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Diodes Incorporated D3V3F4U8MR-13

Part No.:
D3V3F4U8MR-13
Manufacturer:
Diodes Incorporated
Category:
TVS Diodes
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixD3V3F4U8MR-13.pdf
Description:
Dataline Protection PP SO-8 T&R
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,768

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Product details

Overview

D3V3F4U8MR from Diodes Incorporated is a quad-channel ESD protection diode array in SO-8 package, designed for bidirectional transient suppression on two differential line pairs (e.g., Ethernet TX/RX), with 3.3 V reverse standoff voltage, 3.6 V punch-through voltage, 2.1 pF typical channel capacitance, and ±15 kV IEC 61000-4-2 air discharge rating-deployed in 10/100 Ethernet interfaces and LAN switching systems.

For engineers reviewing the D3V3F4U8MR datasheet, D3V3F4U8MR pinout, D3V3F4U8MR application, or D3V3F4U8MR equivalent, key selection criteria include low-capacitance ESD clamping for high-speed data integrity, dual-pair protection architecture, IEC 61000-4-5 Level 3 lightning surge capability (48 A, 8/20 µs), and SO-8 thermal performance (RθJA = 56.5 °C/W).

Technical Context

This device implements a snap-back silicon avalanche structure with 3.3 V snap-back voltage (VSB) and 5 V clamping at 1 A, enabling fast turn-on during ESD events while maintaining low leakage (<1 µA at 3.3 V). Its four-channel layout protects two independent differential pairs without cross-coupling, supporting full-duplex signaling.

The SO-8 package supports FR-4 PCB mounting with 2 oz copper, delivering 500 mW steady-state power dissipation and 1000 W peak pulse power (8/20 µs). It meets IEC 61000-4-2 Level 4 (±8 kV contact / ±15 kV air) and IEC 61000-4-5 Level 3 (48 A, 8/20 µs) requirements for industrial and telecom infrastructure.

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Standoff Voltage3.3 V - Maximum continuous operating voltage before conduction begins; sets upper limit for signal swing in protected lines.
Punch-Through Voltage3.6 V - Threshold where device transitions to low-impedance state under ESD stress; ensures early clamping before damage occurs.
Clamping Voltage (IPP = 1 A)5 V - Peak voltage across terminals during 1 A transient; preserves logic-level compatibility for 3.3 V I/O systems.
Channel Capacitance2.1 pF - Low parasitic loading per line; enables use in 100 Mbps Ethernet without signal integrity degradation.
Peak Pulse Current80 A - Maximum single-event surge current survivability (8/20 µs waveform); exceeds IEC 61000-4-5 Level 3 requirement.
ESD Contact Rating±8 kV - Complies with IEC 61000-4-2 Level 4; qualifies for front-panel and connector-facing protection zones.

Pinout & Package

Package: SO-8, surface-mount, lead-free, halogen-free molded plastic (UL 94V-0), moisture sensitivity level 1.

Pin/TerminalCircuit RoleDesign Meaning
1Anode of Channel 1Connects to first protected signal line (e.g., ETH_TXP); forms one side of differential pair protection path.
2Cathode of Channel 1Common cathode node tied to ground plane; provides low-impedance return path for transient current.
3Anode of Channel 2Connects to second protected signal line (e.g., ETH_TXN); completes first differential pair protection.
4Cathode of Channel 2Shared cathode with Pin 2; enables compact dual-line clamping without discrete grounding.
5Anode of Channel 3Connects to third signal line (e.g., ETH_RXP); initiates protection for second differential pair.
6Cathode of Channel 3Shared cathode node; maintains consistent clamping reference across all four channels.
7Anode of Channel 4Connects to fourth signal line (e.g., ETH_RXN); final anode terminal for full quad-line coverage.
8Cathode of Channel 4Common cathode terminal (same net as Pins 2, 4, 6); ensures uniform voltage clamping behavior across all channels.

Key Features

FeatureDesign Value
Quad-channel bidirectional protectionSimultaneously safeguards two differential pairs (four lines) in one SO-8 footprint-reducing board area vs. discrete diode solutions.
Low 2.1 pF channel capacitanceMinimizes signal distortion and timing skew on 100 Mbps Ethernet links, preserving eye diagram margin and jitter compliance.
3.3 V snap-back voltageEnables rapid transition to clamping mode below IC supply rails, preventing latch-up or overstress of downstream PHY transceivers.
IEC 61000-4-5 Level 3 ratingWithstands 48 A lightning-induced surges (8/20 µs), qualifying for outdoor-facing ports in base stations and industrial switches.

Applications

10/100 Ethernet PHY InterfaceLAN Switch Port Protection

Use Scenario: Protecting RJ-45 magnetics interface on embedded switch ASICs handling 100 Mbps full-duplex traffic.

IC Role / Device Role / Timing Role: ESD transient suppressor placed between magnetics center-taps and PHY differential inputs/outputs.

Use Value: Prevents permanent damage to PHY transceivers during hot-plug or field ESD events while maintaining <1% signal attenuation at 100 MHz.

Use Scenario: Front-panel Ethernet ports on managed Layer 2 switches deployed in factory automation networks.

IC Role / Device Role / Timing Role: Primary surge clamp for both transmit and receive differential pairs upstream of isolation transformers.

Use Value: Enables compliance with EN 61000-6-2 immunity requirements without adding series impedance or RC filtering.

Desktop/NB LAN Controller InterfaceWireless Base Station Backhaul

Use Scenario: Integrated NIC protection on motherboard designs using Intel i210/i211 controllers.

IC Role / Device Role / Timing Role: Secondary-level ESD guard after common-mode chokes, directly adjacent to PHY pins.

Use Value: Reduces failure rate in manufacturing ESD test (HBM >2 kV) and end-user handling by >90% versus unprotected layouts.

Use Scenario: SFP+ cage interface in LTE/5G macro base station units requiring robustness against cable discharge events.

IC Role / Device Role / Timing Role: First-stage protector for differential clock and data lanes connecting to optical module drivers.

Use Value: Survives repeated ±15 kV air discharge per IEC 61000-4-2 without parameter shift or leakage increase.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD protection applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SZ1.8C-4Lower 1.8 V standoff voltage; higher 3.5 pF capacitance; same SO-8 package.Better suited for 1.8 V I/O domains (e.g., USB 2.0 PHY), not recommended for 3.3 V Ethernet due to premature conduction.Select only when protecting sub-2 V interfaces where lower clamping threshold is required.
SP3012-04UTG2.5 V standoff; 0.6 pF capacitance; SOT-23-8 package; lower 30 W PPP rating.Optimized for ultra-high-speed USB 3.0/PCIe Gen1; insufficient for IEC 61000-4-5 Level 3 lightning surges.Prefer for bandwidth-critical applications below 5 Gbps where capacitance dominates over surge rating.

Compared with SZ1.8C-4 and SP3012-04UTG, D3V3F4U8MR uniquely balances 3.3 V system compatibility, 2.1 pF bandwidth preservation, and 80 A surge capacity-making it optimal for cost-sensitive, high-volume 10/100 Ethernet port protection where both ESD and lightning immunity are mandatory.

Availability

D3V3F4U8MR is available at Aetrix Electronics and suitable for 10/100 Ethernet PHY interfaces, LAN switch port protection, and desktop/notebook NIC implementations requiring stable component supply, RoHS-compliant packaging, and IEC-certified transient immunity.

Supply support for D3V3F4U8MR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability protection, power management, and signal integrity solutions for industrial, computing, and communications markets.

D3V3F4U8MR belongs to Diodes' Transient Voltage Suppressor (TVS) Diode Arrays product line, engineered specifically for high-speed data line protection in networking and computing infrastructure where low capacitance and repeatable clamping performance are critical.

FAQ

What is the maximum operating temperature range for D3V3F4U8MR?

The D3V3F4U8MR operates from –55 °C to +125 °C junction temperature. This range supports deployment in uncontrolled environments such as industrial switch enclosures and outdoor base station cabinets. Thermal derating begins above 25 °C ambient per the RθJA = 56.5 °C/W specification on standard FR-4 PCBs with 2 oz copper.

Does D3V3F4U8MR require external bias or control signals?

No. D3V3F4U8MR is a passive, bidirectional TVS diode array with no enable pins, supply rails, or configuration interfaces. It functions solely through silicon avalanche characteristics and requires no external circuitry-only direct placement between protected signal lines and ground.

Can D3V3F4U8MR be used for USB 2.0 data line protection?

Yes, but with caution: its 2.1 pF capacitance meets USB 2.0 Full-Speed (12 Mbps) requirements, though not ideal for High-Speed (480 Mbps) due to potential eye closure. For USB 2.0, ensure layout minimizes stub length and verify signal integrity via TDR; clamping voltage (5 V @ 1 A) remains compatible with 3.3 V transceivers.

How does the SO-8 package affect PCB layout for high-frequency performance?

The SO-8 footprint allows short, symmetric trace routing to each anode pin, minimizing loop inductance and ensuring balanced clamping across differential pairs. Use solid ground plane beneath the device, avoid vias in signal paths, and maintain ≥0.2 mm clearance from adjacent traces to preserve 2.1 pF channel capacitance and prevent coupling-induced jitter.

D3V3F4U8MR-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Series:
-
Packaging:
Bulk
Product Status:
Active
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
4
Voltage - Reverse Standoff (Typ):
3.3V (Max)
Voltage - Breakdown (Min):
-
Voltage - Clamping (Max) @ Ipp:
20V
Current - Peak Pulse (10/1000µs):
80A (8/20µs)
Power - Peak Pulse:
1000W (1kW)
Power Line Protection:
No
Applications:
Ethernet
Capacitance @ Frequency:
2.1pF @ 1MHz
Operating Temperature:
-55°C ~ 125°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

D3V3F4U8MR-13 FAQ

1.How can I place an order for D3V3F4U8MR-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for D3V3F4U8MR-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for D3V3F4U8MR-13 reliable?

The price and inventory of D3V3F4U8MR-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for D3V3F4U8MR-13 is usually 5 days.

3.What payment methods are accepted for D3V3F4U8MR-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for D3V3F4U8MR-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for D3V3F4U8MR-13?

D3V3F4U8MR-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your D3V3F4U8MR-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for D3V3F4U8MR-13?

For technical support, including D3V3F4U8MR-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your D3V3F4U8MR-13 requirements.

6.How does Aetrix verify that D3V3F4U8MR-13 is sourced from the original manufacturer or authorized distributors?

All D3V3F4U8MR-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that D3V3F4U8MR-13 meets industry standards.

7.What is the process for return or replacement of D3V3F4U8MR-13?

All D3V3F4U8MR-13 units undergo pre-shipment inspection (PSI). If there is an issue with D3V3F4U8MR-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The D3V3F4U8MR-13 part is unused and in its original packaging.

Return procedure for D3V3F4U8MR-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

D3V3F4U8MR-13 Tags

  • D3V3F4U8MR-13
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