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Infineon Technologies BSO203SP

Part No.:
BSO203SP
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixBSO203SP.pdf
Description:
P-CHANNEL POWER MOSFET
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,701

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Product details

Overview

BSO203SP from Infineon Technologies is a P-channel enhancement-mode MOSFET optimized for low-voltage logic-level switching, featuring RDS(on) = 21 mΩ at VGS = −4.5 V, −9 A continuous drain current, and −20 V VDS rating, deployed in high-efficiency load switches and battery protection circuits.

For engineers reviewing the BSO203SP datasheet, BSO203SP pinout, BSO203SP application, or BSO203SP equivalent, key selection criteria include its Super Logic Level gate drive (2.5 V rated), avalanche ruggedness (97 mJ EAS), dv/dt immunity (−6 kV/µs), and operation up to 150°C junction temperature.

Technical Context

This device implements a trench-based OptiMOS™-P structure enabling low on-resistance with fast switching dynamics: tr = 27–40 ns and tf = 69–104 ns under standard test conditions (VDD = −10 V, ID = −1 A, RG = 6 Ω). Its gate threshold voltage (VGS(th) = −0.6 to −1.2 V) ensures reliable turn-on with low-voltage controllers.

The integrated body diode supports reverse-current handling with VSD = −0.82 to −1.25 V at |IF| = |ID| and exhibits trr = 34–42 ns and Qrr = 16.7–21 nC, making it suitable for synchronous rectification and bidirectional power path control.

Key Specifications

ParameterValue and Actual Design Meaning
VDS−20 V - Maximum blocking voltage for low-voltage DC systems (e.g., 12 V automotive, USB PD, portable battery packs)
RDS(on) @ VGS = −4.5 V12.9–21 mΩ - Enables <150 mW conduction loss at −9 A, critical for thermally constrained PCB layouts
ID (TA = 25°C)−9 A - Continuous drain current rating with standard SMD footprint (40 mm × 40 mm FR4, 6 cm² copper)
EAS97 mJ - Single-pulse avalanche energy at ID = −9 A, VDD = −10 V, RGS = 25 Ω - Supports inductive load switching without external snubbers
dv/dt Rating−6 kV/µs - Immunity to parasitic turn-on in high-noise motor control or relay driving applications
Tj Range−55°C to +150°C - Validated operation across industrial and automotive ambient environments
Ciss2265 pF - Input capacitance at VGS = 0, VDS = −15 V, f = 1 MHz - Determines gate drive strength requirements

Pinout & Package

BSO203SP uses the P-SO-8 (Power-SO8) surface-mount package: 8-pin, exposed drain pad on bottom, lead pitch 1.27 mm, JEDEC MS-012AC compliant. Thermal resistance RthJS = 35 K/W (junction-to-soldering point).

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain pins)Drain (D)All eight pins connect internally to the drain terminal and exposed thermal pad - provides low-inductance, high-current path and primary heat dissipation route
Source (pins not labeled separately)Source (S)Source terminals are pins 1–8's internal connection points opposite drain; electrically isolated from drain except via channel - forms controlled current path with gate
Gate (G)Gate (G)Single gate input (pin 4 per top view diagram) - accepts logic-level signals down to −2.5 V for full enhancement; requires no level-shifting in 3.3 V systems

Key Features

FeatureDesign Value
Super Logic Level GateRated for full enhancement at VGS = −2.5 V - eliminates need for gate drivers in microcontroller-based load switching
Avalanche-Rated Operation97 mJ single-pulse EAS - enables robust switching into inductive loads without external clamping components
High dv/dt Immunity−6 kV/µs rating - prevents false triggering in noisy environments such as motor drives or relay interfaces
150°C Junction TemperatureRated Tj(max) = +150°C - supports operation in sealed enclosures or high-ambient industrial settings without derating
Low-Qg / Qgd RatioQg = 33.6–50.4 nC, Qgd/Qg ≈ 46% - improves switching efficiency and reduces Miller-induced oscillation risk

Applications

Battery Protection CircuitUSB Type-C Power Delivery Switch

Use Scenario: Reverse-current blocking and overcurrent shutdown in dual-battery backup systems.

IC Role / Device Role / Timing Role: P-channel MOSFET used as high-side load switch with integrated overtemperature and short-circuit detection feedback.

Use Value: RDS(on) ≤ 21 mΩ minimizes voltage drop across battery path; avalanche rating absorbs inductive kickback during fault interruption.

Use Scenario: VCONN and VBUS power path control in USB-C receptacles supporting 20 V / 5 A profiles.

IC Role / Device Role / Timing Role: Bidirectional power switch managing source/sink directionality with fast turn-off (<104 ns fall time) to meet USB PD timing compliance.

