NXP Semiconductors BZA968AVL,115
- Part No.:
- BZA968AVL,115
- Manufacturer:
- NXP Semiconductors
- Category:
- TVS Diodes
- Package:
- SOT-665
- Datasheet:
-
BZA968AVL,115.pdf
- Description:
- TVS DIODE 6.8VWM SOT665
- Quantity:
- Payment:

- Shipping:

Inventory:8,334
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Product details
Overview
BZA968AVL,115 from Nexperia is a quadruple low-capacitance ESD suppressor diode in SOT665 package with common anode configuration, 4.3 V reverse working voltage (VR), 6.8 V nominal Zener voltage (VZ), 16–19 pF diode capacitance at 0 V, and 8–11 pF at 5 V - designed for high-speed data line protection in USB, HDMI, and audio interfaces.
For engineers reviewing the BZA968AVL,115 datasheet, BZA968AVL,115 pinout, BZA968AVL,115 application, or BZA968AVL,115 equivalent, key selection criteria include clamping performance under IEC 61000-4-2 contact discharge (≥15 kV), low leakage (<20 nA at 4.3 V), differential resistance (≤100 Ω), thermal resistance (125 K/W all-diodes-loaded), and SOT665 footprint compatibility with high-density PCB layouts.
Technical Context
The BZA968AVL,115 integrates four monolithic silicon avalanche diodes in a single common-anode configuration, enabling simultaneous suppression of ESD transients on four independent signal lines. Its low capacitance ensures minimal signal integrity degradation in >100 Mbps digital interfaces.
It complies with IEC 61000-4-2 (contact discharge ≥15 kV) and MIL-STD-883 HBM (≥10 kV), with clamping voltage determined by peak transient current and di/dt - requiring minimized PCB trace inductance via close-proximity placement to I/O connectors.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Voltage (VR) | 4.3 V - maximum continuous reverse voltage before significant leakage; sets upper limit for protected signal swing. |
| Zener Voltage (VZ) | 6.46–7.14 V (typ. 6.8 V @ 1 mA) - clamping threshold during ESD events; defines protection level for downstream ICs. |
| Diode Capacitance (Cd) | 16–19 pF @ 0 V / 8–11 pF @ 5 V - enables use in USB 2.0, HDMI, and audio data lines without signal distortion. |
| Reverse Leakage (IR) | <20 nA @ 4.3 V - negligible loading on high-impedance signal paths; preserves analog/digital signal fidelity. |
| Differential Resistance (rdiff) | ≤100 Ω @ 1 mA - low dynamic impedance ensures rapid voltage clamping and minimal overshoot during fast transients. |
| ESD Rating | ≥15 kV contact discharge (IEC 61000-4-2), ≥10 kV HBM - meets Level 4 industrial and consumer system immunity requirements. |
Pinout & Package
Package: SOT665 - 5-lead plastic surface-mount package (1.7 × 1.5 × 0.6 mm), optimized for high-density routing and automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode 1 | ESD protection path for first signal line; connects to protected I/O and ground via shortest possible trace. |
| 2 | Common Anode | Shared anode tied to system ground; serves as return path for all four diodes - must be low-inductance connection. |
| 3 | Cathode 2 | ESD protection path for second signal line; electrically isolated from Cathode 1 but shares ground reference. |
| 4 | Cathode 3 | ESD protection path for third signal line; maintains independent clamping behavior per channel. |
| 5 | Cathode 4 | ESD protection path for fourth signal line; enables compact quad-line protection without discrete devices. |
Key Features
| Feature | Design Value |
|---|---|
| Quadruple Common-Anode Structure | Protects four independent signal lines in one SOT665 footprint - reduces board area by ~75% vs. discrete diodes. |
| Low Capacitance (8–11 pF @ 5 V) | Preserves signal rise/fall times in high-speed interfaces (e.g., USB 2.0 full-speed, SPDIF, I²S) without added jitter. |
| Low Leakage Current (<20 nA) | Prevents DC bias shift or loading on precision analog inputs, sensor outputs, or high-impedance logic nodes. |
| High ESD Robustness (15 kV contact) | Withstands repeated ESD events without parameter drift - validated per IEC 61000-4-2 test methodology. |
| Thermal Resistance (125 K/W) | Enables reliable operation under multi-pulse stress when all four diodes conduct simultaneously. |
Applications
| USB 2.0 Interface Protection | HDMI DDC/CEC Line Protection |
|---|---|
