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Infineon Technologies BSP321PL6327

Part No.:
BSP321PL6327
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixBSP321PL6327.pdf
Description:
P-CHANNEL MOSFET
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:37,989

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Product details

Overview

BSP321PL6327 from Infineon Technologies is a P-channel enhancement-mode SIPMOS® small-signal MOSFET rated for -100 V VDS, 900 mΩ RDS(on) at -10 V VGS and -0.98 A ID, avalanche-rated, AEC-Q101 qualified, and housed in PG-SOT-223 package. It serves as a robust low-side load switch in automotive body electronics and industrial power control circuits requiring high reliability under repetitive surge conditions.

For engineers reviewing the BSP321PL6327 datasheet, BSP321PL6327 pinout, BSP321PL6327 application, or BSP321PL6327 equivalent, key selection criteria include its -100 V breakdown rating, 900 mΩ on-resistance at -10 V gate drive, -0.98 A continuous drain current, avalanche energy rating (EAS = 57 mJ), and AEC-Q101 qualification for automotive-grade deployment.

Technical Context

This device operates in enhancement mode with a gate threshold voltage range of -2.1 V to -4.0 V, enabling direct interface with standard 3.3 V/5 V logic when used with appropriate level-shifting or pull-up configuration. Its integrated body diode supports freewheeling in inductive loads, with VSD = 0.84–1.2 V at IF = 0.98 A and trr = 47 ns.

The MOSFET exhibits Ciss = 240–319 pF, Coss = 62–82 pF, and Qg = 9–12 nC, supporting fast switching in DC-DC converters and LED drivers. Thermal resistance RthJA is 115 K/W (min footprint) or 70 K/W (6 cm² copper), confirming suitability for thermally constrained PCB layouts.

Key Specifications

ParameterValue and Actual Design Meaning
VDS-100 V - Withstands reverse-biased drain-source transients up to 100 V without breakdown.
RDS(on) max900 mΩ at VGS = -10 V, ID = -0.98 A - Ensures <1 V conduction loss at rated current, minimizing heat generation.
ID cont-0.98 A at TC = 25 °C - Supports stable operation in low-power switching nodes such as sensor biasing or solenoid control.
EAS57 mJ - Absorbs single-pulse inductive energy without failure, critical for relay or motor coil snubbing.
VGS(th)-2.1 to -4.0 V - Enables reliable turn-on with 5 V microcontroller GPIO or dedicated gate drivers.
Qg9–12 nC - Determines gate drive power requirement and switching speed in PWM applications.
tr/tf4.4–6.6 ns / 8.5–12.7 ns - Supports >10 MHz switching in compact power stages with minimal overlap loss.

Pinout & Package

Package: PG-SOT-223 - Surface-mount plastic package with exposed drain pad for thermal dissipation; compatible with standard SMT reflow profiles and IPC-7351B land pattern.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminalReference node for gate drive; connects to system ground or low-side return path.
Pin 2 (Gate)Control inputReceives negative gate voltage relative to source to enable conduction; requires ESD protection.
Pin 3 (Drain)Power outputHigh-side connection point for load; electrically tied to exposed metal tab for thermal conduction.
Tab (Drain)Thermal & electrical drainProvides primary thermal path to PCB copper; must be soldered to ≥6 cm² copper area for rated power dissipation.

Key Features

FeatureDesign Value
Avalanche-rated operationGuarantees single-pulse ruggedness up to 57 mJ, eliminating need for external clamping in inductive switching.
AEC-Q101 qualificationValidated for automotive temperature range (-55 °C to +150 °C) and mechanical stress, enabling use in body control modules.
Pb-free & RoHS-compliant platingMeets global environmental compliance requirements without sacrificing solderability or long-term intermetallic stability.
Low gate charge (Qg = 9–12 nC)Reduces driver power consumption and enables efficient operation with low-current gate drivers or microcontroller outputs.
Integrated body diodeSupports bidirectional current flow during flyback events; trr = 47 ns ensures minimal switching loss in freewheeling paths.

Applications

Automotive Door ModuleIndustrial Sensor Power Switch

Use Scenario: Controlling window lift motors and mirror actuators in centralized door ECUs.

IC Role / Device Role / Timing Role: Low-side switch managing 12 V battery-fed inductive loads with transient suppression.

Use Value: Avalanche rating absorbs back-EMF spikes during motor commutation, eliminating discrete TVS components.

Use Scenario: Enabling/disabling 24 V analog sensors in PLC I/O modules.

IC Role / Device Role / Timing Role: Precision-controlled power gate with fast turn-off (<25 ns delay) to prevent sensor bias leakage.

