Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay BZD27B12P-HE3_A18

Part No.:
BZD27B12P-HE3_A18
Manufacturer:
Vishay
Category:
TVS Diodes
Package:
DO-219AB
Datasheet:
AetrixBZD27B12P-HE3_A18.pdf
Description:
ZENER DIODE SMF DO219AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,255

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BZD27B12P-HE3_A18 from Vishay Semiconductors is a surface-mount, AEC-Q101 qualified Zener diode with nominal breakdown voltage of 12 V (±2 %), 50 mA test current, 150 W peak surge power rating, and DO-219AB (SMF) package. It delivers stable voltage regulation and transient overvoltage protection in automotive power rails and industrial DC supply monitoring circuits.

For engineers reviewing the BZD27B12P-HE3_A18 datasheet, BZD27B12P-HE3_A18 pinout, BZD27B12P-HE3_A18 application, or BZD27B12P-HE3_A18 equivalent, key selection criteria include its ±2 % VZ tolerance, 8.8 V clamping voltage at 16 A surge, -65 °C to +175 °C operating range, and MSL level 1 reflow compatibility - all critical for high-reliability automotive ECU and ADAS sensor interface designs.

Technical Context

This unidirectional Zener diode operates in reverse-bias breakdown mode to regulate or clamp voltage. Its design integrates low dynamic impedance (9.1 Ω typical at 50 mA) and a positive temperature coefficient (+0.05 to +0.1 %/°C) for predictable thermal drift in series-regulated or overvoltage-protection configurations.

The device meets AEC-Q101 qualification for automotive use and supports wave and reflow soldering per J-STD-020 (peak 260 °C). Its 150 W non-repetitive peak surge power (10/1000 μs waveform) and 300 W (100 μs square pulse) enable robust transient suppression without derating in compact PCB layouts.

Key Specifications

ParameterValue and Actual Design Meaning
VZ Nominal12 V ±2 % - ensures precise voltage reference within 240 mV tolerance for feedback loops and threshold detection
IZT50 mA - standard test current defining Zener voltage; aligns with typical biasing in low-power regulator circuits
VC @ IRSM16 V at 16 A - clamping voltage during 10/1000 μs surge, limiting downstream voltage stress in load-dump scenarios
PRSM150 W - peak surge power handling enables single-device protection against ISO 7637-2 Pulse 5a transients
TJ max175 °C - junction temperature rating supports operation in under-hood automotive environments without thermal shutdown
PackageDO-219AB (SMF) - 2.7 × 3.5 mm low-profile SMD footprint compatible with automated assembly and high-density routing
ESD RatingHBM > 8 kV - withstands electrostatic discharge during handling and board-level integration without degradation

Pinout & Package

DO-219AB (SMF) package: 2-terminal surface-mount device with cathode marked by band on top surface; dimensions 2.7 mm × 3.5 mm × 1.08 mm; MSL level 1, reflow-compatible up to 260 °C peak.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward conduction terminal / Surge current return pathConnected to ground or low-impedance return in clamping configuration; carries full surge current during transient events
CathodeZener breakdown terminal / Voltage reference nodeConnected to protected rail; defines regulated output voltage and serves as sensing point for feedback networks

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive applications including engine control, body electronics, and ADAS modules per stress-test requirements
±2 % VZ toleranceEnables accurate voltage setting without external trimming; reduces calibration overhead in production test
150 W peak surge power (10/1000 μs)Meets ISO 7637-2 Pulse 5a immunity requirements for 12 V vehicle systems without external TVS stacking
MSL level 1 ratingAllows unlimited floor life and single-reflow processing without baking, simplifying manufacturing logistics
Low dynamic impedance (9.1 Ω)Minimizes voltage deviation under varying load current, improving regulation stability in precision references

Applications

Automotive Power Rail ProtectionIndustrial Sensor Signal Conditioning

Use Scenario: Protecting microcontroller I/O and CAN transceiver power inputs from load dump and jump-start transients in 12 V vehicle electrical systems.

IC Role / Device Role / Timing Role: Unidirectional voltage clamp placed between VCC and ground, conducting only during overvoltage events above 12 V.

Use Value: Limits rail voltage to ≤16 V during 150 W surges, preventing latch-up or permanent damage to downstream ICs without adding series resistance or delay.

Use Scenario: Stabilizing reference voltage for analog-to-digital conversion in industrial pressure and temperature sensors operating from unregulated 24 V DC supplies.

IC Role / Device Role / Timing Role: Shunt regulator providing fixed 12 V reference to op-amp bias networks and ADC reference dividers.

Use Value: Delivers ±2 % accuracy and <1 % thermal drift over -40 °C to +125 °C, enabling sub-12-bit measurement repeatability without active regulation.

DC-DC Converter Feedback ProtectionMotor Drive Gate Driver Clamp

Use Scenario: Safeguarding optocoupler or error amplifier inputs in isolated flyback converters subject to output overvoltage faults.

IC Role / Device Role / Timing Role: Zener clamp across feedback resistor divider to prevent erroneous regulation signals during fault conditions.

Use Value: Activates at 12 V with 9.1 Ω dynamic impedance, holding feedback node within safe input range of TL431 or similar comparators during sustained overvoltage.

Use Scenario: Clamping gate-source voltage spikes on N-channel MOSFETs in H-bridge motor drivers exposed to inductive kickback.

IC Role / Device Role / Timing Role: Fast-response shunt device connected between gate and source to suppress VGS overshoot beyond 12 V rating.

