Vishay BZD27B6V8P-HM3_A08

Overview

BZD27B6V8P-HM3_A08 from Vishay Semiconductors is a surface-mount silicon planar Zener diode with nominal 6.8 V breakdown voltage (±2 % tolerance), 100 mA test current, and 150 W non-repetitive peak surge power rating (10/1000 μs waveform). It operates across -65 °C to +175 °C and serves as a precision voltage reference or transient voltage suppressor in automotive power supply rails and industrial sensor interfaces.

For engineers reviewing the BZD27B6V8P-HM3_A08 datasheet, BZD27B6V8P-HM3_A08 pinout, BZD27B6V8P-HM3_A08 application, or BZD27B6V8P-HM3_A08 equivalent, key selection criteria include its AEC-Q101 qualification, ±2 % V_Z tolerance at 100 mA, 3 Ω dynamic resistance, 0 to +0.07 %/°C temperature coefficient, and DO-219AB (SMF) package compatibility with reflow soldering.

Technical Context

This unidirectional Zener diode uses a single-junction silicon planar construction optimized for stable voltage regulation and high-energy transient clamping. Its design supports both regulator-mode operation (IZT = 100 mA, VZ = 6.66–6.94 V) and protection-mode use (VC = 10.9 V at IRSM = 13.3 A, 10/1000 μs pulse).

Thermal performance is defined by R_thJL = 30 K/W and R_thJA = 180 K/W on 3 mm × 3 mm Cu pads, enabling reliable operation up to TJ = 175 °C. It meets MSL level 1 per J-STD-020 (peak 260 °C) and JESD 201 Class 2 whisker testing.

Key Specifications

Pinout & Package

DO-219AB (SMF) package: 2.7–2.9 mm length, 1.7–1.9 mm width, 0.8–1.2 mm height, cathode marked with band. RoHS-compliant, halogen-free molding compound (UL 94 V-0).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with BZD27B6V8P-HM3_A08, BZD27C6V8P-M3-08 trades precision and automotive qualification for lower cost, while SMBJ6.8A offers superior surge handling but lacks regulation capability-making BZD27B6V8P-HM3_A08 uniquely suited for dual-role applications requiring both stable reference and robust clamping.

Availability

BZD27B6V8P-HM3_A08 is available at Aetrix Electronics and suitable for automotive ECU protection, industrial sensor biasing, and telecom DC-DC feedback networks requiring stable component supply, AEC-Q101 validation, and tight voltage tolerance.

Supply support for BZD27B6V8P-HM3_A08 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Semiconductors designs discrete semiconductors for high-reliability industrial, automotive, and computing applications, emphasizing ruggedness, precision, and long-term supply stability.

The BZD27B-M Series targets applications demanding both precise voltage regulation and high-energy transient suppression-especially where AEC-Q101 qualification, low-profile packaging, and wide temperature operation are mandatory.

FAQ

What is the Zener voltage tolerance of BZD27B6V8P-HM3_A08?

BZD27B6V8P-HM3_A08 has a Zener voltage tolerance of ±2 % at 100 mA test current, with a specified range of 6.66 V to 6.94 V. This tight tolerance is confirmed in the Vishay BZD27B-M Series datasheet (Rev. 1.6, Table on page 2) and enables high-accuracy voltage references without external trimming. The BZD27B6V8P-HM3_A08 achieves this via process-controlled silicon planar junction fabrication.

Is BZD27B6V8P-HM3_A08 qualified for automotive applications?

Yes, BZD27B6V8P-HM3_A08 is AEC-Q101 qualified, as indicated by the "HM3" suffix in its ordering code. It meets stress tests including temperature cycling, humidity bias, and mechanical shock per AEC-Q101 Rev D. The BZD27B6V8P-HM3_A08 is explicitly designated for automotive use in the Vishay datasheet's Ordering Information table and Features section.

What is the maximum clamping voltage of BZD27B6V8P-HM3_A08 under surge conditions?

The maximum clamping voltage (V_C) of BZD27B6V8P-HM3_A08 is 10.9 V at I_RSM = 13.3 A for a 10/1000 μs waveform, per the Electrical Characteristics table on page 3 of the Vishay datasheet. This value defines the upper voltage limit during transient suppression and is critical for ensuring downstream ICs remain within absolute maximum ratings. The BZD27B6V8P-HM3_A08 maintains this clamping performance across its full operating temperature range.

Which package does BZD27B6V8P-HM3_A08 use, and what are its key dimensions?

BZD27B6V8P-HM3_A08 uses the DO-219AB (SMF) package: 2.7–2.9 mm length, 1.7–1.9 mm width, and 0.8–1.2 mm height, with cathode identified by a band. Package dimensions are documented in Figure on page 5 of the Vishay datasheet. The BZD27B6V8P-HM3_A08's low-profile SMF outline enables high-density PCB layouts and compatibility with standard 8 mm tape-and-reel automated placement.

Does BZD27B6V8P-HM3_A08 have a specified temperature coefficient?

Yes, BZD27B6V8P-HM3_A08 has a temperature coefficient (αV_Z) of 0 to +0.07 %/°C at I_ZT = 100 mA, per the Electrical Characteristics table on page 2 of the Vishay datasheet. This near-zero TC ensures minimal drift in regulated voltage over temperature-critical for precision analog circuits. The BZD27B6V8P-HM3_A08 achieves this stability through optimized doping and junction geometry in its silicon planar structure.