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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSZ017NE2LS5IATMA1

Name: BSZ017NE2LS5IATMA1
Brand: Infineon Technologies
SKU: BSZ017NE2LS5IATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSZ017NE2LS5IATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSZ017NE2LS5IATMA1.pdf

Description:: MOSFET N-CH 25V 27A/40A TSDSON

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Product details

Overview

BSZ017NE2LS5IATMA1 from Infineon Technologies is an N-channel OptiMOS™ 5 Power-MOSFET rated for 25 V drain-source voltage, 1.7 mΩ max R_DS(on) at V_GS = 4.5 V, and 134 A continuous drain current at T_C = 25 °C. It integrates a monolithic Schottky-like body diode and is optimized for high-efficiency synchronous buck converters in server VRMs and POL DC-DC modules.

For engineers reviewing the BSZ017NE2LS5IATMA1 datasheet, BSZ017NE2LS5IATMA1 pinout, BSZ017NE2LS5IATMA1 application, or BSZ017NE2LS5IATMA1 equivalent, key selection criteria include low gate charge (Q_g = 10.5 nC), ultra-low R_DS(on), avalanche ruggedness (E_AS = 40 mJ), and TSDSON-8 FL package thermal performance for high-density power stages.

Technical Context

This device operates as a high-current, logic-level N-channel MOSFET with gate threshold voltage (V_GS(th)) between 1.2 V and 2.0 V and transconductance (g_fs) of 60–120 S. Its dynamic parameters-C_iss = 1500–2000 pF, C_oss = 750–1000 pF, and Q_gd = 2.3 nC-support fast switching with minimal Miller effect in hard-switched topologies.

The integrated Schottky-like diode delivers V_SD = 0.51–0.65 V at I_F = 7 A and T_j = 25 °C, with Q_rr = 12 nC under 400 A/µs di/dt. Thermal resistance R_thJC = 2.5 K/W enables efficient heat transfer to PCB copper when mounted on 6 cm² cooling area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for 12 V input rail applications with margin against transient overshoot.
R_DS(on), max @ V_GS=4.5 V	1.7 mΩ - Enables <1 W conduction loss at 75 A, critical for high-current point-of-load designs.
I_D, cont @ T_C=25 °C	134 A - Supports high-current single-phase or paralleled multi-phase VRM outputs without derating.
Q_g @ 0–4.5 V	10.5 nC - Reduces gate drive power and enables use with low-power drivers in compact controllers.
E_AS	40 mJ - Ensures robustness against inductive switching stress in synchronous rectification and motor control.
Q_oss	17.5 nC - Low output charge minimizes turn-off energy loss and improves efficiency in high-frequency operation.
R_thJC	2.5 K/W - Allows direct thermal path to heatsink or PCB plane, supporting >90% efficiency at 1 MHz switching.

Pinout & Package

TSDSON-8 FL (Thin Small Outline No-Lead, Flat Lead) package with exposed drain pad for thermal and electrical connection. 3.3 mm × 3.3 mm footprint, 0.55 mm height, JEDEC-compliant lead-free and halogen-free construction.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Drain (D)	All pins 1–7 and pin 8 are internally connected to drain; forms low-inductance, high-current path to PCB copper pour.
1, 2, 3, 4, 5, 6, 7, 8 (Source)	Source (S)	Pins 1–3 and 5–7 are source terminals; provides parallel low-resistance return path for high di/dt currents.
4	Gate (G)	Single gate input; isolated from drain/source; requires <10.5 nC charge for full enhancement at 4.5 V.

Key Features

Feature	Design Value
Optimized for high-performance buck converters	Low Q_g/R_DS(on) ratio (6.2 nC/mΩ) reduces switching + conduction loss trade-off in 500 kHz–2 MHz VRMs.
Monolithic integrated Schottky-like diode	V_SD = 0.51 V @ 7 A enables efficient synchronous rectification without external diode, reducing BOM count and layout area.
100% avalanche tested	Guarantees single-pulse E_AS ≥ 40 mJ across production lot, eliminating need for external snubbers in inductive load switching.
JEDEC-qualified for target applications	Complies with J-STD-020 (reflow) and JESD22-A108 (temperature cycling), ensuring reliability in industrial and computing environments.

Applications

Server Voltage Regulator Modules (VRMs)

AI Accelerator Board POL Converters

Use Scenario: High-current, multi-phase 12 V-to-0.8 V conversion powering CPU/GPU cores in datacenter servers.

IC Role / Device Role: High-side synchronous FET in interleaved buck stage, handling up to 134 A per phase with minimal conduction loss.

Use Value: 1.7 mΩ R_DS(on) cuts conduction loss by >35% vs. legacy 2.5 mΩ devices, directly improving VRM efficiency and thermal headroom.

Use Scenario: Compact 48 V-to-0.75 V point-of-load converter on PCIe-based AI accelerator cards with strict size constraints.

IC Role / Device Role: Low-side synchronous FET operating at 1 MHz with integrated body diode for zero-voltage switching assist.

Use Value: Q_rr = 12 nC and V_SD = 0.51 V reduce reverse recovery loss and dead-time penalty, enabling >92% efficiency at 50 A output.