Use Value: Responds within nanoseconds to limit VGS to 12.24 V max, preventing gate oxide breakdown while maintaining drive integrity during PWM switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMBJ12ATVS diode with 12.2 V standoff, 19.9 V clamping, 600 W peak power - higher clamping voltage, lower VBR tolerance (±5 %)Designed for system-level ESD/surge protection rather than precision regulation; lacks tight VZ toleranceSelect when primary need is high-energy transient suppression, not stable voltage reference
BZX84-C12SOT-23 Zener with 12 V ±5 %, 300 mW PD, no AEC-Q101 qualification - smaller package but lower surge capability and thermal ratingTargeted at consumer-grade portable electronics; unsuitable for automotive under-hood or industrial high-temp environmentsSelect only for space-constrained, non-automotive applications where 150 W surge immunity is unnecessary

Compared with SMBJ12A and BZX84-C12, the BZD27B12P-HE3_A18 uniquely combines AEC-Q101 qualification, ±2 % VZ tolerance, and 150 W surge rating in a thermally robust DO-219AB package - making it the only option suitable for automotive power rail regulation requiring both precision and ruggedness.

Availability

BZD27B12P-HE3_A18 is available at Aetrix Electronics and suitable for automotive ECUs, industrial sensor interfaces, and DC-DC converter feedback networks requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.

Supply support for BZD27B12P-HE3_A18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Semiconductors is a global manufacturer of discrete semiconductors and passive components, specializing in high-reliability devices for automotive, industrial, and computing markets.

The BZD27B Series targets automotive-grade voltage regulation and transient protection, designed specifically to meet AEC-Q101 requirements while delivering tight Zener tolerance and high surge resilience in compact surface-mount packages.

FAQ

What is the Zener voltage tolerance for BZD27B12P-HE3_A18?

The BZD27B12P-HE3_A18 has a nominal Zener voltage of 12 V with a guaranteed tolerance of ±2 %, corresponding to a range of 11.76 V to 12.24 V at 50 mA test current. This tight tolerance is specified per the BZD27B Series datasheet Rev. 2.1 and enables precise voltage referencing in automotive and industrial feedback circuits without external calibration.

Is BZD27B12P-HE3_A18 qualified for automotive applications?

Yes, BZD27B12P-HE3_A18 is AEC-Q101 qualified, as indicated by the "-HE3" suffix in its ordering code. It meets the full stress-test requirements for automotive discrete semiconductors, including temperature cycling, humidity testing, and mechanical shock - making it suitable for under-hood and chassis-mounted electronic control units.

What is the maximum clamping voltage of BZD27B12P-HE3_A18 during surge events?

The BZD27B12P-HE3_A18 exhibits a maximum clamping voltage (VC) of 16 V at 16 A peak surge current (10/1000 μs waveform), per the Electrical Characteristics table on page 3 of the datasheet. This value defines the upper voltage limit imposed on protected circuits during standardized load-dump transients.

Which package does BZD27B12P-HE3_A18 use, and what are its key mechanical features?

BZD27B12P-HE3_A18 uses the DO-219AB (SMF) package: a low-profile surface-mount case measuring 2.7 mm × 3.5 mm × 1.08 mm with cathode identification via molded band. It complies with MSL level 1 per J-STD-020 and supports reflow soldering up to 260 °C peak temperature without preconditioning.

Does BZD27B12P-HE3_A18 have ESD protection capability?

Yes, BZD27B12P-HE3_A18 is rated for ESD immunity per AEC-Q101: human body model > 8 kV and machine model > 800 V. This ensures robustness against electrostatic discharge during handling, PCB assembly, and field operation in automotive and industrial environments.

BZD27B12P-HE3_A18 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay
Package/Case:
DO-219AB
Series:
BZD27B, eSMP®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
10V (Max)
Voltage - Breakdown (Min):
11.76V
Voltage - Clamping (Max) @ Ipp:
16V
Current - Peak Pulse (10/1000µs):
8.8A
Power - Peak Pulse:
150W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 175°C (TA)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-219AB (SMF)

BZD27B12P-HE3_A18 FAQ

1.How can I place an order for BZD27B12P-HE3_A18 through Aetrix?

Please submit a Request for Quotation (RFQ) for BZD27B12P-HE3_A18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BZD27B12P-HE3_A18 reliable?

The price and inventory of BZD27B12P-HE3_A18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BZD27B12P-HE3_A18 is usually 5 days.

3.What payment methods are accepted for BZD27B12P-HE3_A18?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BZD27B12P-HE3_A18 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BZD27B12P-HE3_A18?

BZD27B12P-HE3_A18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BZD27B12P-HE3_A18 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BZD27B12P-HE3_A18?

For technical support, including BZD27B12P-HE3_A18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BZD27B12P-HE3_A18 requirements.

6.How does Aetrix verify that BZD27B12P-HE3_A18 is sourced from the original manufacturer or authorized distributors?

All BZD27B12P-HE3_A18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BZD27B12P-HE3_A18 meets industry standards.

7.What is the process for return or replacement of BZD27B12P-HE3_A18?

All BZD27B12P-HE3_A18 units undergo pre-shipment inspection (PSI). If there is an issue with BZD27B12P-HE3_A18, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BZD27B12P-HE3_A18 part is unused and in its original packaging.

Return procedure for BZD27B12P-HE3_A18:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BZD27B12P-HE3_A18 Tags

  • BZD27B12P-HE3_A18
  • BZD27B12P-HE3_A18 PDF
  • BZD27B12P-HE3_A18 Datasheet
  • BZD27B12P-HE3_A18 Specifications
  • BZD27B12P-HE3_A18 Images
  • Vishay
  • Vishay BZD27B12P-HE3_A18
  • Buy BZD27B12P-HE3_A18
  • BZD27B12P-HE3_A18 Price
  • BZD27B12P-HE3_A18 Distributor
  • BZD27B12P-HE3_A18 Supplier
  • BZD27B12P-HE3_A18 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER