Infineon Technologies BSR302NL6327HTSA1

Overview

BSR302NL6327HTSA1 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET in PG-SC-59 (SOT-23 compatible) package, rated for 30 V V_DS, 3.7 A continuous drain current at T_A=25 °C, and 23 mΩ R_DS(on) at V_GS=10 V. It is avalanche-rated, dv/dt-rated, AEC-Q101 qualified, and designed for automotive and industrial switching applications requiring robustness and logic-level gate drive.

For engineers reviewing the BSR302NL6327HTSA1 datasheet, BSR302NL6327HTSA1 pinout, BSR302NL6327HTSA1 application, or BSR302NL6327HTSA1 equivalent, this device supports high-reliability low-voltage switching with verified thermal performance, integrated body diode recovery (t_rr = 13.5 ns), and RoHS-compliant lead-free plating - critical for automotive power management, LED drivers, and load-switching circuits.

Technical Context

This OptiMOS®2 small-signal transistor uses a trench-based silicon process optimized for low R_DS(on) and fast switching. Its logic-level threshold (V_GS(th) = 1.2–2.0 V typ.) enables direct drive from 3.3 V/5 V microcontrollers without gate boosting. The device integrates an avalanche-rated body diode with Q_rr = 5.0 nC and t_rr = 13.5 ns under defined test conditions.

Thermal design is constrained by R_thJA = 250 K/W (minimal footprint), limiting continuous power dissipation to 0.5 W at 25 °C ambient. Dynamic parameters include C_iss = 750 pF max, Q_g = 6.6 nC max, and t_d(on)/t_f = 6.8 ns / 2.2 ns - supporting efficient PWM operation up to several hundred kHz in compact layouts.

Key Specifications

Pinout & Package

BSR302NL6327HTSA1 is housed in PG-SC-59 - a surface-mount package identical in footprint to industry-standard SOT-23 but with enhanced thermal and mechanical robustness per Infineon's specification. Dimensions: 3.0 × 1.3 × 0.9 mm (L × W × H), with gull-wing leads and 0.95 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with DMN3026LSD-13 and IPB031N03L, BSR302NL6327HTSA1 delivers optimal balance of logic-level drive, SOT-23 compatibility, AEC-Q101 qualification, and cost for space-constrained automotive and industrial low-power switching - without over-specifying package size or conduction loss.

Availability

BSR302NL6327HTSA1 is available at Aetrix Electronics and suitable for automotive interior lighting, industrial PLC I/O modules, USB-C accessory power management, and smart home sensor node power control requiring stable component supply across extended production cycles.

Supply support for BSR302NL6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap technologies.

The OptiMOS®2 product line delivers high-performance, logic-level N-channel MOSFETs optimized for low-voltage switching in automotive, industrial, and consumer applications - emphasizing ruggedness, thermal efficiency, and AEC-Q101 compliance.

FAQ

Is BSR302NL6327HTSA1 suitable for 3.3 V microcontroller gate drive?

Yes. With V_GS(th) = 1.2–2.0 V and guaranteed R_DS(on) ≤ 36 mΩ at V_GS = 4.5 V, it achieves full enhancement using standard 3.3 V GPIO outputs when paired with appropriate gate resistor sizing (e.g., 10–47 Ω) to manage Q_g = 4.4–6.6 nC. No level shifter is required.

What is the maximum allowable junction temperature during continuous operation?

The absolute maximum junction temperature is 150 °C. Under continuous DC conditions at T_A = 25 °C, thermal limits constrain I_D to 3.7 A (P_tot = 0.5 W, R_thJA = 250 K/W). Derating curves on page 4 of the datasheet define safe operating area down to zero current at 150 °C ambient.

Does BSR302NL6327HTSA1 include an integrated ESD protection diode?

No. It is rated per JESD22-A114-HMB Class 0 (0–250 V), indicating no on-chip ESD protection diode. External TVS or RC filtering is recommended for gate protection in high-noise environments, especially when used with long PCB traces or connectors.

Can this MOSFET replace a standard SOT-23 N-channel transistor in existing designs?

Yes - PG-SC-59 is footprint-compatible with JEDEC SOT-23. Pin 1 (Source), Pin 2 (Gate), Pin 3 (Drain) match standard SOT-23 orientation. However, verify layout thermal relief and solder mask expansion per Infineon's GPS09473 outline drawing, as PG-SC-59 has tighter dimensional tolerances and optimized thermal pad geometry.