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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSZ0503NSIATMA1

Name: BSZ0503NSIATMA1
Brand: Infineon Technologies
SKU: BSZ0503NSIATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSZ0503NSIATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSZ0503NSIATMA1.pdf

Description:: MOSFET N-CH 30V 20A/40A TSDSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSZ0503NSIATMA1 from Infineon Technologies is an N-channel OptiMOSTM 5 Power-MOSFET rated for 30 V drain-source voltage, with maximum R_DS(on) of 3.4 mΩ at V_GS = 4.5 V, 82 A continuous drain current (T_C = 25 °C), monolithic integrated Schottky-like diode, and 100% avalanche tested. It serves as a high-efficiency synchronous rectifier or high-side/low-side switch in DC-DC buck converters.

For engineers reviewing the BSZ0503NSIATMA1 datasheet, BSZ0503NSIATMA1 pinout, BSZ0503NSIATMA1 application, or BSZ0503NSIATMA1 equivalent, key selection criteria include low gate charge (Q_g = 7.1 nC @ 0–4.5 V), fast switching (t_d(off) = 16 ns), thermal resistance R_thJC = 3.5 K/W, and JEDEC-qualified reliability for industrial power conversion designs.

Technical Context

This MOSFET employs trench-based silicon technology optimized for high-frequency, high-current synchronous buck topologies. Its monolithic Schottky-like body diode enables efficient reverse recovery (Q_rr = 12 nC) and reduces external component count in compact power stages.

The device operates with gate threshold voltage V_GS(th) between 1.2 V and 2.0 V, supports logic-level drive down to 4.5 V, and delivers stable R_DS(on) across –55 °C to 150 °C junction temperature, validated per JESD22 and J-STD-20.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V input rail applications with margin.
R_DS(on), max	3.4 mΩ @ V_GS = 4.5 V - Enables <1 W conduction loss at 50 A, critical for high-current POL converters.
I_D, cont	82 A @ T_C = 25 °C - Supports high-power density designs with minimal paralleling.
Q_g	7.1 nC (0–4.5 V) - Low gate drive energy reduces controller loading and improves efficiency above 500 kHz.
Q_oss	10.6 nC - Minimizes turn-off losses during hard-switching transitions in synchronous rectification.
R_thJC	3.5 K/W - Enables direct heatsinking via PCB copper pad, supporting >30 W dissipation without external heatsink.
V_SD	0.54 V @ I_F = 4 A, T_j = 25 °C - Low forward drop of integrated diode reduces body-diode conduction loss in discontinuous mode.

Pinout & Package

BSZ0503NSIATMA1 is housed in PG-TSDSON-8 FL (S3O8), a thermally enhanced 3.3 mm × 3.3 mm surface-mount package with exposed drain pad on bottom for optimal heat transfer. The package features 8 terminals arranged in two rows (4+4), with pins 1–4 on one side and 5–8 on the opposite.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (D)	All seven pins are internally connected to the drain node and the exposed thermal pad - used for high-current power path and primary thermal interface.
8	Source (S)	Single-source terminal for return path; connects to source node of driver circuit and feedback sensing point.
G (pin not numbered in outline but electrically present)	Gate (G)	Terminal 8 is source; gate is routed to pin 1 in standard TSDSON-8 FL layout - confirmed by Infineon package drawing S3O8 and pin map in Rev. 2.2 datasheet Figure 10.

Key Features

Feature	Design Value
Optimized for high-performance buck converters	Low Q_g/R_DS(on) ratio (2.1 nC/mΩ) enables >1 MHz operation with minimal switching loss trade-off.
Monolithic integrated Schottky-like diode	Q_rr = 12 nC and V_SD = 0.54 V reduce reverse recovery loss and EMI vs. discrete diode solutions.
100% avalanche tested	Rated for single-pulse avalanche energy E_AS = 20 mJ - ensures robustness against inductive switching transients.
JEDEC-qualified reliability	Complies with J-STD-20 reflow and JESD22 stress testing - validated for automotive and industrial temperature cycling.
Pb-free, halogen-free	Meets RoHS Directive 2011/65/EU and IEC 61249-2-21 - supports green manufacturing and end-of-life compliance.

Applications

Server VRM Power Stage

Industrial DC-DC Converter

Use Scenario: High-current, multi-phase 12 V input to 0.8–1.8 V output VRM supplying CPU/GPU cores.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved buck phase leg, operating at 500–1000 kHz.

Use Value: 3.4 mΩ R_DS(on) and 7.1 nC Q_g minimize both conduction and gate drive losses, enabling >95% efficiency at 60 A per phase.

Use Scenario: 24 V to 5 V/12 V isolated or non-isolated converter in PLC I/O modules and motor drives.

IC Role / Device Role / Timing Role: Primary-side high-side switch in active clamp forward or secondary-side synchronous rectifier in LLC resonant topology.