Use Value: Low Ciss (2265 pF) and gate plateau voltage (−1.6 V) enable clean edge control using standard 3.3 V GPIOs without overshoot.

Industrial PLC Digital Output ModuleAutomotive Body Control Module (BCM)

Use Scenario: Driving 24 V solenoids and indicator LEDs in programmable logic controller output stages.

IC Role / Device Role / Timing Role: High-side switch with integrated reverse diode for inductive flyback recirculation.

Use Value: VSD = −0.82 to −1.25 V and trr = 34–42 ns reduce diode losses and EMI during turn-off transitions.

Use Scenario: Controlling door lock actuators, mirror heaters, and interior lighting in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: Load switch with built-in thermal shutdown and short-circuit protection interface to CAN/LIN microcontrollers.

Use Value: 150°C Tj(max) and −6 kV/µs dv/dt rating ensure reliability in engine-bay-adjacent locations subject to thermal cycling and electrical noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF7420PbFRDS(on) = 28 mΩ @ VGS = −4.5 V; lower EAS (60 mJ); TO-252 packageHigher thermal resistance (RthJA ≈ 62 K/W vs. 53 K/W) limits power density in compact SMT designsPrefer BSO203SP where board space and thermal performance are constrained; IRF7420 suits through-hole legacy upgrades
SI2301DS-T1-BE3RDS(on) = 115 mΩ @ VGS = −2.5 V; SOT-23 package; ID = −2.7 ALower current capability and higher on-resistance increase conduction loss by >5× at 5 AChoose BSO203SP for ≥5 A loads requiring logic-level drive; SI2301 fits ultra-low-power signal-switching only

Compared with IRF7420PbF and SI2301DS-T1-BE3, BSO203SP delivers superior power density (−9 A in P-SO8), lower RDS(on), higher avalanche robustness, and better thermal performance-making it optimal for space-constrained, high-reliability 12–20 V load switching.

Availability

BSO203SP is available at Aetrix Electronics and suitable for battery protection circuits, USB Type-C power delivery switches, and industrial PLC digital output modules requiring stable component supply and long-term production continuity.

Supply support for BSO203SP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and security ICs, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

The OptiMOS™-P product line targets high-efficiency, logic-level-compatible P-channel MOSFETs for battery-powered and low-voltage industrial systems where compact size, thermal resilience, and rugged switching are essential.

FAQ

What is the maximum gate-source voltage rating for BSO203SP?

The absolute maximum gate-source voltage (VGS) is ±12 V. Exceeding this rating risks permanent gate oxide damage. Recommended operating range is −2.5 V to −4.5 V for full enhancement with logic-level drivers; biasing beyond −12 V-even briefly-may cause irreversible failure.

Can BSO203SP be used in parallel configurations?

Yes, but with strict layout symmetry: matched gate resistors (≤1 Ω), identical trace lengths, and shared thermal mass. The negative temperature coefficient of RDS(on) supports current sharing, but mismatched parasitics can cause imbalance. Derate total current by 15% versus single-device rating.

Does BSO203SP require a gate resistor for ESD protection?

A series gate resistor (10–100 Ω) is recommended to dampen ringing and limit peak gate current during fast switching, though not strictly required for ESD survival. The device meets HBM Class 2 (≥2 kV), but external RC filtering improves system-level robustness in noisy environments.

Is the body diode in BSO203SP suitable for reverse recovery in synchronous rectification?

Yes-the body diode has trr = 34–42 ns and Qrr = 16.7–21 nC at diF/dt = 100 A/µs, enabling use in medium-frequency (<500 kHz) synchronous buck converters. However, dedicated Schottky or GaN co-packaged solutions offer lower VSD and faster recovery for high-efficiency designs.

BSO203SP Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Bulk
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
21mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id:
1.2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:
39 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
3750 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1.6W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-DSO-8

BSO203SP FAQ

1.How can I place an order for BSO203SP through Aetrix?

Please submit a Request for Quotation (RFQ) for BSO203SP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSO203SP reliable?

The price and inventory of BSO203SP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSO203SP is usually 5 days.

3.What payment methods are accepted for BSO203SP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSO203SP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSO203SP?

BSO203SP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSO203SP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSO203SP?

For technical support, including BSO203SP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSO203SP requirements.

6.How does Aetrix verify that BSO203SP is sourced from the original manufacturer or authorized distributors?

All BSO203SP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSO203SP meets industry standards.

7.What is the process for return or replacement of BSO203SP?

All BSO203SP units undergo pre-shipment inspection (PSI). If there is an issue with BSO203SP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSO203SP part is unused and in its original packaging.

Return procedure for BSO203SP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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