NXP Semiconductors BZA868AVL,115
- Part No.:
- BZA868AVL,115
- Manufacturer:
- NXP Semiconductors
- Category:
- TVS Diodes
- Package:
- 5-TSSOP, SC-70-5, SOT-353
- Datasheet:
-
BZA868AVL,115.pdf
- Description:
- TVS DIODE 6.8VWM 5TSSOP
- Quantity:
- Payment:

- Shipping:

Inventory:9,169
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Product details
Overview
BZA868AVL,115 from Nexperia is a quadruple low-capacitance ESD suppressor diode array in SOT353 (SC-88A) package, configured with common anode and designed for 4-line I/O protection. It features 6.8 V working voltage (IZ = 1 mA), ≤19 pF diode capacitance at 0 V, ≤11 pF at 5 V, 20 nA reverse leakage at 4.3 V, and 100 Ω differential resistance - enabling high-speed data line protection in USB, HDMI, and audio interfaces.
For engineers reviewing the BZA868AVL,115 datasheet, BZA868AVL,115 pinout, BZA868AVL,115 application, or BZA868AVL,115 equivalent, key selection criteria include ESD clamping performance under IEC 61000-4-2 (≥15 kV contact), low capacitance for signal integrity, common-anode topology for compact routing, and thermal resistance (Rth j-a = 410 K/W) in space-constrained PCB layouts.
Technical Context
The BZA868AVL,115 integrates four monolithic silicon avalanche diodes in a single SOT353 package with shared anode (Pin 2), enabling simultaneous suppression of transients on four independent signal lines. Its low 16–19 pF capacitance at 0 V and reduced 8–11 pF at 5 V ensures minimal signal distortion in high-frequency interfaces up to 500 MHz.
It complies with IEC 61000-4-2 Level 4 (≥15 kV air, ≥8 kV contact) and MIL-STD-883 HBM Class 3 (≥4 kV), delivering clamped voltages below 12 V at 1 A peak transient current. Thermal design relies on low Rth j-s (185 K/W, all diodes loaded) and requires short PCB traces to minimize parasitic inductance-induced voltage overshoot.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Voltage (VZ) | 6.8 V at IZ = 1 mA - defines minimum operating voltage before clamping onset; matches 5 V logic rail protection with margin. |
| Diode Capacitance | 16–19 pF at 0 V / 8–11 pF at 5 V - preserves signal integrity on USB 2.0, HDMI, and audio differential pairs. |
| Reverse Leakage (IR) | 20 nA at VR = 4.3 V - ensures negligible standby power loss in battery-powered peripherals. |
| Differential Resistance (rdif) | 100 Ω max - determines clamping voltage rise per unit transient current (ΔV = I × rdif). |
| ESD Withstand | ≥15 kV contact discharge (IEC 61000-4-2) - exceeds industrial and consumer immunity requirements without external circuitry. |
| Thermal Resistance (Rth j-a) | 410 K/W - sets maximum allowable power dissipation (300 mW at 25 °C ambient) for sustained operation. |
Pinout & Package
SOT353 (SC-88A) 5-lead plastic surface-mount package: 1.35 mm × 1.75 mm footprint, 0.95 mm height, gull-wing leads, JEDEC standard outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode 1 | ESD path for protected signal line 1; connects to I/O trace requiring clamping to common anode. |
| 2 | Common Anode | Shared connection point for all four diodes; must be routed directly to system ground plane with minimal inductance. |
| 3 | Cathode 2 | ESD path for protected signal line 2; electrically isolated from Cathode 1 but shares same clamping threshold. |
| 4 | Cathode 3 | ESD path for protected signal line 3; enables compact 4-line protection without discrete diode arrays. |
| 5 | Cathode 4 | ESD path for protected signal line 4; supports parallel routing of multiple data lanes (e.g., USB D+/D−, I²C SDA/SCL). |
Key Features
| Feature | Design Value |
|---|---|
| Quadruple Common-Anode Topology | Reduces component count by 75% vs. discrete diodes; simplifies layout with single ground return path. |
| Low Capacitance (≤11 pF @ 5 V) | Enables use on 480 Mbps USB 2.0 and 1080p HDMI signals without measurable eye diagram degradation. |
| High ESD Robustness (≥15 kV Contact) | Eliminates need for secondary TVS stages in end-equipment compliance testing. |
| Low Leakage (20 nA @ 4.3 V) | Prevents DC bias shift in precision analog inputs (e.g., audio codec line-in) and extends battery life. |
Applications
| USB 2.0 Interface Protection | HDMI Signal Line Protection |
|---|---|
