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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS119L6433

Name: BSS119L6433
Brand: Infineon Technologies
SKU: BSS119L6433
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS119L6433

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS119L6433.pdf

Description:: SMALL SIGNAL N-CHANNEL MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSS119L6433 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS™ small-signal MOSFET in PG-SOT23 package, rated for 100 V V_DS, 6 Ω R_DS(on) at V_GS = 10 V and I_D = 0.17 A, and qualified to AEC-Q101 for automotive use. It delivers dv/dt immunity up to 6 kV/µs and supports low-voltage gate drive down to 3.4 V plateau voltage.

For engineers reviewing the BSS119L6433 datasheet, BSS119L6433 pinout, BSS119L6433 application, or BSS119L6433 equivalent, key selection criteria include its logic-level gate threshold (1.3–2.3 V), low R_DS(on) stability over temperature, integrated body diode with 21.7–32.5 ns reverse recovery time, and AEC-Q101 qualification for under-hood signal switching.

Technical Context

This MOSFET operates in enhancement mode with a gate threshold voltage of 1.3–2.3 V at I_D = 50 µA, enabling direct interface with 3.3 V and 5 V logic controllers. Its dv/dt rating of 6 kV/µs ensures robustness against fast transient voltage spikes in inductive load switching.

The device integrates a monolithic body diode with V_SD = 0.8–1.2 V at I_F = I_S, and exhibits Q_rr = 10–15 nC and t_rr = 21.7–32.5 ns under defined test conditions (V_R = 50 V, dI_F/dt = 100 A/µs), supporting efficient flyback and freewheeling in compact DC-DC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	100 V - supports 24 V and 48 V automotive and industrial bus applications with margin
R_DS(on) @ V_GS=10 V	3.4–6 Ω - enables low conduction loss in low-current switching paths (≤170 mA)
I_D continuous	0.17 A @ T_A = 25 °C - suitable for signal-level load control and bias circuits
V_GS(th)	1.3–2.3 V - ensures reliable turn-on with standard 3.3 V microcontroller GPIO
dv/dt immunity	6 kV/µs - prevents false triggering in noisy motor-drive or relay-driver environments
t_rr / Q_rr	21.7–32.5 ns / 10–15 nC - reduces switching loss and EMI in high-frequency PWM (<1 MHz) topologies
P_tot	0.36 W @ T_A = 25 °C - requires minimal heatsinking on standard PCB copper

Pinout & Package

Package: PG-SOT23 (JEDEC TO-236AB), surface-mount, lead-free, tape-and-reel (10,000 pcs/reel, L6433 marking).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Accepts logic-level voltage (≥3.4 V plateau) to fully enhance channel; low C_iss (60–78 pF) eases drive design
2 (Source)	Reference node	Common return for gate drive and load current; tied to system ground in low-side switch configuration
3 (Drain)	Power output	Switches up to 100 V loads; connects to inductive or resistive load; body diode anode is at source

Key Features

Feature	Design Value
Logic-level gate drive	Operates reliably with 3.3 V or 5 V MCU outputs without level-shifting circuitry
AEC-Q101 qualified	Validated for automotive applications including engine control modules and body electronics
dv/dt rated	Immune to spurious turn-on during fast voltage transients common in solenoid and relay drivers
Low R_DS(on) drift vs. temperature	R_DS(on) increases only ~2× from 25 °C to 150 °C, ensuring stable power loss across operating range
Integrated body diode	Enables self-contained freewheeling in low-power buck or flyback converters without external diode

Applications

Automotive LED Headlamp Control

Industrial Sensor Bias Switching

Use Scenario: Switching 12 V/24 V LED strings in adaptive front-lighting systems with PWM dimming.

IC Role / Device Role / Timing Role: Low-side logic-level switch controlling LED current path; handles <170 mA per channel with fast turn-off (t_f = 27–40 ns).

Use Value: Eliminates need for gate driver IC due to 3.4 V gate plateau and 1.3–2.3 V V_GS(th), reducing BOM count and layout area.

Use Scenario: Enabling/disabling precision analog sensor bias rails in programmable logic controllers.

IC Role / Device Role / Timing Role: High-voltage (100 V) signal switch isolating sensor supply during standby; operates at <100 kHz switching frequency.

Use Value: Provides clean rail enable with <0.1 µA I_DSS leakage at 100 V, preserving sensor accuracy and system sleep current.

