Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSZ0910LSATMA1

Name: BSZ0910LSATMA1
Brand: Infineon Technologies
SKU: BSZ0910LSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BSZ0910LSATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSZ0910LSATMA1.pdf

Description:: MOSFET N-CH 30V 18A/40A TSDSON

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:13,733

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BSZ0910LSATMA1 from Infineon Technologies is an N-channel OptiMOSTM 5 Power-MOSFET rated at 30 V V_DS, with R_DS(on) = 4.6 mΩ (typ) at V_GS = 4.5 V, 30 A ID, integrated monolithic Schottky-like body diode, and TSDSON-8 FL package. It is optimized for high-efficiency USB-PD and wireless charging power stages.

For engineers reviewing the BSZ0910LSATMA1 datasheet, BSZ0910LSATMA1 pinout, BSZ0910LSATMA1 application, or BSZ0910LSATMA1 equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, Q_g = 17 nC (0–10 V), thermal resistance R_thJC = 3.4 K/W, and synchronous FET gate charge Q_g(sync) = 6.8 nC - critical for high-frequency DC-DC converters.

Technical Context

This MOSFET employs Infineon's OptiMOSTM 5 process for enhanced conduction and switching efficiency in synchronous buck topologies. Its low threshold voltage (V_GS(th) = 1.2–2.0 V) enables robust turn-on with 4.5 V gate drive, while the integrated Schottky-like diode reduces reverse recovery losses (Q_rr = 2 nC).

The TSDSON-8 FL package features exposed drain pad on bottom side and top-side thermal path (R_thJC,top = 20 K/W), supporting dual-sided cooling. Dynamic parameters - C_iss = 1100 pF, C_oss = 460 pF, C_rss = 64 pF - are optimized for ZVS and resonant operation in high-frequency adapters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V input systems and USB-PD 3.0 secondary-side synchronous rectification.
R_DS(on) @ 4.5 V	4.6 mΩ (typ) - Enables <1.4 W conduction loss at 30 A, critical for thermally constrained adapter PCBs.
Q_g (0–10 V)	17 nC - Determines gate driver current requirement (e.g., ~1.7 A peak for 10 ns rise time), directly impacting switching loss in 500 kHz–1 MHz designs.
R_thJC	3.4 K/W - Allows 37 W power dissipation at 25 °C case temperature; supports high-current operation with minimal heatsinking.
Q_oss	12 nC - Defines output energy stored in C_oss; impacts dead-time loss and ZVS feasibility in half-bridge configurations.
I_D (T_C=100 °C)	40 A - Sustains full-rated current under hot ambient conditions typical in enclosed chargers.
V_SD @ 3 A	0.56 V (typ) - Low forward voltage of integrated body diode minimizes conduction loss during dead-time in synchronous rectifiers.

Pinout & Package

TSDSON-8 FL (Thin Small Outline No-Lead, Flat Lead) is a 5 mm × 6 mm surface-mount package with exposed drain pad on underside and top-side thermal capability. Pin 1–4 and 5–8 are arranged in two rows; drain terminals occupy pins 1, 2, 3, 5, 6, 7; source occupies pins 4 and 8; gate is pin 3.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6, 7 (Drain)	High-current drain connection	Multiple parallel drain pins reduce current density and parasitic inductance; connected to large copper pour for thermal and electrical performance.
4, 8 (Source)	Source reference and return path	Dual-source pins minimize source inductance, improving gate control stability and reducing voltage overshoot during switching.
3 (Gate)	Control terminal	Single gate pin with low RG (0.9 Ω typ); layout must minimize loop inductance to preserve fast 3.3 ns td(on) and 3.0 ns tf.

Key Features

Feature	Design Value
Optimized for USB-PD & wireless charging	Enables >95% efficiency in 30 W–65 W compact adapters by minimizing combined conduction + switching loss at 4.5 V gate drive.
Integrated monolithic Schottky-like diode	Reduces reverse recovery charge (Q_rr = 2 nC) and eliminates external diode footprint, simplifying layout in synchronous rectifier designs.
Very low R_DS(on) @ 4.5 V	4.6 mΩ typ ensures low I²R loss even with controller ICs lacking 10 V gate drive - essential for cost-sensitive, single-supply gate drivers.
Superior thermal resistance	R_thJC = 3.4 K/W allows direct thermal coupling to heatsink or PCB copper, enabling 37 W continuous dissipation without forced air.

Applications

USB-PD AC-DC Adapters

Wireless Charging Transmitter

Use Scenario: Secondary-side synchronous rectification in 45–65 W GaN-based USB-PD adapters operating at 200–500 kHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, replacing Schottky diodes to reduce conduction loss and improve light-load efficiency.

Use Value: Achieves 0.5–0.8% absolute efficiency gain over discrete diodes due to R_DS(on) < 5 mΩ and V_SD < 0.56 V, directly extending thermal margin.

Use Scenario: Half-bridge power stage in 15 W Qi-compliant wireless charging transmitters driving 100–205 kHz resonant tanks.

IC Role / Device Role / Timing Role: High-frequency switching FET with low Q_g and C_rss, enabling clean zero-voltage switching transitions.

Use Value: C_rss = 64 pF and Q_g = 17 nC support reliable ZVS down to 100 kHz, reducing EMI and switching loss by >30% vs. standard MOSFETs.

