My Inquiry
My Account
Diodes Incorporated D2V8F4U8MR-13
- Part No.:
- D2V8F4U8MR-13
- Manufacturer:
- Diodes Incorporated
- Category:
- TVS Diodes
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
D2V8F4U8MR-13.pdf
- Description:
- DATALINE PROTECTION PP SO-8 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:5,486
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
D2V8F4U8MR from Diodes Incorporated is a quad-channel ESD protection diode array in SO-8 package, designed for bidirectional transient suppression on high-speed data lines. It delivers 2.8 V reverse standoff voltage, 3.0 V punch-through voltage, 2.6 pF typical channel capacitance, ±8 kV contact/±15 kV air ESD rating per IEC 61000-4-2, and clamps to ≤5 V at 1 A for Ethernet PHY interface protection.
For engineers reviewing the D2V8F4U8MR datasheet, D2V8F4U8MR pinout, D2V8F4U8MR application, or D2V8F4U8MR equivalent, key selection criteria include low-capacitance line protection (≤3 pF), dual-pair (four-line) layout compatibility, IEC 61000-4-5 Level 2 lightning surge capability (24 A, 8/20 µs), and SO-8 footprint suitability for 10/100/1000BASE-T routing density constraints.
Technical Context
This device implements four independent, back-to-back silicon avalanche diode pairs in a single SO-8 package, enabling simultaneous protection of two differential pairs (e.g., TX+/TX− and RX+/RX−). Each channel features low dynamic capacitance (2.6 pF @ 0 V, 1 MHz) and snap-back behavior with 2.8 V snap-back voltage at 50 mA.
It operates within −55 °C to +125 °C junction temperature range, supports 80 A peak pulse current (8/20 µs), and achieves 600 W peak pulse power dissipation under standardized surge conditions. Thermal resistance is 54.26 °C/W (junction-to-ambient, FR-4 board).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Standoff Voltage | 2.8 V - Maximum continuous operating voltage before conduction begins |
| Punch-Through Voltage | 3.0 V - Threshold at which diode enters low-impedance clamping mode (IPT = 2 µA) |
| Clamping Voltage (1 A) | ≤5 V - Maximum voltage seen by protected IC during 1 A ESD event (8/20 µs) |
| Channel Capacitance | 2.6 pF - Ensures minimal signal integrity degradation on 1000BASE-T differential lines |
| ESD Rating (IEC 61000-4-2) | ±8 kV contact / ±15 kV air - Meets Level 4 immunity for industrial and telecom equipment |
| Lightning Surge Rating | 24 A (8/20 µs) - Complies with IEC 61000-4-5 Level 2 for WAN/LAN port survivability |
| Peak Pulse Power | 600 W - Sustains short-duration transients without thermal runaway on FR-4 PCB |
Pinout & Package
Package: SO-8, surface-mount, lead-free, halogen-free molded plastic (UL 94V-0), 0.08 g mass, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode of Channel 1 | Connects to first high-speed line (e.g., TX+); clamps positive transients to VCC |
| 2 | Cathode of Channel 1 | Connects to ground reference; conducts negative transients to GND |
| 3 | Anode of Channel 2 | Protects second line (e.g., TX−); paired with Pin 2 for differential clamping |
| 4 | Cathode of Channel 2 | Shared ground return path; enables low-inductance layout for pair 1 |
| 5 | Anode of Channel 3 | Protects third line (e.g., RX+); electrically isolated from Pins 1–4 |
| 6 | Cathode of Channel 3 | Ground connection for pair 2; decoupled from Pins 2/4 to minimize crosstalk |
| 7 | Anode of Channel 4 | Protects fourth line (e.g., RX−); completes dual-differential protection set |
| 8 | Cathode of Channel 4 | Dedicated ground terminal; supports independent return paths for noise-sensitive applications |
Key Features
| Feature | Design Value |
|---|---|
| Four-line bidirectional protection | Enables full-duplex 1000BASE-T interface safeguarding without external bias or direction control |
| 2.6 pF typical capacitance per channel | Preserves signal rise/fall times and eye diagram integrity up to 125 MHz signaling |
| Low 2.8 V snap-back voltage | Reduces stress on downstream PHY ICs during fast-rising ESD events (tr < 1 ns) |
| IEC 61000-4-5 Level 2 compliance | Validated for 24 A lightning-induced surges on Ethernet ports in non-lightning-prone zones |
| SO-8 footprint with thermal pad compatibility | Supports standard reflow profiles and allows optional copper pour under package for enhanced thermal relief |
Applications
| 10/100/1000BASE-T Ethernet PHY | WAN/LAN Edge Router Ports |
|---|---|
Use Scenario: Protecting RJ-45 magnetics interface on enterprise switch ASICs against ESD during plugging/unplugging. IC Role / Device Role / Timing Role: Bidirectional transient voltage suppressor placed between magnetics center-taps and PHY pins. Use Value: Prevents latch-up or gate oxide damage in 2.5 V/3.3 V PHY receivers while maintaining <0.1 dB insertion loss at 100 MHz. | Use Scenario: Shielding copper-based DSL/WAN ports from cable discharge events in residential gateways. IC Role / Device Role / Timing Role: Line-side ESD clamp mounted directly at connector entry point. Use Value: Limits voltage excursion to ≤5 V during ±8 kV contact discharge, avoiding PHY reset or packet corruption. |
| Industrial Ethernet I/O Modules | 5G Small Cell Baseband Units |