USB-C Power Path Management

Smart Home Relay Driver Interface

Use Scenario: Controlling 5 V/9 V/15 V power path selection in USB PD sink adapters.

IC Role / Device Role / Timing Role: Low-R_DS(on) pass switch between input sources; withstands 100 V transients per IEC 61000-4-5.

Use Value: Delivers <6 Ω on-resistance at 4.5 V gate drive, minimizing voltage drop and thermal rise in space-constrained adapters.

Use Scenario: Driving 12 V/24 V coil relays in smart thermostats and HVAC controllers.

IC Role / Device Role / Timing Role: Logic-compatible MOSFET interfacing MCU GPIO to relay coil; absorbs back-EMF via integrated diode.

Use Value: Leverages 6 kV/µs dv/dt rating and 21.7–32.5 ns t_rr to suppress coil-induced ringing without snubber components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 3.5 Ω @ 4.5 V (vs. 4.9 Ω typ for BSS119); higher C_iss (100 pF)	Optimized for higher-speed switching (>500 kHz); less dv/dt immune (not rated)	Prefer when gate drive strength exceeds 10 mA and dv/dt stress is low
BS170	V_DS = 60 V (vs. 100 V); R_DS(on) = 5 Ω @ 10 V; not AEC-Q101 qualified	General-purpose prototyping; unsuitable for automotive or 48 V systems	Select only for non-automotive, ≤60 V, cost-sensitive designs

Compared with DMN2004LK-7 and BS170, the BSS119L6433 uniquely combines 100 V rating, AEC-Q101 qualification, and 6 kV/µs dv/dt immunity-making it the only choice for safety-critical 24 V/48 V automotive signal switching where reliability under electrical stress is mandatory.

Availability

BSS119L6433 is available at Aetrix Electronics and suitable for automotive LED control, industrial sensor biasing, USB-C power path management, and smart home relay interfaces requiring stable component supply and long-term lifecycle support.

Supply support for BSS119L6433 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

The SIPMOS™ small-signal transistor product line targets high-reliability, logic-compatible switching in automotive and industrial control systems-designed specifically for robust operation under harsh electrical and thermal conditions.

FAQ

Is BSS119L6433 suitable for driving a 24 V relay coil?

Yes. With 100 V V_DS rating and 6 kV/µs dv/dt immunity, it safely switches 24 V relay coils while suppressing back-EMF-induced false triggering. Its 0.17 A continuous drain current supports typical 24 V relay coils drawing ≤150 mA, and the integrated body diode provides freewheeling without external components.

What is the maximum gate voltage that can be applied to BSS119L6433?

The absolute maximum gate-source voltage is ±20 V. Operation above ±12 V is not recommended for long-term reliability. For logic-level compatibility, gate drive should be limited to 3.3 V or 5 V with series resistance to limit peak current during fast transitions, given its 60–78 pF input capacitance.

Does BSS119L6433 require a gate resistor in typical applications?

A gate resistor (10–100 Ω) is recommended to dampen ringing and control slew rate, especially when driven by low-impedance MCU GPIO. The device's low input capacitance (60–78 pF) makes it susceptible to oscillation without proper gate termination, particularly in layouts with parasitic inductance.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has V_SD = 0.8–1.2 V and t_rr = 21.7–32.5 ns-slower and higher forward drop than most Schottky diodes-but sufficient for low-frequency (<100 kHz), low-current (<170 mA) freewheeling. It eliminates board space and solder joints but is not optimized for high-efficiency synchronous rectification.

BSS119L6433 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 170mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6Ohm @ 170mA, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 2.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 78 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS119L6433 FAQ

1.How can I place an order for BSS119L6433 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS119L6433 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS119L6433 reliable?

The price and inventory of BSS119L6433 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS119L6433 is usually 5 days.

3.What payment methods are accepted for BSS119L6433?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS119L6433 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS119L6433?

BSS119L6433 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS119L6433 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS119L6433?

For technical support, including BSS119L6433 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS119L6433 requirements.

6.How does Aetrix verify that BSS119L6433 is sourced from the original manufacturer or authorized distributors?

All BSS119L6433 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS119L6433 meets industry standards.

7.What is the process for return or replacement of BSS119L6433?

All BSS119L6433 units undergo pre-shipment inspection (PSI). If there is an issue with BSS119L6433, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS119L6433 part is unused and in its original packaging.

Return procedure for BSS119L6433:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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