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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSZ035N03MSGATMA1

Name: BSZ035N03MSGATMA1
Brand: Infineon Technologies
SKU: BSZ035N03MSGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSZ035N03MSGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSZ035N03MSGATMA1.pdf

Description:: MOSFET N-CH 30V 18A/40A 8TSDSON

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Product details

Overview

BSZ035N03MSGATMA1 from Infineon Technologies is an N-channel 30 V OptiMOS™ 3 M-Series Power-MOSFET in PG-TSDSON-8 package, optimized for 5 V gate drive in notebook CPU VRMs and point-of-load converters. It delivers R_DS(on) = 3.5 mΩ @ V_GS = 10 V and 4.3 mΩ @ V_GS = 4.5 V, supports 113 A continuous drain current at T_C = 25 °C, and features 100% avalanche tested ruggedness.

For engineers reviewing the BSZ035N03MSGATMA1 datasheet, BSZ035N03MSGATMA1 pinout, BSZ035N03MSGATMA1 application, or BSZ035N03MSGATMA1 equivalent, key selection criteria include low gate charge × R_DS(on) figure-of-merit (FOM), thermal resistance (R_thJC = 1.8 K/W), and JEDEC-qualified reliability for high-frequency SMPS designs.

Technical Context

This MOSFET employs trench-based silicon technology with optimized cell pitch and reduced gate-drain charge (Q_gd = 5.9–9.9 nC) to minimize switching losses in synchronous buck topologies. Its low R_DS(on) and high transconductance (g_fs = 47–94 S) enable efficient operation at 4.5 V gate drive, supporting fast transient response in POL regulators.

The device integrates a robust body diode with Q_rr = 20 nC and V_SD = 0.81–1.1 V at I_F = 20 A, enabling reliable synchronous rectification and reverse recovery performance in high-efficiency DC-DC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and 5 V logic-level gate drive systems.
R_DS(on) max @ V_GS = 10 V	3.5 mΩ - Enables <1 W conduction loss at 100 A, critical for high-current CPU/GPU VRMs.
R_DS(on) max @ V_GS = 4.5 V	4.3 mΩ - Ensures stable on-resistance under typical 5 V driver output, eliminating need for level-shifting.
Q_g total @ 4.5 V	27–35 nC - Low gate charge reduces driver power loss and enables >1 MHz switching in compact SMPS.
R_thJC	1.8 K/W - High thermal conductivity allows direct mounting to copper pads, simplifying thermal design in space-constrained PCBs.
I_D continuous @ T_C = 25 °C	113 A - Supports single-phase high-current outputs in server and workstation power delivery.
C_iss	4300–5700 pF - Predictable input capacitance aids accurate gate drive sizing and EMI modeling.

Pinout & Package

Package: PG-TSDSON-8 (3.3 mm × 3.3 mm, 0.65 mm pitch, exposed drain pad). Thermally enhanced surface-mount package with 8 terminals: 3 source pins, 1 gate, 1 drain (exposed pad), and 3 additional source connections for low-inductance, high-current routing.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 7, 8	Source (S)	Multiple parallel source terminals reduce package inductance and improve current sharing in high-di/dt applications.
4	Gate (G)	Single gate input with low gate resistance (R_G = 0.9–3.2 Ω) for controlled turn-on/turn-off timing.
6	Drain (D)	Exposed thermal pad - primary thermal path to PCB; electrically connected to drain, must be soldered to ground plane or dedicated drain copper.

Key Features

Feature	Design Value
Optimized 5 V gate drive compatibility	Guaranteed R_DS(on) ≤ 4.3 mΩ at V_GS = 4.5 V enables direct interface with standard 5 V PWM controllers without gate drivers.
Low gate charge × R_DS(on) FOM	Q_g × R_DS(on) ≈ 115–150 nC·mΩ - minimizes combined conduction and switching losses in high-frequency SMPS.
100% unclamped inductive switching (UIS) tested	Rated for single-pulse avalanche energy E_AS = 150 mJ - ensures robustness against load dump and inductive kickback in real-world circuits.
JEDEC-qualified reliability	Qualified per J-STD-20 and JESD22 - validated for temperature cycling, humidity, and mechanical stress in industrial and computing environments.

Applications

Notebook CPU Voltage Regulator

Server Point-of-Load Converter

Use Scenario: High-current, fast-transient regulation for Intel/AMD mobile processors requiring sub-1 V output at up to 100 A.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter, switching at 500 kHz–1 MHz.

Use Value: Low R_DS(on) and Q_g reduce power loss by ≥12% vs. legacy 30 V MOSFETs, extending battery life and lowering thermal load on thin-profile chassis.

Use Scenario: Single-phase 12 V input to 0.8 V/80 A output for GPU or ASIC power domains in data center servers.