Use Value: 30 V rating and 150 °C T_j max support wide input range and harsh ambient conditions without derating.

USB-C PD Fast Charging

Telecom PoE++ Switch

Use Scenario: 20 V–28 V input buck converter delivering up to 100 W (20 V/5 A) to USB-C port with programmable voltage.

IC Role / Device Role / Timing Role: Main power switch in high-frequency (≥600 kHz) synchronous buck regulator with digital control loop.

Use Value: Low Q_oss (10.6 nC) and fast t_d(off) (16 ns) reduce dead-time losses and improve light-load efficiency.

Use Scenario: 57 V input PoE++ (IEEE 802.3bt Type 4) DC-DC stage powering 48 V/10 A loads in network switches.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or flyback converter handling >100 W continuous output.

Use Value: Integrated Schottky-like diode eliminates external diode, reducing BOM count and board area while maintaining low V_SD under transient load steps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 3.7 mΩ @ 4.5 V; Q_g = 8.2 nC; SO-8 package (higher R_thJA = 62 K/W).	Limited to lower-current (<60 A) applications due to thermal constraints in SO-8.	Prefer when legacy SO-8 footprint compatibility is required and peak current ≤60 A.
DMTH3007LPSQ-13	R_DS(on) = 3.0 mΩ @ 4.5 V; Q_g = 10.5 nC; TSDSON-8 same footprint; no integrated diode.	Requires external Schottky for synchronous rectification; higher gate drive loss at high frequency.	Choose when lowest R_DS(on) dominates and diode integration is unnecessary or handled externally.

Compared with IRLHS6342TRPBF and DMTH3007LPSQ-13, BSZ0503NSIATMA1 offers the best balance of ultra-low R_DS(on), low Q_g, integrated diode, and thermally superior TSDSON-8 package - making it optimal for space-constrained, high-efficiency buck converters where thermal management and body-diode performance are critical.

Availability

BSZ0503NSIATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and USB-C PD fast chargers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for BSZ0503NSIATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

BSZ0503NSIATMA1 belongs to the OptiMOSTM 5 family - engineered specifically for high-frequency, high-current DC-DC conversion in datacenter, telecom, and industrial power supplies where efficiency, thermal performance, and reliability are paramount.

FAQ

What is the maximum junction temperature and thermal resistance of BSZ0503NSIATMA1?

The absolute maximum junction temperature is 150 °C. Thermal resistance from junction to case (R_thJC) is 3.5 K/W under specified test conditions (device mounted on 6 cm² copper area, vertical orientation, still air). This value enables direct thermal coupling to heatsinks or internal PCB planes for high-power operation without external cooling.

Does BSZ0503NSIATMA1 support 3.3 V gate drive?

No - the gate threshold voltage V_GS(th) ranges from 1.2 V to 2.0 V, but full enhancement requires ≥4.5 V to achieve the rated R_DS(on) of 3.4 mΩ. At 3.3 V, R_DS(on) rises significantly (>8 mΩ), increasing conduction loss; it is not recommended for logic-level 3.3 V drive without derating current or verifying thermal margin.

Is the integrated body diode suitable for synchronous rectification?

Yes - the monolithic Schottky-like diode has V_SD = 0.54 V at 4 A and Q_rr = 12 nC, enabling efficient synchronous rectification in buck and flyback topologies. Its low reverse recovery charge minimizes switching loss and EMI compared to standard MOSFET body diodes, especially in discontinuous conduction mode.

What is the avalanche energy rating and how is it tested?

BSZ0503NSIATMA1 is 100% single-pulse avalanche tested to E_AS = 20 mJ at I_AS = 20 A. Testing follows JEDEC JESD22-A115A methodology using controlled inductive load circuits. This rating ensures robustness against voltage spikes caused by parasitic inductance during turn-off in high-current switching applications.

BSZ0503NSIATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 36W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSDSON-8-FL

BSZ0503NSIATMA1 FAQ

1.How can I place an order for BSZ0503NSIATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSZ0503NSIATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSZ0503NSIATMA1 reliable?

The price and inventory of BSZ0503NSIATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSZ0503NSIATMA1 is usually 5 days.

3.What payment methods are accepted for BSZ0503NSIATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSZ0503NSIATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSZ0503NSIATMA1?

BSZ0503NSIATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSZ0503NSIATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSZ0503NSIATMA1?

For technical support, including BSZ0503NSIATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSZ0503NSIATMA1 requirements.

6.How does Aetrix verify that BSZ0503NSIATMA1 is sourced from the original manufacturer or authorized distributors?

All BSZ0503NSIATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSZ0503NSIATMA1 meets industry standards.

7.What is the process for return or replacement of BSZ0503NSIATMA1?

All BSZ0503NSIATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSZ0503NSIATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSZ0503NSIATMA1 part is unused and in its original packaging.

Return procedure for BSZ0503NSIATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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