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Diodes Incorporated D3V3H1U2LP-7B
- Part No.:
- D3V3H1U2LP-7B
- Manufacturer:
- Diodes Incorporated
- Category:
- TVS Diodes
- Package:
- 0402 (1006 Metric)
- Datasheet:
-
D3V3H1U2LP-7B.pdf
- Description:
- TVS DIODE 3.3VWM 10VC DFN1006-2
- Quantity:
- Payment:
- Shipping:
Inventory:32,796
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Product details
Overview
D3V3H1U2LP-7B from Diodes Incorporated is a unidirectional transient voltage suppression (TVS) diode designed for ESD protection of high-speed data lines in portable electronics. It features a 3.3V reverse working voltage, 4.0V minimum breakdown voltage, 7.5V clamping voltage at 5A, 280pF junction capacitance, and ±30kV IEC 61000-4-2 contact/air discharge rating - deployed in cellular handset USB and audio interfaces.
For engineers reviewing the D3V3H1U2LP-7B datasheet, D3V3H1U2LP-7B pinout, D3V3H1U2LP-7B application, or D3V3H1U2LP-7B equivalent, key selection criteria include low clamping voltage under 35A surge, sub-300pF signal-line capacitance, ultra-small DFN1006 footprint, and AEC-Q200-readiness for portable industrial edge devices.
Technical Context
This TVS operates as a single-channel, cathode-anode configured unidirectional clamp, triggered when reverse voltage exceeds 4.0V (VBR(MIN)). Its low 280pF capacitance ensures minimal signal distortion on 100Mbps+ interfaces like USB 2.0 and I²S.
The device uses silicon avalanche structure with NiPdAu-plated copper leadframe for stable ESD response across -65°C to +150°C. Thermal resistance (RθJA) is 500°C/W on standard FR-4, limiting continuous power dissipation to 250mW but sustaining 350W peak pulse (8/20μs) at TA = 25°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Working Voltage | 3.3V - Maximum steady-state voltage before conduction; matches 3.3V I/O rail systems without leakage. |
| Breakdown Voltage (VBR) | 4.0V min at 1mA - Ensures reliable turn-on margin above 3.3V rail while avoiding false triggering. |
| Clamping Voltage (VCL) | 7.5V max at 5A - Limits transient overvoltage to safe levels for 3.3V logic inputs during ESD events. |
| Junction Capacitance (CT) | 280pF at 0V, 1MHz - Enables use on high-speed digital lines (e.g., USB D+/D−) without signal integrity loss. |
| ESD Rating | ±30kV air & contact per IEC 61000-4-2 - Meets highest consumer-grade ESD immunity requirements. |
| Peak Pulse Current (IPP) | 35A at 8/20μs - Handles severe surge transients typical of handheld device handling and docking events. |
| Package | X1-DFN1006-2 (1.08 × 0.68 × 0.53mm) - Ultra-compact footprint for space-constrained PCB layouts in smartphones and wearables. |
Pinout & Package
Package: X1-DFN1006-2 - 2-terminal, bottom-exposed thermal pad-less, ultra-thin (0.53mm max height), RoHS-compliant molded plastic case with NiPdAu terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode | Connected to protected signal line; conducts surge current toward ground when VAK > VBR. |
| Pin 2 | Anode | Connected to system ground; completes ESD current path with low-inductance layout. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile | 0.53mm max height - Enables integration beneath thin bezels and stacked flex PCB assemblies. |
| IEC 61000-4-2 certified ESD protection | ±30kV contact/air - Eliminates need for external ESD test rework in end-product qualification. |
| Low channel capacitance | 280pF - Preserves rise time and eye diagram integrity on 480Mbps USB 2.0 differential pairs. |
| Lead-free & halogen-free | RoHS 3 / "Green" compliant (<900ppm Br, <900ppm Cl, <1000ppm Sb) - Supports global environmental compliance programs. |
Applications
| Smartphone Front-Facing Camera Interface | USB 2.0 OTG Port Protection |
|---|---|
Use Scenario: ESD events during cable insertion/removal or finger touch near camera module flex connectors. IC Role / Device Role / Timing Role: Unidirectional TVS clamp on MIPI CSI-2 data lanes (CLK/DATA+) referenced to ground. Use Value: 280pF capacitance avoids skew between differential signals; 7.5V clamping prevents latch-up in image sensor I/O cells. | Use Scenario: Human-body-model (HBM) discharges into USB D+ and D− pins during hot-plug operations. IC Role / Device Role / Timing Role: Per-lane TVS on each data line, placed immediately before USB transceiver ESD input stage. Use Value: ±30kV rating meets IEC 61000-4-2 Level 4; 35A peak current handles worst-case coupling from adjacent power lines. |
| Wireless Headset Audio Jack | Industrial Handheld Scanner Button Matrix |
Use Scenario: Repeated plug/unplug of 3.5mm TRRS jack causing contact-mode ESD on MIC and HP_L/HP_R lines. IC Role / Device Role / Timing Role: Single-channel TVS on each analog audio path, grounded anode configuration. Use Value: 3.3V VRWM allows direct placement on biased audio lines; low leakage (<5µA) prevents DC offset drift. | Use Scenario: Operator fingertip discharge onto exposed membrane keypad traces in dusty factory environments. IC Role / Device Role / Timing Role: Point-of-entry TVS on each row/column scan line before microcontroller GPIO input. Use Value: 4.0V VBR provides noise margin above 3.3V logic threshold; 0.53mm height fits under keypad overlay. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ3.3A-TP (Micro Commercial) | DO-214AC package (4.5 × 2.7mm); 350W PPP; 300pF CT; VBR = 3.67V min | Higher capacitance and 8× larger footprint - unsuitable for smartphone PCBs but robust for industrial panel interfaces. | Select when board space is unconstrained and higher surge margin (400W available) is prioritized over signal integrity. |
| ESD5Z3.3T5G (ON Semiconductor) | SOD-523 package (1.3 × 0.85 × 0.6mm); 250W PPP; 220pF CT; VBR = 3.5V min | Lower capacitance improves RF front-end isolation but reduced 25A IPP limits use in high-coupling scenarios. | Select for ultra-high-frequency analog paths (e.g., GPS L1 antenna feed) where <250pF is mandatory and 35A surge is not required. |
Compared with SMAJ3.3A-TP and ESD5Z3.3T5G, D3V3H1U2LP-7B uniquely balances 35A surge capability, 280pF capacitance, and 1.08 × 0.68mm footprint - making it optimal for space- and speed-critical consumer portables where both ESD robustness and signal fidelity must coexist.
Availability
D3V3H1U2LP-7B is available at Aetrix Electronics and suitable for cellular handsets, portable medical monitors, and USB-C accessory designs requiring stable component supply across multi-year production cycles.
Supply support for D3V3H1U2LP-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The D3V3H1U2LP belongs to Diodes' X1-DFN ultra-compact TVS portfolio, engineered specifically for ESD protection in next-generation portable electronics where PCB area, signal integrity, and regulatory compliance are simultaneously constrained.
FAQ
What is the maximum operating temperature range for D3V3H1U2LP-7B?
The D3V3H1U2LP-7B is rated for operation from -65°C to +150°C, verified per JESD22-A104 thermal cycling and JESD22-A108 high-temperature storage tests. This range supports deployment in automotive cabin modules and industrial handhelds exposed to extended ambient extremes.
Does D3V3H1U2LP-7B require a thermal pad on the PCB?
No - the X1-DFN1006-2 package lacks an exposed thermal pad. Heat dissipation relies solely on the two NiPdAu-plated terminals and PCB copper area. Diodes recommends using their documented 2oz copper pad layout (available at diodes.com/package-outlines.html) to achieve the specified 500°C/W RθJA.
Can D3V3H1U2LP-7B be used for bidirectional signal lines?
No - D3V3H1U2LP-7B is unidirectional only, with defined cathode (Pin 1) and anode (Pin 2). For bidirectional protection (e.g., USB D+/D− shared line), two devices must be placed back-to-back or a dedicated bidirectional TVS such as D3V3H1B2LP-7B must be selected.
Is D3V3H1U2LP-7B qualified to AEC-Q200?
While not formally AEC-Q200 certified, D3V3H1U2LP-7B is manufactured in IATF 16949-certified facilities and supports automotive change control. Diodes states that AEC-Q200 qualification is available upon request for programs requiring PPAP documentation and stress-tested lots.
D3V3H1U2LP-7B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Package/Case:
- 0402 (1006 Metric)
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 4V
- Voltage - Clamping (Max) @ Ipp:
- 10V
- Current - Peak Pulse (10/1000µs):
- 35A (8/20µs)
- Power - Peak Pulse:
- 350W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 280pF @ 1MHz
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X1-DFN1006-2
D3V3H1U2LP-7B FAQ
1.How can I place an order for D3V3H1U2LP-7B through Aetrix?
Please submit a Request for Quotation (RFQ) for D3V3H1U2LP-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for D3V3H1U2LP-7B reliable?
The price and inventory of D3V3H1U2LP-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for D3V3H1U2LP-7B is usually 5 days.
3.What payment methods are accepted for D3V3H1U2LP-7B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for D3V3H1U2LP-7B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for D3V3H1U2LP-7B?
D3V3H1U2LP-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your D3V3H1U2LP-7B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for D3V3H1U2LP-7B?
For technical support, including D3V3H1U2LP-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your D3V3H1U2LP-7B requirements.
6.How does Aetrix verify that D3V3H1U2LP-7B is sourced from the original manufacturer or authorized distributors?
All D3V3H1U2LP-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that D3V3H1U2LP-7B meets industry standards.
7.What is the process for return or replacement of D3V3H1U2LP-7B?
All D3V3H1U2LP-7B units undergo pre-shipment inspection (PSI). If there is an issue with D3V3H1U2LP-7B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The D3V3H1U2LP-7B part is unused and in its original packaging.
Return procedure for D3V3H1U2LP-7B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
D3V3H1U2LP-7B Tags
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ESD9B5.0ST5G
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DESD3V3E1BL-7B
Diodes Incorporated
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D5V0H1B2LP-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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