Industrial Motor Drive Half-Bridges

Telecom Base Station DC-DC Stages

Use Scenario: 24 V BLDC motor gate driver stage requiring robust short-circuit protection and fast commutation.

IC Role / Device Role: Low-side switch in half-bridge topology, leveraging avalanche rating to withstand inductive kickback during fault conditions.

Use Value: E_AS = 40 mJ allows safe clamping of 20 A inductive spikes without external TVS, simplifying protection circuitry.

Use Scenario: 48 V intermediate bus converter feeding distributed 12 V/5 V rails in macro-cell base station power systems.

IC Role / Device Role: Primary-side switch in non-isolated buck regulator, operating continuously at 85 °C ambient with forced air cooling.

Use Value: R_thJC = 2.5 K/W and 85 A I_D @ T_C = 100 °C ensure stable operation without derating in thermally constrained enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6242PBF	R_DS(on) = 2.0 mΩ @ 4.5 V; Q_g = 12.5 nC; SO-8 package with higher R_thJA (62 K/W).	Lower current rating (100 A) and larger footprint limit use in ultra-dense VRMs.	Preferred where SO-8 compatibility or legacy layout reuse is required over thermal optimization.
DMTH10H025LPSQ	R_DS(on) = 1.8 mΩ @ 4.5 V; Q_g = 11.2 nC; PowerPAK® 1212-8 with R_thJC = 2.8 K/W.	Slightly higher R_DS(on) and thermal resistance reduce efficiency margin in 134 A designs.	Valid alternative when dual sourcing is needed and 0.1 mΩ R_DS(on) tolerance is acceptable.

Compared with IRLHS6242PBF and DMTH10H025LPSQ, BSZ017NE2LS5IATMA1 delivers the lowest R_DS(on) and best Q_g/R_DS(on) ratio in its class, making it optimal for thermally constrained, high-current buck stages where efficiency and power density are prioritized.

Availability

BSZ017NE2LS5IATMA1 is available at Aetrix Electronics and suitable for server VRMs, AI accelerator POL converters, and industrial motor drives requiring stable component supply and long-term manufacturing continuity.

Supply support for BSZ017NE2LS5IATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOS™ 5 family, engineered specifically for high-frequency, high-current DC-DC conversion in computing and communications infrastructure, emphasizing low R_DS(on), fast switching, and integrated diode performance.

FAQ

What is the maximum junction temperature for continuous operation?

The BSZ017NE2LS5IATMA1 has a maximum junction temperature (T_j) of 150 °C, validated per JEDEC JESD22-A108. Continuous operation at this limit requires thermal design ensuring case temperature does not exceed 100 °C at 85 A, based on R_thJC = 2.5 K/W and adequate PCB copper area.

Does this MOSFET require a gate resistor for stability in high-speed switching?

Yes-a gate resistor of 1.6 Ω is specified in the datasheet for switching characterization (td(on)/tr/tf). For 1–2 MHz operation, a 1–3 Ω series resistor is recommended to dampen ringing caused by gate loop inductance and prevent unintended oscillation or shoot-through in half-bridge configurations.

Can BSZ017NE2LS5IATMA1 be used as a synchronous rectifier in a flyback converter?

No-it is an N-channel MOSFET requiring gate drive above source potential, making it unsuitable for secondary-side synchronous rectification in flyback topologies without a dedicated floating gate driver. Its design targets primary-side high-side or low-side buck switching, not isolated secondary-side control.

Is the integrated body diode suitable for reverse recovery testing per JEDEC JESD24-11?

Yes-the device is characterized for reverse recovery charge (Q_rr = 12 nC) and di/dt = 400 A/µs, meeting JEDEC JESD24-11 test conditions. The monolithic Schottky-like diode exhibits soft recovery behavior confirmed in Diagram 12, minimizing EMI in high-di/dt applications.

BSZ017NE2LS5IATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 2000 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSDSON-8-FL

BSZ017NE2LS5IATMA1 FAQ

1.How can I place an order for BSZ017NE2LS5IATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSZ017NE2LS5IATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSZ017NE2LS5IATMA1 reliable?

The price and inventory of BSZ017NE2LS5IATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSZ017NE2LS5IATMA1 is usually 5 days.

3.What payment methods are accepted for BSZ017NE2LS5IATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSZ017NE2LS5IATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSZ017NE2LS5IATMA1?

BSZ017NE2LS5IATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSZ017NE2LS5IATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSZ017NE2LS5IATMA1?

For technical support, including BSZ017NE2LS5IATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSZ017NE2LS5IATMA1 requirements.

6.How does Aetrix verify that BSZ017NE2LS5IATMA1 is sourced from the original manufacturer or authorized distributors?

All BSZ017NE2LS5IATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSZ017NE2LS5IATMA1 meets industry standards.

7.What is the process for return or replacement of BSZ017NE2LS5IATMA1?

All BSZ017NE2LS5IATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSZ017NE2LS5IATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSZ017NE2LS5IATMA1 part is unused and in its original packaging.

Return procedure for BSZ017NE2LS5IATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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