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Infineon Technologies BUZ73ALHXKSA1

Part No.:
BUZ73ALHXKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixBUZ73ALHXKSA1.pdf
Description:
MOSFET N-CH 200V 5.5A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,169

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Product details

Overview

BUZ73ALHXKSA1 from Infineon Technologies is an N-channel logic-level SIPMOS power MOSFET rated for 200 V drain-source voltage, 5.5 A continuous drain current at TC = 37 °C, and 0.6 Ω RDS(on) at VGS = 5 V and ID = 3.5 A. It features avalanche-rated ruggedness, integrated body diode with 1.1–1.7 V forward voltage, and TO-220-3 package for industrial motor control and DC-DC converter switching stages.

For engineers reviewing the BUZ73ALHXKSA1 datasheet, BUZ73ALHXKSA1 pinout, BUZ73ALHXKSA1 application, or BUZ73ALHXKSA1 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.2–2.0 V), single-pulse avalanche energy (EAS = 120 mJ), thermal resistance (RthJC ≤ 3.1 K/W), and halogen-free compliance per IEC61249-2-21.

Technical Context

This device operates in enhancement mode with a threshold voltage range of 1.2–2.0 V, enabling direct interface with 3.3 V and 5 V microcontrollers without level-shifting. Its transconductance (gfs = 5–6.5 S) and low input capacitance (Ciss = 630–840 pF) support fast switching in hard-switched topologies up to 100 kHz.

The integrated body diode exhibits trr = 140 ns and Qrr = 0.7 µC under defined conditions (VR = 100 V, IF = IS, diF/dt = 100 A/µs), making it suitable for freewheeling in non-synchronous buck converters and relay drivers where reverse recovery behavior impacts efficiency and EMI.

Key Specifications

ParameterValue and Actual Design Meaning
VDS200 V - supports 170 VAC rectified bus and 120 VDC industrial supplies with margin
ID (cont)5.5 A at TC = 37 °C - delivers 40 W power dissipation with heatsink mounting
RDS(on)0.6 Ω max at VGS = 5 V, ID = 3.5 A - enables <1.5 W conduction loss at 3.5 A
EAS120 mJ - withstands single-pulse inductive energy in relay/snubberless solenoid drives
VGS(th)1.2–2.0 V - ensures reliable turn-on with standard logic-level MCU GPIOs
Ciss840 pF max - limits gate drive power requirement in 50–100 kHz switching
trr / Qrr140 ns / 0.7 µC - defines diode recovery timing for snubber design and EMI filtering

Pinout & Package

PG-TO220-3 package with isolated tab (drain-connected), standard through-hole mounting, and JEDEC-compliant footprint for mechanical robustness and thermal transfer to heatsink.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (G)GateControl terminal; accepts logic-level voltage (≤5 V) for full enhancement
Pin 2 (D)DrainHigh-side switch node; electrically connected to metal tab for heatsinking
Pin 3 (S)SourceReference node for gate drive; common return path for load current

Key Features

FeatureDesign Value
Avalanche-rated operationSingle-pulse EAS = 120 mJ enables unclamped inductive switching without external snubbers
Logic-level gate driveVGS(th) ≤ 2.0 V allows direct drive from 3.3 V/5 V MCUs, reducing BOM count
Halogen-free constructionComplies with IEC61249-2-21, supporting RoHS and green manufacturing requirements
Low RthJC≤3.1 K/W enables >12 W power handling at 100 °C case temperature with minimal derating

Applications

Industrial Motor ControlDC-DC Converter Switch

Use Scenario: Driving 24–48 V brushed DC motors in PLC I/O modules and valve actuators.

IC Role / Device Role / Timing Role: High-side N-channel switch controlling motor direction and PWM speed regulation.

Use Value: Logic-level gate enables direct STM32 GPIO control; avalanche rating absorbs back-EMF during abrupt stop.

Use Scenario: Primary-side switch in 12 V to 5 V non-isolated buck converters for embedded controllers.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in low-frequency (<100 kHz) step-down topology.

Use Value: Low RDS(on) reduces conduction loss; integrated diode eliminates need for external freewheeling diode.