Use Value: RDS(on) stability over temperature ensures consistent sensor excitation voltage across -40 °C to +85 °C.

LED Tail Light DriverUSB-C Port Protection

Use Scenario: Driving high-brightness brake/tail LEDs in automotive rear lighting clusters.

IC Role / Device Role / Timing Role: Constant-current sink switch modulated via PWM at 1–2 kHz.

Use Value: Low Qg and fast tf minimize switching losses, enabling >95% efficiency at 300 mA per channel.

Use Scenario: Reverse-polarity and overcurrent protection for USB-C power delivery paths.

IC Role / Device Role / Timing Role: Back-to-back P-channel switch isolating VBUS from downstream circuitry.

Use Value: -100 V VDS rating withstands hot-plug transients up to ±80 V, meeting USB PD 3.1 specification margins.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMG2305UVT-7RDS(on) = 48 mΩ @ -4.5 V (lower), VDS = -20 V (lower), SOT-23 package (smaller, lower thermal mass)Not suitable for >20 V systems; limited to portable electronics and low-voltage logic-level switching.Select only if operating voltage ≤20 V and board space is constrained.
IPD250N10N3GRDS(on) = 2.5 mΩ @ -10 V (much lower), TO-252 package (higher thermal capacity), VDS = -100 V (same)Designed for high-current (>20 A) motor drives; overqualified for sub-1 A signal switching.Choose only when thermal budget exceeds 1 W and PCB layout allows DPAK footprint.

Compared with DMG2305UVT-7 and IPD250N10N3G, BSP321PL6327 uniquely balances -100 V capability, AEC-Q101 qualification, and SOT-223 thermal performance for cost-sensitive automotive and industrial 12–24 V load switching where both ruggedness and moderate current handling are required.

Availability

BSP321PL6327 is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, LED lighting control, and USB-C port protection requiring stable component supply and long-term lifecycle support.

Supply support for BSP321PL6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap technologies.

The BSP321P belongs to Infineon's SIPMOS® small-signal MOSFET product line, engineered for high-reliability, low-voltage switching in automotive and industrial environments where avalanche ruggedness and AEC-Q101 compliance are mandatory.

FAQ

Is BSP321PL6327 suitable for 24 V industrial control applications?

Yes. With a -100 V VDS rating and AEC-Q101 qualification, it supports 24 V nominal systems including surge margins up to ±80 V. Its RDS(on) remains stable across -40 °C to +125 °C junction temperature, ensuring predictable performance in PLC I/O modules and factory automation controllers.

What is the maximum safe gate-source voltage for BSP321PL6327?

The absolute maximum VGS is ±20 V per datasheet. Operation beyond ±15 V risks oxide degradation. For reliable long-term use, gate drive should be limited to -10 V for full enhancement and +5 V for guaranteed off-state, with series gate resistor (≥10 Ω) to limit dv/dt-induced ringing.

Does BSP321PL6327 require a heatsink in typical operation?

No external heatsink is required below 0.5 W power dissipation. At ID = -0.98 A and RDS(on) = 900 mΩ, conduction loss is ~0.96 W - manageable with ≥6 cm² PCB copper area per Infineon's thermal guidelines. Forced airflow or larger copper pours reduce junction temperature further.

Can BSP321PL6327 replace N-channel MOSFETs in high-side configurations?

No. As a P-channel device, it is inherently suited for low-side switching. High-side use requires gate voltage more positive than source - incompatible with its -100 V VDS rating and threshold behavior. For high-side 12 V/24 V switching, a dedicated high-side driver with N-channel MOSFET or integrated high-side switch is required.

BSP321PL6327 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
SIPMOS®
Package/Case:
TO-261-4, TO-261AA
Packaging:
Bulk
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
980mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
900mOhm @ 980mA, 10V
Vgs(th) (Max) @ Id:
4V @ 380µA
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
319 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.8W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT223-4-21

BSP321PL6327 FAQ

1.How can I place an order for BSP321PL6327 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSP321PL6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSP321PL6327 reliable?

The price and inventory of BSP321PL6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP321PL6327 is usually 5 days.

3.What payment methods are accepted for BSP321PL6327?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP321PL6327 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSP321PL6327?

BSP321PL6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSP321PL6327 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSP321PL6327?

For technical support, including BSP321PL6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP321PL6327 requirements.

6.How does Aetrix verify that BSP321PL6327 is sourced from the original manufacturer or authorized distributors?

All BSP321PL6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP321PL6327 meets industry standards.

7.What is the process for return or replacement of BSP321PL6327?

All BSP321PL6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSP321PL6327, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSP321PL6327 part is unused and in its original packaging.

Return procedure for BSP321PL6327:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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