Infineon Technologies BTS247ZE3043AKSA1

Overview

BTS247ZE3043AKSA1 from Infineon Technologies is a Speed TEMPFET® N-channel logic-level power MOSFET with integrated thyristor-based temperature sensor, rated for 55 V V_DS, 18 mΩ R_DS(on) at V_GS = 10 V, and 33 A continuous drain current at T_C = 100 °C; used in automotive load switching with overtemperature protection and analog temperature sensing.

For engineers reviewing the BTS247ZE3043AKSA1 datasheet, BTS247ZE3043AKSA1 pinout, BTS247ZE3043AKSA1 application, or BTS247ZE3043AKSA1 equivalent, key selection criteria include thermal trip accuracy (150–170 °C), fast switching up to 1 MHz, avalanche energy rating (1.3 J), and dual-function pinning (G/A/D/K/S) enabling simultaneous power control and temperature monitoring in space-constrained modules.

Technical Context

This device integrates a high-current N-channel MOSFET and a potential-free thyristor-type temperature sensor on a single die. The sensor operates with forward voltage threshold tracking (V_AK(on) = 0.9–1.4 V), holding current of 0.05–0.5 mA, and thermal trip point tightly specified between 150–170 °C at V_TS = 5 V.

The MOSFET features logic-level gate drive (V_GS(th) = 1.2–2.0 V), low gate charge (Q_g(total) = 60–90 nC), and fast switching (t_r = 30–45 ns, t_f = 20–30 ns), supporting PWM-controlled analog driving and short-circuit protection via sensor-triggered shutdown.

Key Specifications

Pinout & Package

Package: PG-TO220-5-43 - Thermally enhanced 5-pin through-hole package with isolated tab (Drain-connected), optimized for vertical mounting and 6 cm² copper area cooling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar smart power switch applications.

Compared with BTS247Z and IPB180N04S4-02, BTS247ZE3043AKSA1 uniquely combines automotive-grade reliability, precise thermal trip behavior, and integrated sensor latching-enabling single-component thermal protection without added ICs or firmware overhead.

Availability

BTS247ZE3043AKSA1 is available at Aetrix Electronics and suitable for automotive engine control units, electric power steering modules, and body control modules requiring stable component supply, full AEC-Q101 compliance, and traceable manufacturing history.

Supply support for BTS247ZE3043AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

The Speed TEMPFET® product line delivers intelligent power switches combining MOSFETs and monolithic temperature sensors for automotive load protection, targeting applications needing autonomous thermal shutdown without external supervision.

FAQ

What is the thermal trip temperature tolerance of BTS247ZE3043AKSA1?

The thermal trip temperature T_TS(on) is specified from 150 °C to 170 °C at V_TS = 5 V, with typical value 160 °C. This 20 °C window reflects process variation across wafers and ensures robust activation before silicon damage occurs. No calibration is required, and the trip point remains stable over lifetime under AEC-Q101 stress conditions.

Can the temperature sensor be reset without power cycling?

Yes-the thyristor sensor can be reset using a low-voltage pulse (V_AK(reset) ≤ 0.5 V) applied for ≥100 μs between Pins A and K. After reset, V_AK recovers to >4 V within 150 μs. This allows controlled re-enabling of the MOSFET after fault clearance without interrupting main power or gate control signals.

Is BTS247ZE3043AKSA1 compatible with standard TO-220 heatsinks?

Yes-it uses the PG-TO220-5-43 package with an isolated metal tab electrically connected to Drain (Pin 3). Standard TO-220 mounting hardware and insulating pads apply, but thermal design must account for R_thJC = 1.25 K/W and recommended 6 cm² copper area on FR4 PCB for rated 33 A performance.

Does the integrated sensor affect MOSFET switching performance?

No-the temperature sensor operates independently on the A–K terminals and shares no active circuitry with the MOSFET channel. Gate drive, switching waveforms, and R_DS(on) remain unaffected by sensor biasing or latching state. Electrical isolation between sensor and power sections exceeds 1500 V RMS per AEC-Q101 test requirements.