Server VRM DrMOS Sub-Module

Industrial DC-DC Point-of-Load

Use Scenario: Bottom-side switch in 48 V–12 V intermediate bus converters used in AI server power delivery networks.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) synchronous FET paired with dedicated gate driver IC for sub-100 ns dead-time control.

Use Value: Dual-source pins and 40 A rating at T_C = 100 °C sustain >300 A peak current in multiphase layouts with minimal thermal derating.

Use Scenario: Isolated flyback or active-clamp forward converter in industrial PLC power supplies requiring 24 V input, 5 V/10 A output.

IC Role / Device Role / Timing Role: Primary-side switch in 100–300 kHz hard-switched topologies where low Q_g/Q_oss ratio improves efficiency and thermal behavior.

Use Value: Q_g/Q_oss = 1.42 enables faster turn-off with lower Miller-induced shoot-through risk, improving reliability under transient overload.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB053N3L3ATMA1	R_DS(on) = 3.3 mΩ @ 4.5 V (lower), Q_g = 21.5 nC (higher), same TSDSON-8 FL package	Better conduction loss but higher gate drive demand; less suitable for 4.5 V-only controllers	Select when gate drive voltage ≥ 5 V and thermal headroom is limited; avoid if using legacy 4.5 V PWM ICs.
SI7157DP-T1-GE3	R_DS(on) = 5.8 mΩ @ 4.5 V (higher), Q_g = 12.5 nC (lower), PowerPAK® SO-8 package (larger footprint)	Lower switching loss but higher conduction loss; requires larger PCB area and has higher R_thJA	Select when board space permits and gate drive strength is constrained; not recommended for ultra-compact USB-PD designs.

Compared with IPB053N3L3ATMA1 and SI7157DP-T1-GE3, BSZ0910LSATMA1 delivers optimal balance of low R_DS(on), moderate Q_g, and compact thermal package - making it the preferred choice for space-constrained, 4.5 V-driven USB-PD and wireless charging applications where both efficiency and layout density matter.

Availability

BSZ0910LSATMA1 is available at Aetrix Electronics and suitable for USB-PD AC-DC adapters, wireless charging transmitters, and industrial DC-DC point-of-load converters requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for BSZ0910LSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

BSZ0910LSATMA1 belongs to the OptiMOSTM 5 family - engineered specifically for high-frequency, high-efficiency power conversion in consumer and industrial SMPS, emphasizing low gate charge, low R_DS(on) at logic-level drive, and robust thermal performance.

FAQ

Is BSZ0910LSATMA1 suitable for synchronous rectification in 24 V input DC-DC converters?

Yes. With V_DS = 30 V, R_DS(on) = 4.6 mΩ at 4.5 V, and integrated Schottky-like diode (V_SD = 0.56 V), it supports efficient synchronous rectification in 24 V input buck or flyback converters up to 40 A continuous current at T_C = 100 °C. Its low Q_g and Q_oss also enable stable operation at 300–1000 kHz.

What is the maximum safe operating temperature for BSZ0910LSATMA1 in continuous operation?

The device is qualified for junction temperature (T_j) up to 150 °C per JEDEC standards. Continuous operation at T_j = 150 °C is permitted when thermal design ensures T_C ≤ 100 °C (ID = 40 A) or T_C ≤ 25 °C (ID = 40 A). Derating curves in the datasheet confirm safe SOA up to 100 µs pulses at 160 A.

Does BSZ0910LSATMA1 require a gate resistor for stability in high-frequency switching?

Yes. While its intrinsic gate resistance is 0.9 Ω, a series gate resistor (typically 1–5 Ω) is required to dampen ringing, control dv/dt, and prevent false turn-on from Miller coupling. The datasheet specifies switching times (e.g., tr = 4.4 ns) measured with R_G,ext = 1.6 Ω, confirming this value as a validated starting point for 500 kHz–1 MHz designs.

Can BSZ0910LSATMA1 be used in parallel configurations for higher current handling?

Yes - its positive R_DS(on) temperature coefficient (R_DS(on) increases with T_j) enables inherent current sharing. Layout best practices include matched gate trace lengths, symmetrical source routing, and shared thermal plane. Parallel operation is validated in Infineon's application notes for multi-phase VRMs and high-power adapters up to 120 A total.

BSZ0910LSATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 37W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8 FL

BSZ0910LSATMA1 FAQ

1.How can I place an order for BSZ0910LSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSZ0910LSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSZ0910LSATMA1 reliable?

The price and inventory of BSZ0910LSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSZ0910LSATMA1 is usually 5 days.

3.What payment methods are accepted for BSZ0910LSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSZ0910LSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSZ0910LSATMA1?

BSZ0910LSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSZ0910LSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSZ0910LSATMA1?

For technical support, including BSZ0910LSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSZ0910LSATMA1 requirements.

6.How does Aetrix verify that BSZ0910LSATMA1 is sourced from the original manufacturer or authorized distributors?

All BSZ0910LSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSZ0910LSATMA1 meets industry standards.

7.What is the process for return or replacement of BSZ0910LSATMA1?

All BSZ0910LSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSZ0910LSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSZ0910LSATMA1 part is unused and in its original packaging.

Return procedure for BSZ0910LSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …