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Diodes Incorporated D3V3F4U8MR
- Part No.:
- D3V3F4U8MR
- Manufacturer:
- Diodes Incorporated
- Category:
- TVS Diodes
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
D3V3F4U8MR.pdf
- Description:
- DATALINEPROTECTIONPPSO-8T&R2.5K
- Quantity:
- Payment:
- Shipping:
Inventory:2,151
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Product details
Overview
D3V3F4U8MR from Diodes Incorporated is a quad-channel unidirectional ESD protection diode array in SO-8 package, rated for 3.3V reverse standoff voltage, 80A peak pulse current (8/20µs), and 2.1pF typical channel capacitance, designed to safeguard high-speed Ethernet and LAN data lines against ±15kV air/±8kV contact ESD per IEC 61000-4-2.
For engineers reviewing the D3V3F4U8MR datasheet, D3V3F4U8MR pinout, D3V3F4U8MR application, or D3V3F4U8MR equivalent, key selection criteria include low-clamp voltage (≤20V at 80A), sub-3pF capacitance for signal integrity on 10/100 Ethernet interfaces, dual-pair (four-line) protection architecture, and compliance with IEC 61000-4-5 Level 3 lightning surge (48A).
Technical Context
This device implements a snap-back silicon avalanche structure with 3.3V punch-through voltage and 3.3V snap-back voltage, enabling fast turn-on during transients while maintaining low leakage (<1µA at 3.3V). Its four-channel layout protects two differential pairs-each channel independently clamps positive transients to ≤5V at 1A and ≤20V at 80A.
The SO-8 package supports thermal dissipation up to 500mW with RθJA = 56.5°C/W on FR-4 PCB, and its 2.1pF channel capacitance ensures minimal signal distortion on 100Mbps interfaces. It meets IEC 61000-4-2 Level 4 and IEC 61000-4-5 Level 3 without external series impedance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Standoff Voltage | 3.3 V - Maximum continuous operating voltage before conduction begins; sets upper limit for normal signal swing in 3.3V I/O systems. |
| Punch-Through Voltage | 3.6 V - Voltage at which device initiates avalanche breakdown; ensures reliable triggering before system-level damage occurs. |
| Clamping Voltage (80A) | 20 V - Maximum voltage seen by protected IC during 8/20µs 80A surge; limits stress on downstream PHY or MAC interface. |
| Channel Capacitance | 2.1 pF - Measured at 0V, 1MHz; enables use on 10/100 Ethernet without significant rise-time degradation or jitter. |
| ESD Rating (Contact) | ±8 kV - Complies with IEC 61000-4-2 Level 4; qualifies for industrial and telecom equipment requiring robust human-body-model immunity. |
| Peak Pulse Power | 1000 W - Sustained for 8/20µs waveform; supports repeated lightning-surge events per IEC 61000-4-5 Level 3. |
Pinout & Package
SO-8 package: surface-mount, 8-pin small-outline integrated circuit with matte tin-plated copper leadframe, moisture sensitivity level 1, UL 94V-0 molding compound, and 0.08g mass.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode of Channel 1 | Connects to first high-speed data line (e.g., TX+); clamps positive transients to VCL. |
| 2 | Cathode of Channel 1 | Common cathode tied to 3.3V rail or ground plane; defines reference for clamping action. |
| 3 | Anode of Channel 2 | Connects to second data line (e.g., TX−); provides differential pair protection with Pin 1. |
| 4 | Cathode of Channel 2 | Shared cathode node; enables compact dual-pair layout without discrete cathode routing. |
| 5 | Anode of Channel 3 | Connects to third line (e.g., RX+); completes four-line coverage for full 10/100 Ethernet interface. |
| 6 | Cathode of Channel 3 | Common cathode shared across all channels; simplifies PCB grounding and reduces loop inductance. |
| 7 | Anode of Channel 4 | Connects to fourth line (e.g., RX−); enables simultaneous protection of both differential pairs. |
