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Infineon Technologies BUZ73AHXKSA1
- Part No.:
- BUZ73AHXKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
BUZ73AHXKSA1.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:11,540
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Product details
Overview
BUZ73AHXKSA1 from Infineon Technologies is an N-channel enhancement-mode SIPMOS power MOSFET rated for 200 V drain-source voltage, 5.5 A continuous drain current at TC = 37 °C, and 0.6 Ω maximum RDS(on) at VGS = 10 V and ID = 4.5 A. It features avalanche-rated ruggedness (EAS = 120 mJ), integrated body diode with 1.3–1.7 V forward voltage, and TO-220-3 package for industrial motor control and DC-DC converter primary-side switching.
For engineers reviewing the BUZ73AHXKSA1 datasheet, BUZ73AHXKSA1 pinout, BUZ73AHXKSA1 application, or BUZ73AHXKSA1 equivalent, key selection criteria include its 200 V V(BR)DSS rating, 0.6 Ω RDS(on), 120 mJ single-pulse avalanche energy, thermal resistance RthJC ≤ 3.1 K/W, and halogen-free PG-TO-220-3 packaging compliant with IEC61249-2-21.
Technical Context
This MOSFET operates in enhancement mode with a gate threshold voltage of 2.1–4.0 V and supports fast switching via low input capacitance (Ciss = 400–530 pF) and short turn-on/turn-off delays (td(on) ≤ 15 ns, td(off) ≤ 75 ns). Its transconductance gfs ranges from 3 to 4.2 S at ID = 4.5 A.
The integrated body diode enables freewheeling in inductive loads, with reverse recovery time trr ≤ 200 ns and Qrr ≤ 0.6 µC under specified conditions (VR = 100 V, IF = IS, diF/dt = 100 A/µs). Thermal performance is characterized by RthJC ≤ 3.1 K/W and safe operating area validated up to 100 V and 10 A for DC and pulsed conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 200 V - supports 170 VAC rectified bus or 100 VDC systems with margin |
| ID (Cont) | 5.5 A at TC = 37 °C - defines heatsink sizing for continuous conduction mode |
| RDS(on) max | 0.6 Ω at VGS = 10 V, ID = 4.5 A - determines conduction loss (P = I²R) at rated load |
| EAS | 120 mJ - enables reliable operation under inductive switching stress without external snubbers |
| Ciss | 400–530 pF - impacts gate drive power and switching speed in hard-switched topologies |
| VGS(th) | 2.1–4.0 V - ensures compatibility with standard 5 V or 10 V logic-level gate drivers |
| trr / Qrr | ≤200 ns / ≤0.6 µC - limits diode recovery losses and EMI in flyback and buck converters |
Pinout & Package
PG-TO-220-3 package with isolated tab (drain-connected), through-hole mounting, and Pb-free/halogen-free construction per IEC61249-2-21.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate (G) | Control terminal; requires ≥10 V drive for full enhancement; sensitive to ESD |
| Pin 2 | Drain (D) | Main high-side current path; electrically connected to metal tab; must be insulated from heatsink unless referenced to system ground |
| Pin 3 | Source (S) | Return path for load current; reference node for gate drive; ties to power ground in low-side configurations |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-rated operation | Guaranteed 120 mJ single-pulse EAS enables robustness against inductive kickback without derating |
| Low RDS(on) temperature coefficient | RDS(on) increases only ~1.9× from 25 °C to 150 °C - maintains predictable conduction loss across operating range |
| Fast switching with low Crss | Crss ≤ 70 pF minimizes Miller effect, enabling stable gate drive in high-frequency SMPS |
| Integrated body diode | Rated for 5.5 A continuous and 22 A pulsed forward current - eliminates need for external freewheeling diode in many topologies |
| Halogen-free construction | Complies with IEC61249-2-21 - meets RoHS and environmental compliance requirements for industrial end equipment |
Applications
| Motor Drive Stage | DC-DC Converter Primary |
|---|---|
Use Scenario: Low-voltage BLDC motor phase switching in HVAC blowers and power tools. IC Role / Device Role / Timing Role: N-channel power switch in 3-phase inverter leg; driven by gate driver IC with 10 V logic level. Use Value: 0.6 Ω RDS(on) limits conduction loss to <1.8 W at 5.5 A, while avalanche rating absorbs back-EMF during commutation. | Use Scenario: Primary-side switch in 24 V input, 300 W isolated flyback converter for industrial PLC power supply. IC Role / Device Role / Timing Role: Hard-switched MOSFET operating at 65 kHz; handles 200 V reflected output voltage plus leakage spikes. Use Value: 120 mJ EAS withstands worst-case leakage energy without failure; Ciss/Coss values support efficient snubberless design. |
| Linear Regulator Pass Element | Overvoltage Protection Switch |