Use Scenario: Protecting D+ and D− differential pair plus VBUS and ID pins on USB host/device connectors against ESD events during hot-plug insertion. IC Role / Device Role / Timing Role: Quadruple ESD clamp providing bidirectional transient suppression on four independent lines with matched clamping thresholds. Use Value: Maintains USB 2.0 signal integrity (480 Mbps) while meeting IEC 61000-4-2 Level 4 compliance without degrading rise/fall times. | Use Scenario: Shielding TMDS clock and data channels (CLK+, CLK−, DATA0+, DATA0−) in HDMI source/sink devices from handling-induced ESD. IC Role / Device Role / Timing Role: Low-capacitance quad suppressor placed at HDMI connector to clamp transients before reaching serializer/deserializer ICs. Use Value: Prevents pixel corruption and link dropouts by limiting clamped voltage to <12 V at 1 A, preserving HDMI 1.4 timing margins. |
| Audio Codec Line-In Protection | Industrial I/O Module Protection |
Use Scenario: Safeguarding stereo analog input paths (left/right channels + ground reference + bias supply) in portable audio recorders and DAC/ADC interfaces. IC Role / Device Role / Timing Role: Four-channel ESD suppressor with common anode tied to audio ground, minimizing crosstalk between channels. Use Value: 20 nA leakage prevents DC offset errors in 24-bit audio converters; 19 pF capacitance avoids high-frequency roll-off above 20 kHz. | Use Scenario: Protecting RS-485/RS-422 differential data lines (A/B), enable, and fault indicator pins on programmable logic controller (PLC) I/O modules exposed to factory floor ESD. IC Role / Device Role / Timing Role: Quad suppressor deployed at field-wire entry points to shunt transients before isolation barriers and transceivers. Use Value: 100 Ω differential resistance ensures clamping voltage stays below RS-485 receiver common-mode range (−7 V to +12 V) during 8 kV contact discharge. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESDR05-4 | Higher capacitance (22 pF @ 0 V); 5.5 V working voltage; SOT23-6 package. | Designed for lower-voltage 3.3 V systems; less suitable for 5 V bus protection due to lower VZ. | Select when protecting 3.3 V GPIO or SDIO lines where tighter VZ tolerance is required. |
| TPD4E001DBVR | Lower capacitance (0.7 pF typical); 5.5 V VZ; higher ESD rating (±15 kV IEC); SOT-23-6. | Optimized for ultra-high-speed interfaces (USB 3.0, PCIe); not pin-compatible; requires separate ground connections per channel. | Choose for >1 Gbps serial links where sub-1 pF capacitance is mandatory; avoid for cost-sensitive 480 Mbps designs. |
Compared with ESDR05-4 and TPD4E001DBVR, the BZA868AVL,115 offers optimal balance of 6.8 V clamping threshold, 16–19 pF capacitance, and common-anode SOT353 layout efficiency - making it ideal for 5 V USB 2.0, HDMI, and industrial RS-485 protection where board space and signal fidelity are constrained.
Availability
BZA868AVL,115 is available at Aetrix Electronics and suitable for USB 2.0 interface protection, HDMI signal line protection, and industrial I/O module protection requiring stable component supply across production lifecycles.
Supply support for BZA868AVL,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in high-performance discrete, logic, and PowerMOS semiconductors, serving automotive, industrial, computing, and consumer markets with scalable, reliable components.
The BZA800AVL series was engineered specifically for compact, multi-line ESD protection in space-constrained digital interfaces - emphasizing low capacitance, precise clamping, and robust IEC 61000-4-2 compliance without sacrificing manufacturability.
FAQ
What is the working voltage of the BZA868AVL,115 and how is it defined?
The BZA868AVL,115 has a working voltage (VZ) of 6.8 V, specified at test current IZ = 1 mA. This value represents the nominal DC voltage at which the diode begins to conduct significantly in reverse bias, defining the threshold above which ESD clamping activates. The datasheet guarantees a range of 6.46 V to 7.14 V under these conditions, ensuring compatibility with 5 V logic rails while maintaining margin against false triggering.
Does the BZA868AVL,115 support IEC 61000-4-2 Level 4 ESD protection?
