Infineon Technologies BSP88E6327
- Part No.:
- BSP88E6327
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
BSP88E6327.pdf
- Description:
- MOSFET N-CH 240V 350MA SOT223-4
- Quantity:
- Payment:

- Shipping:

Inventory:5,809
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Product details
Overview
BSP88E6327 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS small-signal transistor in SOT-223 package, rated for 240 V VDS, 0.32 A continuous drain current, and 8 Ω RDS(on) at VGS = 4.5 V. It serves as a low-power switching element in high-voltage auxiliary power supplies, LED driver bias circuits, and industrial sensor interface protection stages.
For engineers reviewing the BSP88E6327 datasheet, BSP88E6327 pinout, BSP88E6327 application, or BSP88E6327 equivalent, key selection criteria include its 0.6–1.2 V gate threshold voltage, 1.7 W thermal dissipation capability at 25 °C, and integrated body diode with 1.05–1.3 V forward drop at 0.5 A - critical for flyback snubber and reverse polarity protection designs.
Technical Context
This device operates in enhancement mode with logic-compatible gate drive (VGS(th) ≤ 1.2 V), enabling direct interfacing with 3.3 V and 5 V microcontroller GPIOs without level-shifting. Its RDS(on) remains stable up to 150 °C junction temperature, supported by low thermal resistance (RthJA ≤ 72 K/W) on standard epoxy PCB layouts.
The integrated body diode exhibits 0.32 A continuous forward current rating and 1.28 A pulsed capability, with reverse recovery characteristics optimized for non-synchronous flyback and capacitive load switching. Dynamic parameters - including 5–8 ns turn-on delay and 25–35 ns fall time under 50 Ω gate drive - confirm suitability for sub-MHz switching applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 240 V - supports primary-side switching in offline AC/DC auxiliary supplies up to 170 V RMS input. |
| ID (continuous) | 0.32 A at TA = 25 °C - sufficient for biasing ICs, driving optocouplers, or controlling low-current relays. |
| RDS(on) | 8 Ω max at VGS = 4.5 V - ensures <1.3 mW conduction loss at 0.16 A, minimizing self-heating in thermally constrained layouts. |
| VGS(th) | 0.6–1.2 V - enables reliable turn-on with 3.3 V logic, eliminating need for external gate boosters in MCU-driven control paths. |
| Ptot | 1.7 W at TA = 25 °C - achievable with minimal copper area (6 cm² drain pad) on standard FR-4 PCBs. |
| VSD | 1.05–1.3 V at IF = 0.5 A - defines forward voltage drop of integrated body diode used for freewheeling or clamping. |
| Ciss | 80–110 pF - determines gate drive energy requirement and influences EMI behavior in edge-controlled switching. |
Pinout & Package
SOT-223 package with exposed drain tab for thermal and electrical connection; standardized 4-pin layout where Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain (dual-drain configuration).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Logic-level control input; requires no series resistor for 3.3 V/5 V MCU drive due to low Ciss and VGS(th). |
| Pin 2 | Drain | High-voltage switching node; electrically and thermally connected to exposed metal tab for PCB heat sinking. |
| Pin 3 | Source | Reference node for gate drive and current sensing; tied to ground or low-side return path in common-source topology. |
| Pin 4 | Drain | Second drain terminal - paralleled with Pin 2 to reduce package inductance and improve thermal spreading to PCB copper. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) down to 0.6 V enables direct interface with 3.3 V microcontrollers without gate driver ICs. |
| Integrated body diode | Rated for 0.32 A continuous forward current and 1.28 A pulsed, supporting freewheeling in inductive loads without external diode. |
| High VDS rating | 240 V breakdown supports operation across universal AC mains (85–265 VAC) in auxiliary supply topologies. |
| Thermally robust package | SOT-223 with dual-drain pins reduces RthJA to ≤72 K/W, allowing 1.7 W dissipation with minimal heatsinking. |
| ESD-hardened structure | HBM Class 1 rating (≥2 kV) ensures reliability during automated PCB assembly and handling in industrial environments. |
Applications
| Industrial Sensor Interface | LED Driver Bias Control |
|---|---|
Use Scenario: Isolating and protecting analog sensor outputs (e.g., RTD, thermistor) from transient overvoltage events in factory automation systems. IC Role / Device Role / Timing Role: Low-side switch providing galvanic isolation and fault current limiting via controlled RDS(on) and fast turn-off. Use Value: 240 V VDS withstand prevents latch-up during 24 V DC bus transients; 0.32 A rating matches typical sensor excitation current requirements. | Use Scenario: Enabling/disabling constant-current LED driver ICs in smart lighting modules based on ambient light or occupancy signals. IC Role / Device Role / Timing Role: High-voltage enable switch placed between input rail and driver IC VCC pin. Use Value: Logic-level VGS(th) allows direct 3.3 V MCU control; 1.7 W Ptot accommodates brief inrush during LED string startup. |
| Offline Auxiliary Power Supply | Reverse Polarity Protection |