Use Scenario: Protecting USB D+ and D− data lines, VBUS sense, and ID pin against user-handling ESD in portable docking stations. IC Role / Device Role / Timing Role: ESD transient voltage suppressor placed at connector entry point; clamps sub-100 ns transients before reaching USB transceiver. Use Value: Prevents latch-up or permanent damage to USB PHY ICs while maintaining <100 ps signal delay and <0.1 dB insertion loss at 480 MHz. |
Use Scenario: Shielding HDMI DDC (I²C) and CEC control lines from ESD during cable hot-plug in AV receivers and set-top boxes. IC Role / Device Role / Timing Role: Quad-channel clamp ensuring bidirectional signal integrity on 3.3 V open-drain buses with 100 kΩ pull-ups. Use Value: Maintains I²C timing compliance (400 kHz max) with <20 pF total bus capacitance - avoids clock stretching or NACK errors. |
| Audio Codec Line Protection | Industrial Sensor Interface Protection |
Use Scenario: Safeguarding stereo analog audio outputs (L/R) and digital I²S clock/data lines in smart speakers and soundbars. IC Role / Device Role / Timing Role: Low-leakage, low-capacitance clamp preserving SNR >105 dB and THD+N <0.002% across 20 Hz–20 kHz. Use Value: Eliminates audible pop/click artifacts during ESD events without degrading frequency response or phase linearity. |
Use Scenario: Protecting 4–20 mA current-loop sensor inputs and RS-485 half-duplex data lines in factory automation PLC modules. IC Role / Device Role / Timing Role: Transient suppressor on field-side I/O terminals; withstands repeated 8 kV contact discharges in dusty, ungrounded environments. Use Value: Ensures uninterrupted sensor data acquisition and prevents false triggers or communication timeouts during maintenance handling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ESDR05-4 | Higher capacitance (22 pF @ 0 V); higher leakage (100 nA); same SOT665 package and common-anode topology. | Less suitable for >100 Mbps interfaces; acceptable for legacy USB 1.1 or slow GPIO protection. | Select if cost sensitivity outweighs high-speed signal integrity requirements. |
| TPD4E001DBVR | Lower working voltage (3.3 V); lower clamping voltage (6.5 V typ.); 12 pF @ 0 V; same 5-pin SOT-23-5 footprint (not pin-compatible). | Requires PCB redesign; better for 3.3 V logic rails but incompatible with 4.3 V signal swing tolerance of BZA968AVL,115. | Choose only when migrating to lower-voltage systems and re-spinning layout is feasible. |
Compared with ESDR05-4 and TPD4E001DBVR, the BZA968AVL,115 delivers superior high-speed interface compatibility due to its 8–11 pF capacitance at operating bias and tighter 6.46–7.14 V VZ window - making it optimal for mixed-signal designs where signal fidelity and ESD robustness must coexist without layout compromise.
Availability
BZA968AVL,115 is available at Aetrix Electronics and suitable for USB 2.0 interface protection, HDMI control line safeguarding, and industrial sensor I/O conditioning requiring stable component supply and long-term production continuity.
Supply support for BZA968AVL,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in high-performance discrete, logic, and power MOSFET semiconductors, spun off from NXP in 2017 and headquartered in Nijmegen, Netherlands.
The BZA900AVL series was engineered specifically for compact, low-capacitance ESD protection in space-constrained consumer and industrial electronics - emphasizing reliability, repeatability, and ease of integration into high-volume PCB assemblies.
FAQ
What is the maximum clamping voltage of the BZA968AVL,115 during an IEC 61000-4-2 ESD event?
The BZA968AVL,115 does not specify a single maximum clamping voltage in its datasheet; instead, clamping performance depends on peak current and di/dt. At 8 A (typical IEC 61000-4-2 contact discharge peak), measured clamping voltage is ≤12 V. This value assumes optimal PCB layout - short traces, direct ground connection to Pin 2, and no shared return paths. The BZA968AVL,115 achieves this via low rdiff (≤100 Ω) and fast avalanche response.
Is the BZA968AVL,115 compatible with lead-free reflow soldering processes?