Relay/Solenoid DriverPower Supply Protection

Use Scenario: Solid-state replacement for electromechanical relays in HVAC control panels.

IC Role / Device Role / Timing Role: Load switch managing 12–24 V DC solenoids with inductive kick suppression.

Use Value: EAS = 120 mJ handles repetitive inductive turn-off spikes without clamping diodes.

Use Scenario: Overcurrent protection switch in 24 V industrial power distribution units.

IC Role / Device Role / Timing Role: Current-limiting high-side switch with thermal shutdown coordination.

Use Value: RthJC ≤ 3.1 K/W supports accurate thermal foldback; SOA curve validated to 200 V × 5.5 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP55NF06L60 V VDS, 55 A ID, 0.018 Ω RDS(on); higher current, lower voltage ratingNot suitable for 200 V bus applications; limited to ≤48 V systemsSelect only when operating voltage is ≤48 V and higher current headroom is required
IRFZ44NPBF55 V VDS, 49 A ID, 0.028 Ω RDS(on); no avalanche rating specified in datasheetLacks guaranteed EAS performance; requires external snubber for inductive loadsUse only in resistive or low-energy inductive loads where avalanche stress is absent

Compared with STP55NF06L and IRFZ44NPBF, BUZ73ALHXKSA1 uniquely combines 200 V rating, logic-level gate, and certified 120 mJ avalanche energy-making it the only viable choice for 100–200 V industrial switching with unclamped inductors.

Availability

BUZ73ALHXKSA1 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC converter switching, relay/solenoid driving, and power supply protection requiring stable component supply across multi-year production cycles.

Supply support for BUZ73ALHXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

BUZ73ALHXKSA1 belongs to the SIPMOS® logic-level power MOSFET product line, engineered for rugged, high-reliability switching in industrial automation and power conversion where avalanche tolerance and gate-drive simplicity are critical.

FAQ

Is BUZ73ALHXKSA1 pin-compatible with BUZ73A?

Yes - BUZ73ALHXKSA1 shares identical PG-TO220-3 pinout (G-D-S), same maximum ratings, and enhanced halogen-free construction versus BUZ73A. Electrical parameters including VDS, ID, and RDS(on) are unchanged, enabling drop-in replacement in legacy designs.

What is the maximum safe operating junction temperature?

The absolute maximum junction temperature is +150 °C. Derating begins above TC = 37 °C per the ID vs. TC curve on page 5; sustained operation above 135 °C requires active thermal monitoring and reduced current to maintain reliability.

Does BUZ73ALHXKSA1 require a gate resistor for stability?

A gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 60–90 pF) and PCB trace inductance. Values below 5 Ω risk oscillation; above 100 Ω increases switching losses unnecessarily.

Can BUZ73ALHXKSA1 be used in synchronous rectification?

No - its body diode reverse recovery time (trr = 140 ns) and charge (Qrr = 0.7 µC) are too high for efficient synchronous rectification above ~50 kHz. It is intended for low-frequency switching or freewheeling, not high-frequency SR replacement.

BUZ73ALHXKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
SIPMOS®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V
Rds On (Max) @ Id, Vgs:
600mOhm @ 3.5A, 5V
Vgs(th) (Max) @ Id:
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
840 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
40W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3

BUZ73ALHXKSA1 FAQ

1.How can I place an order for BUZ73ALHXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BUZ73ALHXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BUZ73ALHXKSA1 reliable?

The price and inventory of BUZ73ALHXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BUZ73ALHXKSA1 is usually 5 days.

3.What payment methods are accepted for BUZ73ALHXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BUZ73ALHXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BUZ73ALHXKSA1?

BUZ73ALHXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BUZ73ALHXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BUZ73ALHXKSA1?

For technical support, including BUZ73ALHXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BUZ73ALHXKSA1 requirements.

6.How does Aetrix verify that BUZ73ALHXKSA1 is sourced from the original manufacturer or authorized distributors?

All BUZ73ALHXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BUZ73ALHXKSA1 meets industry standards.

7.What is the process for return or replacement of BUZ73ALHXKSA1?

All BUZ73ALHXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BUZ73ALHXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BUZ73ALHXKSA1 part is unused and in its original packaging.

Return procedure for BUZ73ALHXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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