Infineon Technologies BUZ101L

Overview

BUZ101L from Infineon Technologies is an N-channel enhancement-mode SIPMOS® power MOSFET rated for 50 V drain-source voltage, 29 A continuous drain current at TC = 31 °C, and 0.06 Ω maximum RDS(on) at VGS = 5 V and ID = 14.5 A. It features logic-level gate drive compatibility, avalanche energy rating of 70 mJ, and operation up to 175 °C - used in DC-DC converters, motor control stages, and high-reliability industrial power switches.

For engineers reviewing the BUZ101L datasheet, BUZ101L pinout, BUZ101L application, or BUZ101L equivalent, key selection considerations include its 5 V logic-compatible gate threshold (1.2–2.0 V), low thermal resistance (RthJC ≤ 1.5 K/W), robust dv/dt immunity (6 kV/µs), and integrated avalanche-rated body diode with 1.2–2.0 V forward drop at IF = 58 A.

Technical Context

This device employs a planar SIPMOS® process optimized for low on-resistance and fast switching in hard-switched topologies. Its gate threshold voltage (1.2–2.0 V) enables direct drive from microcontrollers and logic ICs without level-shifting circuitry.

The MOSFET supports repetitive unclamped inductive switching (UIS) with EAS = 70 mJ at Tj = 25 °C and exhibits stable RDS(on) over temperature (0.045–0.06 Ω at 25–175 °C), supported by low Crss (100–150 pF) and Ciss (720–960 pF) for reduced gate drive loss.

Key Specifications

Pinout & Package

BUZ101L is housed in a TO-220AB package with standard through-hole mounting and heatsink-compatible tab (Drain-connected). Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STP30NF20 and IRFZ44N, BUZ101L uniquely combines true logic-level operation (VGS(th) ≤2.0 V), 50 V rating matched to 24 V systems, and guaranteed avalanche performance - making it optimal for cost-sensitive, space-constrained, and MCU-driven industrial power stages.

Availability

BUZ101L is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and industrial power distribution requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BUZ101L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

BUZ101L belongs to the SIPMOS® logic-level power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial automation, motor drives, and embedded power systems where simplicity of gate drive and thermal robustness are critical.

FAQ

Is BUZ101L suitable for use with 3.3 V microcontroller GPIOs?

No - while BUZ101L is logic-level, its gate threshold voltage range is 1.2–2.0 V, and full enhancement (RDS(on) ≤0.06 Ω) requires VGS ≥4.5 V per datasheet test conditions. Driving from 3.3 V GPIO risks partial turn-on and excessive conduction loss; a 5 V buffer or level shifter is recommended.

Does BUZ101L have a built-in ESD protection diode on the gate?

No - BUZ101L does not integrate gate ESD protection. The gate oxide is sensitive to electrostatic discharge; external Zener clamping (e.g., 12 V TVS between G and S) and strict handling per JEDEC JS-001 are required during PCB assembly and testing.

Can BUZ101L replace BUZ102L in existing designs?

Not directly - BUZ102L has identical package and pinout but higher VDS (60 V) and slightly higher RDS(on) (0.075 Ω). Substitution is possible only if system voltage remains ≤50 V and thermal margin accommodates increased conduction loss; derating analysis is mandatory before replacement.

What is the maximum safe operating area (SOA) limit at 100 °C case temperature?

At TC = 100 °C, the SOA curve limits continuous DC operation to ~12 A at 25 V or ~6 A at 50 V. For pulsed operation (tp ≤100 µs), the device supports up to 29 A at 50 V with duty cycle ≤1%, per the published SOA graph in Semiconductor Group 5 of the datasheet.