Yes, the BZA868AVL,115 is rated for ≥15 kV contact discharge per IEC 61000-4-2, exceeding Level 4 requirements (8 kV contact / 15 kV air). This specification is verified through standardized testing with the 150 pF/330 Ω network, and the device maintains clamped voltages below 12 V at 1 A transient current - confirming its suitability for end-equipment certification in consumer and industrial applications.
What is the diode capacitance of the BZA868AVL,115 at operating bias?
The BZA868AVL,115 exhibits 16–19 pF capacitance at 0 V reverse bias and 8–11 pF at 5 V reverse bias, measured at 1 MHz. These values are critical for high-speed interfaces: the lower capacitance at operational bias minimizes loading on 480 Mbps USB 2.0 or 74.25 MHz HDMI TMDS lines, preserving signal edge rates and reducing jitter-induced bit errors in the BZA868AVL,115's target applications.
How is the common anode configuration implemented in the BZA868AVL,115 package?
The BZA868AVL,115 uses Pin 2 as the common anode terminal, with Pins 1, 3, 4, and 5 serving as individual cathodes for four independent ESD protection paths. This configuration allows all four diodes to share a single low-inductance ground connection, reducing PCB routing complexity and eliminating mismatched ground paths that could degrade clamping symmetry - a key advantage over discrete or dual-diode alternatives in the BZA868AVL,115 implementation.
What thermal limitations apply to continuous operation of the BZA868AVL,115?
The BZA868AVL,115 has a total power dissipation limit of 300 mW at 25 °C ambient, with thermal resistance from junction to ambient (Rth j-a) of 410 K/W. Derating is required above 25 °C per the published curve (Fig.5), reaching ~150 mW at 70 °C. Continuous forward current is limited to 200 mA per diode, and non-repetitive peak reverse power is capped at 6 W for 1 ms pulses - parameters that define safe operating area during both steady-state and transient conditions for the BZA868AVL,115.
BZA868AVL,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Package/Case:
- 5-TSSOP, SC-70-5, SOT-353
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 4
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 6.8V
- Voltage - Breakdown (Min):
- -
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 6W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 180pF @ 1MHz
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-353
BZA868AVL,115 FAQ
1.How can I place an order for BZA868AVL,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BZA868AVL,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BZA868AVL,115 reliable?
The price and inventory of BZA868AVL,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZA868AVL,115 is usually 5 days.
3.What payment methods are accepted for BZA868AVL,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BZA868AVL,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BZA868AVL,115?
BZA868AVL,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BZA868AVL,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BZA868AVL,115?
For technical support, including BZA868AVL,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BZA868AVL,115 requirements.
6.How does Aetrix verify that BZA868AVL,115 is sourced from the original manufacturer or authorized distributors?
All BZA868AVL,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZA868AVL,115 meets industry standards.
7.What is the process for return or replacement of BZA868AVL,115?
All BZA868AVL,115 units undergo pre-shipment inspection (PSI). If there is an issue with BZA868AVL,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BZA868AVL,115 part is unused and in its original packaging.
Return procedure for BZA868AVL,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BZA868AVL,115 Tags

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ESD9B5.0ST5G
onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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onsemi

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Diodes Incorporated

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D5V0P1B2LP-7B
Diodes Incorporated

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Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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PESD2V0Y1BSFYL
Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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