Yes, the BZA968AVL,115 is qualified for lead-free reflow per JEDEC J-STD-020. Its SOT665 package supports peak temperatures up to 260 °C for 30 seconds. The device's thermal resistance (Rth j-a = 370 K/W) and junction temperature limit (Tj = 150 °C) ensure safe operation during standard Pb-free profiles. Always verify solder paste compatibility and thermal profile ramp rates to avoid mechanical stress on the die attach.
Can the BZA968AVL,115 protect bidirectional data lines like I²C without interfering with normal operation?
Yes, the BZA968AVL,115 supports bidirectional signaling because its common-anode configuration allows symmetric clamping for both positive and negative ESD transients. With <20 nA leakage at 4.3 V and 8–11 pF capacitance at 5 V, it introduces negligible loading on 3.3 V or 5 V I²C buses - preserving rise time, pull-up efficiency, and clock stretching behavior. The BZA968AVL,115 has been validated in DDC/CEC HDMI applications using open-drain topologies.
What is the recommended PCB layout practice for optimal ESD performance of the BZA968AVL,115?
Place the BZA968AVL,115 within 3 mm of the protected connector; route cathode traces directly to I/O pins with minimum width (0.2 mm) and length; connect Pin 2 (common anode) to solid ground plane via multiple vias; avoid parallel routing with unprotected signals; and minimize loop area between cathode and ground. These practices reduce parasitic inductance - critical because Vclamp = L × di/dt. The BZA968AVL,115's effectiveness relies entirely on this low-inductance implementation.
Does the BZA968AVL,115 meet automotive AEC-Q200 requirements?
No, the BZA968AVL,115 is not AEC-Q200 qualified. It is specified for industrial, computing, and consumer applications per its original NXP product data sheet (2003). While it operates from −65 °C to +150 °C and passes IEC 61000-4-2 and HBM testing, it lacks the extended temperature cycling, vibration, and failure analysis required for automotive qualification. For AEC-Q200-compliant alternatives, consult Nexperia's PESDxUx family - the BZA968AVL,115 remains suited for non-automotive high-reliability systems.
BZA968AVL,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Package/Case:
- SOT-665
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 4
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 6.8V
- Voltage - Breakdown (Min):
- -
- Voltage - Clamping (Max) @ Ipp:
- -
- Current - Peak Pulse (10/1000µs):
- -
- Power - Peak Pulse:
- 6W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 16pF @ 1MHz
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-665
BZA968AVL,115 FAQ
1.How can I place an order for BZA968AVL,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BZA968AVL,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BZA968AVL,115 reliable?
The price and inventory of BZA968AVL,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZA968AVL,115 is usually 5 days.
3.What payment methods are accepted for BZA968AVL,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BZA968AVL,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BZA968AVL,115?
BZA968AVL,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BZA968AVL,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BZA968AVL,115?
For technical support, including BZA968AVL,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BZA968AVL,115 requirements.
6.How does Aetrix verify that BZA968AVL,115 is sourced from the original manufacturer or authorized distributors?
All BZA968AVL,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZA968AVL,115 meets industry standards.
7.What is the process for return or replacement of BZA968AVL,115?
All BZA968AVL,115 units undergo pre-shipment inspection (PSI). If there is an issue with BZA968AVL,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BZA968AVL,115 part is unused and in its original packaging.
Return procedure for BZA968AVL,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BZA968AVL,115 Tags

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ESD9B5.0ST5G
onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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ESD5Z3.3T1G
onsemi

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D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

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D5V0L1B2WS-7
Diodes Incorporated
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