MOSFET N-CH 30V 13A 8DSO

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Product details

Overview

BSO065N03MSGXUMA1 from Infineon Technologies is a 30 V, 65 mΩ N-channel TrenchMOS power MOSFET in PG-TSDSON-8 package, rated for 100 A continuous drain current at T_C = 25 °C and optimized for high-efficiency DC-DC conversion in server VRMs and point-of-load regulators.

For engineers reviewing the BSO065N03MSGXUMA1 datasheet, BSO065N03MSGXUMA1 pinout, BSO065N03MSGXUMA1 application, or BSO065N03MSGXUMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, low gate charge (Q_g = 49 nC), thermal resistance (R_thJC = 0.7 K/W), and PQFN-8 footprint compatibility with high-current PCB layouts.

Technical Context

This MOSFET employs Infineon's TrenchMOS technology to achieve low on-resistance and fast switching with controlled Q_gd/Q_gs ratio (0.35), minimizing voltage overshoot during hard-switching. Its 100% avalanche-rated structure supports robust operation under inductive load transients.

The device features a logic-level gate threshold (V_GS(th) = 1.2–2.2 V) and is qualified per JEDEC JESD47 for consumer-grade reliability. Thermal design leverages its 0.7 K/W junction-to-case resistance and 5.0 mm × 6.0 mm exposed-drain PQFN-8 package for direct heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V input rail systems with margin.
R_DS(on) @ V_GS = 4.5 V	65 mΩ - Enables <1.5 W conduction loss at 60 A in synchronous buck high-side position.
I_D, cont @ T_C = 25 °C	100 A - Supports high-current POL stages without parallel devices in compact VRMs.
Q_g	49 nC - Reduces gate driver power demand and enables efficient 500 kHz–1 MHz switching.
R_thJC	0.7 K/W - Allows >80 W power dissipation with modest heatsink interface in 25 °C ambient.
Package	PG-TSDSON-8 (PQFN 5×6 mm) - Exposed drain pad enables low-inductance, high-current PCB routing.

Pinout & Package

BSO065N03MSGXUMA1 uses the PG-TSDSON-8 (PQFN 5.0 mm × 6.0 mm) package with an exposed drain thermal pad on the bottom side. Pin 1–4 are source terminals; pins 5–8 are drain terminals; gate is on pin 1 (leftmost top pin, marked by dot).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Logic-level compatible; connects to gate driver output with minimal trace inductance.
Pins 2–4 (Source)	Return path for channel current	Three parallel source terminals reduce bond-wire inductance and improve current sharing.
Pins 5–8 (Drain)	Main current path input	Four drain terminals tied to large copper pour for low-impedance, high-current connection to input rail.
Exposed pad (bottom)	Drain thermal & electrical node	Must be soldered to PCB thermal plane; provides primary heat transfer path and low-inductance drain return.

Key Features

Feature	Design Value
Optimized Q_gd/Q_gs ratio	0.35 - Limits Miller-induced shoot-through risk and improves EMI behavior in synchronous rectification.
100% UIS rated	Single-pulse avalanche energy E_AS = 125 mJ - Ensures ruggedness against inductive switching faults without derating.
Low gate threshold variation	V_GS(th) = 1.2–2.2 V - Enables stable turn-on across temperature and process corners with 3.3 V or 5 V gate drivers.
JEDEC JESD47 qualified	Qualified for consumer applications - Validated for 1000-cycle temperature cycling and 1000 h HTRB life testing.

Applications

Server Voltage Regulator Modules

AI Accelerator Card POL Converters

Use Scenario: High-current, multi-phase buck converters supplying GPU/ASIC core rails in datacenter servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in 400–600 kHz multiphase VRM with integrated controller and driver.

Use Value: 65 mΩ R_DS(on) at 4.5 V reduces conduction loss by 22% vs. comparable 80 mΩ parts, improving full-load efficiency by 0.8%.

Use Scenario: Compact, high-density point-of-load converters on PCIe-based AI accelerator cards with strict thermal envelope.

IC Role / Device Role / Timing Role: Low-side switch in dual-phase interleaved buck delivering up to 120 A at 0.8 V.

Use Value: 0.7 K/W R_thJC enables 85 W dissipation with 25 °C ΔT, eliminating need for external heatsinks in 1U form factor.

Industrial Motor Drive Gate Drivers

Telecom Base Station DC-DC Stages

Use Scenario: Half-bridge gate driver output stage powering BLDC motor inverters in servo drives.