IC Role / Device Role / Timing Role: Primary high-side switch in digitally controlled VRM with adaptive gate drive timing.

Use Value: 1.8 K/W R_thJC enables >90% efficiency at full load while maintaining junction temperature <110 °C on standard 4-layer PCBs.

VGA/Graphics Card VRM

Industrial Motor Control Gate Driver Stage

Use Scenario: Dual-rail power delivery (core + memory) on PCIe graphics cards with dynamic load steps exceeding 50 A/µs.

IC Role / Device Role / Timing Role: High-side switch in interleaved buck stage, operating with tight dead-time control to prevent shoot-through.

Use Value: Low Q_gd (5.9–9.9 nC) and fast turn-off delay (38 ns) support precise timing margins and reduce cross-conduction risk.

Use Scenario: Half-bridge high-side switch in 24 V BLDC motor gate driver IC reference design.

IC Role / Device Role / Timing Role: Discrete power switch replacing integrated driver outputs where higher current or thermal headroom is required.

Use Value: Avalanche-rated ruggedness (I_AS = 20 A, E_AS = 150 mJ) withstands inductive flyback during emergency stop events without external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 4.2 mΩ @ 4.5 V; Q_g = 22 nC; PG-TSDSON-8 package; no avalanche rating specified.	Lacks 100% UIS testing; suitable only for non-critical consumer-grade POL where fault tolerance is secondary.	Select when cost sensitivity outweighs ruggedness requirements and thermal margin is ample.
DMN3025LFG-7	R_DS(on) = 2.5 mΩ @ 4.5 V; Q_g = 37 nC; same package; qualified to AEC-Q101 but not JEDEC for computing.	Better conduction loss but higher switching loss; automotive-qualified but over-specified for notebook use.	Prefer for automotive infotainment VRMs where AEC-Q101 compliance is mandatory.

Compared with IRLHS6342TRPBF and DMN3025LFG-7, BSZ035N03MSGATMA1 uniquely balances low Q_g × R_DS(on), JEDEC qualification for computing, and guaranteed avalanche ruggedness-making it optimal for high-reliability, high-frequency notebook and server VRMs where both efficiency and fault tolerance are critical.

Availability

BSZ035N03MSGATMA1 is available at Aetrix Electronics and suitable for notebook CPU voltage regulators, server point-of-load converters, and VGA graphics card VRMs requiring stable component supply across multi-year production cycles.

Supply support for BSZ035N03MSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOS™ 3 M-Series, designed specifically for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure where 5 V gate drive compatibility and thermal performance are decisive.

FAQ

What is the maximum safe operating temperature for BSZ035N03MSGATMA1?

The device has a maximum junction temperature (T_j) of 150 °C per its absolute maximum ratings. Derating begins above T_C = 25 °C; at T_C = 100 °C, continuous drain current drops to 72 A (V_GS = 10 V) or 65 A (V_GS = 4.5 V). Thermal design must ensure R_thJA ≤ 60 K/W on a 6 cm² PCB copper area to avoid exceeding T_j.

Does BSZ035N03MSGATMA1 require a gate resistor for stability?

Yes-a gate resistor (typically 1–5 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent spurious turn-on due to dV/dt coupling. The internal gate resistance is 0.9–3.2 Ω, but external series resistance improves EMI performance and controls slew rate in high-speed switching applications.

Can BSZ035N03MSGATMA1 be used in synchronous rectification mode?

Yes-the integrated body diode has V_SD = 0.81–1.1 V at 20 A and Q_rr = 20 nC, making it suitable for synchronous rectification in buck converters. However, for optimal efficiency, it should be actively driven as a low-side switch rather than relying solely on body diode conduction during freewheeling.

Is BSZ035N03MSGATMA1 halogen-free and RoHS compliant?

Yes-per the datasheet, it uses Pb-free plating and complies with RoHS Directive 2011/65/EU. It is also halogen-free in accordance with IEC 61249-2-21, with chlorine and bromine content below 900 ppm each and total halogens <1500 ppm.

BSZ035N03MSGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 74 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5700 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSDSON-8

BSZ035N03MSGATMA1 FAQ

1.How can I place an order for BSZ035N03MSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSZ035N03MSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSZ035N03MSGATMA1 reliable?

The price and inventory of BSZ035N03MSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSZ035N03MSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSZ035N03MSGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSZ035N03MSGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSZ035N03MSGATMA1?

BSZ035N03MSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSZ035N03MSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSZ035N03MSGATMA1?

For technical support, including BSZ035N03MSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSZ035N03MSGATMA1 requirements.

6.How does Aetrix verify that BSZ035N03MSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSZ035N03MSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSZ035N03MSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSZ035N03MSGATMA1?

All BSZ035N03MSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSZ035N03MSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSZ035N03MSGATMA1 part is unused and in its original packaging.

Return procedure for BSZ035N03MSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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