Use Scenario: Primary-side switching in flyback-derived auxiliary supplies powering control circuitry in AC/DC adapters and SMPS controllers. IC Role / Device Role / Timing Role: Self-oscillating or PWM-controlled switch operating below 500 kHz with integrated body diode for demagnetization. Use Value: 240 V VDS and 8 Ω RDS(on) support >85% efficiency at 10–20 mA output; dual-drain SOT-223 aids thermal management. | Use Scenario: Protecting downstream DC/DC converters and microcontrollers from accidental reverse battery connection in portable industrial tools. IC Role / Device Role / Timing Role: Low-loss series pass element configured in source-follower topology with gate driven from regulated rail. Use Value: 0.6–1.2 V VGS(th) ensures rapid turn-on when polarity is correct; 1.3 V VSD limits forward drop and power loss during normal operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BSP78E6327 | Lower VDS (100 V), higher ID (0.5 A), lower RDS(on) (3.5 Ω), same SOT-223 package and logic-level gate. | Not suitable for >100 V applications; better for higher-current 24 V systems like motor drivers or solenoid control. | Select when system voltage is ≤100 V and lower conduction loss is prioritized over voltage headroom. |
| IPN70R1K4P7SAUMA1 | 700 V VDS, 1.4 kΩ RDS(on), TO-252 package, not logic-level (VGS(th) = 2–4 V). | Requires gate driver for 3.3 V logic; suited for high-voltage PFC or main-switch applications, not auxiliary bias rails. | Choose only if 240 V rating is insufficient and gate drive circuitry already exists for higher-threshold devices. |
Compared with BSP78E6327 and IPN70R1K4P7SAUMA1, the BSP88E6327 uniquely balances 240 V capability, logic-level compatibility, and SOT-223 thermal performance - making it optimal for space-constrained, high-voltage auxiliary switching where gate drive simplicity and voltage margin are critical.
Availability
BSP88E6327 is available at Aetrix Electronics and suitable for industrial sensor interfaces, LED driver bias control, and offline auxiliary power supplies requiring stable component supply and long-term manufacturability.
Supply support for BSP88E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The BSP88 belongs to Infineon's SIPMOS small-signal transistor family, designed specifically for high-voltage, low-current switching in auxiliary power, protection, and interface circuits where logic-level drive and thermal efficiency are essential.
FAQ
Is BSP88E6327 suitable for 24 V automotive applications?
No - while rated for 240 V, its maximum continuous drain current is only 0.32 A at 25 °C, and derating begins sharply above 60 °C ambient. Automotive 24 V loads (e.g., solenoids, fans) typically require ≥1 A sustained current and AEC-Q101 qualification, which this part lacks.
Can BSP88E6327 replace BS170 in existing designs?
Only with verification: BSP88E6327 has higher VDS (240 V vs. 60 V) and higher RDS(on) (8 Ω vs. ~5 Ω), but identical SOT-223 footprint and logic-level gate. It improves voltage margin but increases conduction loss - redesign of gate drive and thermal layout may be needed.
What is the maximum safe operating frequency for BSP88E6327?
Based on published dynamic parameters (td(on) ≤ 8 ns, tf ≤ 35 ns), the device supports reliable switching up to ~500 kHz in non-resonant topologies. Above this, gate drive strength and PCB layout parasitics dominate losses - actual limit depends on gate resistor value and load inductance.
Does BSP88E6327 have avalanche rating?
No - the datasheet does not specify single-pulse or repetitive avalanche energy ratings (EAS). It is not characterized for unclamped inductive switching and must be used with external snubbers or clamps in flyback or relay-driving applications to avoid failure.
BSP88E6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 240 V
- Current - Continuous Drain (Id) @ 25°C:
- 350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 6Ohm @ 350mA, 10V
- Vgs(th) (Max) @ Id:
- 1.4V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.8 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 95 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.7W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT223-4
BSP88E6327 FAQ
1.How can I place an order for BSP88E6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSP88E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSP88E6327 reliable?
The price and inventory of BSP88E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP88E6327 is usually 5 days.
3.What payment methods are accepted for BSP88E6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP88E6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSP88E6327?
BSP88E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSP88E6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSP88E6327?
For technical support, including BSP88E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP88E6327 requirements.
6.How does Aetrix verify that BSP88E6327 is sourced from the original manufacturer or authorized distributors?
All BSP88E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP88E6327 meets industry standards.
7.What is the process for return or replacement of BSP88E6327?
All BSP88E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSP88E6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSP88E6327 part is unused and in its original packaging.
Return procedure for BSP88E6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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