Use Scenario: High-current pass transistor in adjustable linear regulator for test equipment requiring low-noise 12 V @ 4 A output. IC Role / Device Role / Timing Role: Operated in linear region with active thermal management; gate biased to regulate VDS drop. Use Value: RthJC ≤ 3.1 K/W allows direct mounting to heatsink; SOA curve supports 10 A × 10 V = 100 W dissipation for short transients. | Use Scenario: Crowbar-style overvoltage protection in 48 V telecom power distribution unit. IC Role / Device Role / Timing Role: Normally off; triggered into conduction when overvoltage sensed, shorting rail to ground to trip upstream fuse. Use Value: 200 V V(BR)DSS provides margin above 48 V nominal + 100 V surge; 22 A pulsed ID handles fault current until fuse clears. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM20 | 200 V, 20 A, RDS(on) = 0.12 Ω - lower on-resistance but higher gate charge (Qg = 35 nC vs. 28 nC) | Higher current handling; less suitable for thermally constrained layouts due to larger die size | Select when lower conduction loss dominates over switching loss and board space permits larger TO-220 footprint |
| IRF640NPBF | 200 V, 18 A, RDS(on) = 0.18 Ω - higher ID rating but no specified EAS rating in datasheet | Lacks guaranteed avalanche capability; requires external clamping for inductive loads | Prefer where cost sensitivity outweighs ruggedness requirements and circuit includes TVS or RCD snubbers |
Compared with STP20NM20 and IRF640NPBF, BUZ73AHXKSA1 offers superior avalanche ruggedness and tighter RDS(on) tolerance (0.5–0.6 Ω typ/max) at moderate current, making it optimal for compact, unclamped inductive switching where reliability trumps peak efficiency.
Availability
BUZ73AHXKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, isolated DC-DC converters, and overvoltage protection circuits requiring stable component supply and long-term manufacturability.
Supply support for BUZ73AHXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
BUZ73AHXKSA1 belongs to the SIPMOS® family of high-voltage power MOSFETs designed for rugged, high-reliability switching in industrial power conversion and motor control applications.
FAQ
Is BUZ73AHXKSA1 suitable for use in a 100 kHz flyback converter?
Yes - its 15 ns turn-on delay, 60 ns rise time, and 400–530 pF Ciss support efficient operation at 100 kHz. However, gate drive strength must exceed 1 A peak to charge 28 nC Qg within required timing; thermal design must account for increased switching loss at higher frequency.
What is the maximum allowable junction temperature during avalanche testing?
The device is rated for Tj = 150 °C maximum continuous operation. Avalanche testing (EAS = 120 mJ) is specified at Tj = 25 °C, but the SOA curve confirms safe single-pulse operation up to Tj = 150 °C provided pulse duration remains ≤36 µs and duty cycle is negligible.
Does BUZ73AHXKSA1 require a gate resistor for stability?
Yes - a 10–47 Ω series gate resistor is recommended to dampen ringing caused by Crss and PCB inductance. The 70 pF Crss and low gate threshold make it susceptible to oscillation without proper gate control, especially in high-di/dt environments like motor drives.
Can the body diode be used for synchronous rectification?
No - the body diode has VSD = 1.3–1.7 V and trr ≤ 200 ns, resulting in high conduction and recovery losses. It is intended for freewheeling only; synchronous rectification requires a dedicated low-VF Schottky or MOSFET with optimized diode characteristics.
BUZ73AHXKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-220-3
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 600mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 530 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 40W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3-1
BUZ73AHXKSA1 FAQ
1.How can I place an order for BUZ73AHXKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BUZ73AHXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BUZ73AHXKSA1 reliable?
The price and inventory of BUZ73AHXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUZ73AHXKSA1 is usually 5 days.
3.What payment methods are accepted for BUZ73AHXKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUZ73AHXKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BUZ73AHXKSA1?
BUZ73AHXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BUZ73AHXKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BUZ73AHXKSA1?
For technical support, including BUZ73AHXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUZ73AHXKSA1 requirements.
6.How does Aetrix verify that BUZ73AHXKSA1 is sourced from the original manufacturer or authorized distributors?
All BUZ73AHXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUZ73AHXKSA1 meets industry standards.
7.What is the process for return or replacement of BUZ73AHXKSA1?
All BUZ73AHXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BUZ73AHXKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BUZ73AHXKSA1 part is unused and in its original packaging.
Return procedure for BUZ73AHXKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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