| 8 | Cathode of Channel 4 | Same node as Pins 2, 4, and 6; single-point cathode connection minimizes voltage overshoot during multi-line surges. |
Key Features
| Feature | Design Value |
|---|---|
| Four-line ESD protection | Single SO-8 device protects two full differential pairs (TX+/TX−, RX+/RX−), eliminating need for four discrete diodes and reducing BOM count by 75%. |
| Sub-3pF channel capacitance | 2.1pF typical value preserves signal integrity on 100Mbps Ethernet links, avoiding eye-diagram closure or timing margin loss. |
| Low clamping voltage | Clamps to ≤5V at 1A and ≤20V at 80A, ensuring protected PHY ICs remain within absolute maximum ratings during worst-case surges. |
| IEC 61000-4-5 Level 3 compliance | Withstands 48A (8/20µs) lightning-induced surges-validated without external series impedance-reducing design complexity and board space. |
Applications
| 10/100 Ethernet PHY Interface | WAN/LAN Switching Systems |
|---|---|
Use Scenario: Protecting RJ-45 Ethernet ports on managed switches handling bidirectional 100Mbps traffic under field-deployed ESD stress. IC Role / Device Role / Timing Role: ESD transient suppressor placed directly at connector entry point, clamping fast-rising ESD pulses before they reach the PHY IC's I/O pins. Use Value: Prevents latch-up or gate oxide damage in Ethernet PHYs by limiting transient voltage to ≤20V during 80A surges, preserving link reliability over 10+ year deployments. | Use Scenario: Shielding internal backplane data lanes between switch ASICs and front-panel PHY modules in carrier-grade LAN infrastructure. IC Role / Device Role / Timing Role: Low-capacitance transient suppressor on differential pairs carrying auto-negotiated 10/100BASE-TX signals with <1ns edge rates. Use Value: Maintains signal fidelity with only 2.1pF loading per line, avoiding intersymbol interference and ensuring >30dB return loss up to 60MHz. |
| Desktop/Server LAN Controllers | Wireless Base Station Backhaul |
Use Scenario: Hardening onboard Gigabit-capable controllers (e.g., Intel i210) against operator-induced ESD during server rack maintenance. IC Role / Device Role / Timing Role: Primary ESD guard for MDI-X interface traces routed from MAC to magnetics, positioned before common-mode chokes. Use Value: Achieves ±15kV air/±8kV contact ESD immunity without degrading 100BASE-TX rise time (≤30ns), meeting EN 61000-6-2 industrial immunity requirements. | Use Scenario: Securing Ethernet-based fronthaul and OAM interfaces in outdoor macro base stations exposed to lightning-prone environments. IC Role / Device Role / Timing Role: Dual-stage protector: first stage for ESD (IEC 61000-4-2), second stage for lightning (IEC 61000-4-5 Level 3) on 10/100 control links. Use Value: Handles 48A 8/20µs surges without failure, enabling single-device compliance with Telcordia GR-1089-CORE Section 4.5.2.2 for NEBS Level 3 environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SZ1.8SMAT3G | Lower VRWM (1.8V), higher CT (12pF), unidirectional single-channel in SOD-123. | Not suitable for 3.3V 10/100 Ethernet due to excessive capacitance and voltage mismatch. | Select only for 1.8V logic rails with lower speed interfaces (e.g., I²C). |
| TPD4E001DPWR | 3.3V VRWM, 0.6pF CT, quad-channel in X2SON-8, but rated only to 4A IPP (8/20µs). | Limited to consumer-grade USB or display interfaces; insufficient for telecom lightning surge (IEC 61000-4-5 Level 3). | Prefer for ultra-high-speed (>1Gbps) low-power applications where surge current is not a concern. |
Compared with SZ1.8SMAT3G and TPD4E001DPWR, D3V3F4U8MR uniquely balances 3.3V compatibility, 2.1pF capacitance, and 80A surge capability-making it the only option qualified for industrial 10/100 Ethernet with combined IEC 61000-4-2 Level 4 and IEC 61000-4-5 Level 3 compliance in a single SO-8 footprint.