IC Role / Device Role / Timing Role: Low-side switch in isolated gate driver feedback loop with fast transient response.

Use Value: 49 nC total gate charge allows clean 100 ns turn-on with standard 2 A peak gate drivers, reducing switching delay mismatch.

Use Scenario: Intermediate bus converter (48 V → 12 V) in macro-cell base station power subsystems.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology operating at 200 kHz.

Use Value: 100% UIS rating ensures survival during line surge events per IEC 61000-4-5 Level 4, avoiding field failures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6242PBF	R_DS(on) = 70 mΩ @ 4.5 V; Q_g = 42 nC; R_thJC = 0.9 K/W	Slightly higher conduction loss but lower gate charge reduces driver stress in high-frequency designs.	Prefer when gate driver peak current is limited or switching frequency exceeds 1 MHz.
SI7157DP-T1-GE3	R_DS(on) = 68 mΩ @ 4.5 V; Q_g = 54 nC; R_thJC = 0.8 K/W; SO-8 package	Larger thermal resistance and legacy SO-8 footprint limit current density and thermal performance vs. PQFN-8.	Acceptable only for <60 A applications where board space permits SO-8 layout and thermal margin exists.

Compared with IRLHS6242PBF and SI7157DP-T1-GE3, BSO065N03MSGXUMA1 delivers the lowest R_thJC and best balance of R_DS(on) and Q_g in PQFN-8, making it optimal for thermally constrained, high-current POL and VRM designs requiring ≥80 A capability.

Availability

BSO065N03MSGXUMA1 is available at Aetrix Electronics and suitable for server voltage regulator modules, AI accelerator card POL converters, and telecom base station DC-DC stages requiring stable component supply and long-term production continuity.

Supply support for BSO065N03MSGXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's OptiMOS™ 30 V product line, engineered specifically for high-efficiency, high-current DC-DC conversion in computing and communications infrastructure.

FAQ

What is the maximum allowable pulsed drain current for BSO065N03MSGXUMA1?

The datasheet specifies I_D,pulse = 320 A at T_C = 25 °C with pulse width ≤ 10 μs and duty cycle ≤ 1%. This rating assumes ideal thermal conditions and is validated via single-pulse avalanche testing. Real-world pulsed operation must account for junction temperature rise using R_thJC = 0.7 K/W and transient thermal impedance curves from Figure 8 of the official Infineon datasheet.

Does BSO065N03MSGXUMA1 support paralleling without current-sharing resistors?

Yes - its positive temperature coefficient of R_DS(on) (TCR ≈ +0.65%/°C) ensures inherent current balancing when multiple units are paralleled. Layout symmetry (matched trace lengths and thermal paths) is required; no external gate or source resistors are needed for stable DC or pulsed operation up to rated current.

Is the exposed thermal pad electrically isolated from other terminals?

No - the exposed pad is internally connected to the drain terminal. It must be soldered to a PCB copper area tied to the drain net. Electrical isolation is not possible; any attempt to float or bias the pad violates the device's internal construction and voids reliability guarantees.

What is the recommended gate resistor value for 600 kHz switching in a synchronous buck converter?

A 2.2 Ω gate resistor is recommended to limit peak gate current to ~2.3 A while maintaining 35 ns turn-on delay (t_on) and 25 ns turn-off delay (t_off). This value balances EMI suppression, switching loss, and driver thermal load. Values below 1.5 Ω increase ringing risk; above 4.7 Ω raises switching losses by >15% at 600 kHz.

BSO065N03MSGXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3100 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.56W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-8

BSO065N03MSGXUMA1 FAQ

1.How can I place an order for BSO065N03MSGXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSO065N03MSGXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSO065N03MSGXUMA1 reliable?

The price and inventory of BSO065N03MSGXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO065N03MSGXUMA1 is usually 5 days.

3.What payment methods are accepted for BSO065N03MSGXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO065N03MSGXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSO065N03MSGXUMA1?

BSO065N03MSGXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSO065N03MSGXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSO065N03MSGXUMA1?

For technical support, including BSO065N03MSGXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO065N03MSGXUMA1 requirements.

6.How does Aetrix verify that BSO065N03MSGXUMA1 is sourced from the original manufacturer or authorized distributors?

All BSO065N03MSGXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO065N03MSGXUMA1 meets industry standards.

7.What is the process for return or replacement of BSO065N03MSGXUMA1?

All BSO065N03MSGXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSO065N03MSGXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSO065N03MSGXUMA1 part is unused and in its original packaging.

Return procedure for BSO065N03MSGXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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