Use Scenario: Securing fieldbus interfaces (e.g., PROFINET) in factory automation controllers exposed to maintenance personnel ESD. IC Role / Device Role / Timing Role: Primary-level protection on twisted-pair differential lanes before TVS secondary stage. Use Value: Survives repeated ±15 kV air discharge without parameter shift, ensuring >10-year field reliability. | Use Scenario: Guarding SFP+ cage signal traces in fronthaul units handling CPRI/eCPRI over copper. IC Role / Device Role / Timing Role: Low-capacitance front-end clamp minimizing jitter accumulation on 3.125 Gbps links. Use Value: Adds <0.02 UI jitter at 2.5 Gbaud while meeting GR-1089-CORE lightning immunity requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SP1006-04UTG | Higher 3.5 pF capacitance; 3.3 V standoff; ±12 kV air ESD rating | Better suited for lower-speed USB 2.0 or RS-485 where capacitance margin is relaxed | Select when cost sensitivity outweighs 1000BASE-T signal integrity requirements |
| SZ1.8SMF28A-TP | Single-channel, 28 V standoff; 100 W PPP; no multi-line integration | Requires four discrete devices and additional PCB area; lacks differential pair optimization | Choose only if SO-8 footprint is unavailable or legacy design reuse mandates discrete placement |
Compared with SP1006-04UTG and SZ1.8SMF28A-TP, D2V8F4U8MR provides superior high-speed interface compatibility via its 2.6 pF capacitance and integrated dual-pair layout, reduces BOM count by 75% versus discrete solutions, and delivers tighter clamping (≤5 V @ 1 A) critical for 2.5 V PHY rail margins.
Availability
D2V8F4U8MR is available at Aetrix Electronics and suitable for 10/100/1000BASE-T Ethernet PHY protection, WAN/LAN edge router ports, and industrial Ethernet I/O modules requiring stable component supply across multi-year production cycles.
Supply support for D2V8F4U8MR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This device belongs to Diodes' ESD Protection Diodes product line, engineered specifically for high-fidelity signal line protection in wired communications infrastructure where low capacitance, precise clamping, and multi-line integration are mandatory.
FAQ
What is the maximum operating temperature for D2V8F4U8MR?
The D2V8F4U8MR has a specified operating junction temperature range of −55 °C to +125 °C. Its thermal resistance (RθJA) is 54.26 °C/W when mounted on a standard FR-4 PCB with Diodes' recommended pad layout. Derating is required above 25 °C ambient to maintain safe junction temperatures under 80 A pulse conditions.
Does D2V8F4U8MR require external bias or control signals?
No. D2V8F4U8MR is a passive, bidirectional ESD protection array with no external bias, enable pins, or control logic. It operates solely through avalanche breakdown and snap-back conduction, making it compatible with unpowered or hot-plug scenarios common in Ethernet and telecom interfaces.
Can D2V8F4U8MR be used for USB 3.0 SuperSpeed differential pairs?
No. While its 2.6 pF capacitance meets USB 2.0 requirements, USB 3.0 SuperSpeed (5 Gbps) demands ≤0.3 pF per line to avoid excessive insertion loss and return loss degradation. D2V8F4U8MR's capacitance is too high for Gen 1/Gen 2 compliance and may cause eye closure beyond 1 GHz.
Is D2V8F4U8MR qualified for automotive applications?
No. D2V8F4U8MR is not AEC-Q200 qualified. Diodes offers automotive-grade equivalents (e.g., D2V8F4U8MQ) with Q-suffix marking, PPAP documentation, and IATF 16949 manufacturing certification. This part is intended for commercial/industrial use only.
D2V8F4U8MR-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 4
- Voltage - Reverse Standoff (Typ):
- 2.8V (Max)
- Voltage - Breakdown (Min):
- 3V
- Voltage - Clamping (Max) @ Ipp:
- 17V
- Current - Peak Pulse (10/1000µs):
- 80A (8/20µs)
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Ethernet
- Capacitance @ Frequency:
- 2.6pF @ 1MHz
- Operating Temperature:
- -55°C ~ 125°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
D2V8F4U8MR-13 FAQ
1.How can I place an order for D2V8F4U8MR-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for D2V8F4U8MR-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for D2V8F4U8MR-13 reliable?
The price and inventory of D2V8F4U8MR-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for D2V8F4U8MR-13 is usually 5 days.
3.What payment methods are accepted for D2V8F4U8MR-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for D2V8F4U8MR-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for D2V8F4U8MR-13?
D2V8F4U8MR-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your D2V8F4U8MR-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for D2V8F4U8MR-13?
For technical support, including D2V8F4U8MR-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your D2V8F4U8MR-13 requirements.
6.How does Aetrix verify that D2V8F4U8MR-13 is sourced from the original manufacturer or authorized distributors?
All D2V8F4U8MR-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that D2V8F4U8MR-13 meets industry standards.
7.What is the process for return or replacement of D2V8F4U8MR-13?
All D2V8F4U8MR-13 units undergo pre-shipment inspection (PSI). If there is an issue with D2V8F4U8MR-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The D2V8F4U8MR-13 part is unused and in its original packaging.
Return procedure for D2V8F4U8MR-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
D2V8F4U8MR-13 Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