Availability
D3V3F4U8MR is available at Aetrix Electronics and suitable for 10/100 Ethernet PHY interfaces, WAN/LAN switching systems, and desktop/server LAN controllers requiring stable component supply, long-term lifecycle support, and RoHS-compliant green packaging.
Supply support for D3V3F4U8MR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with ISO 9001- and IATF 16949-certified facilities supporting automotive, industrial, and computing markets.
D3V3F4U8MR belongs to Diodes' Transient Voltage Suppressor (TVS) Diode Arrays product line, engineered specifically for high-speed data line protection in telecom, networking, and enterprise infrastructure where low capacitance and high surge robustness are co-required.
FAQ
What is the maximum operating temperature range for D3V3F4U8MR?
The D3V3F4U8MR operates reliably from −55°C to +125°C junction temperature, validated per JEDEC JESD22-A104. This range supports deployment in uncontrolled environments such as outdoor base stations and industrial server racks where ambient temperatures exceed 85°C.
Does D3V3F4U8MR require external series impedance for IEC 61000-4-5 compliance?
No. D3V3F4U8MR achieves IEC 61000-4-5 Level 3 (48A, 8/20µs) compliance without any external series resistor or inductor. Its 1000W peak pulse power rating and low dynamic impedance enable direct placement at the connector, simplifying layout and reducing bill-of-materials cost.
How does the snap-back behavior affect clamping performance?
The device exhibits snap-back at 3.3V with holding voltage below 3.3V, enabling rapid transition from high-impedance standby to low-impedance clamping state. This reduces clamping voltage overshoot during fast transients (e.g., ESD rise time <1ns), improving protection margin for sensitive 3.3V PHY inputs.
Is D3V3F4U8MR qualified for automotive applications?
D3V3F4U8MR is not AEC-Q200 qualified. While Diodes offers automotive-grade variants (e.g., D3V3F4U8MRAQ), this standard part is intended for industrial, telecom, and computing applications. For automotive use, contact Diodes' automotive team for PPAP-capable, IATF 16949-manufactured alternatives.
D3V3F4U8MR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 4
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- -
- Voltage - Clamping (Max) @ Ipp:
- 20V
- Current - Peak Pulse (10/1000µs):
- 80A (8/20µs)
- Power - Peak Pulse:
- 1000W (1kW)
- Power Line Protection:
- Yes
- Applications:
- Ethernet
- Capacitance @ Frequency:
- 2.1pF @ 1MHz
- Operating Temperature:
- -55°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
D3V3F4U8MR FAQ
1.How can I place an order for D3V3F4U8MR through Aetrix?
Please submit a Request for Quotation (RFQ) for D3V3F4U8MR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for D3V3F4U8MR reliable?
The price and inventory of D3V3F4U8MR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for D3V3F4U8MR is usually 5 days.
3.What payment methods are accepted for D3V3F4U8MR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for D3V3F4U8MR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for D3V3F4U8MR?
D3V3F4U8MR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your D3V3F4U8MR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for D3V3F4U8MR?
For technical support, including D3V3F4U8MR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your D3V3F4U8MR requirements.
6.How does Aetrix verify that D3V3F4U8MR is sourced from the original manufacturer or authorized distributors?
All D3V3F4U8MR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that D3V3F4U8MR meets industry standards.
7.What is the process for return or replacement of D3V3F4U8MR?
All D3V3F4U8MR units undergo pre-shipment inspection (PSI). If there is an issue with D3V3F4U8MR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The D3V3F4U8MR part is unused and in its original packaging.
Return procedure for D3V3F4U8MR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
D3V3F4U8MR Tags
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Diodes Incorporated
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