Diodes Incorporated D3V3S1U2LP1610Q-7

Overview

D3V3S1U2LP1610Q from Diodes Incorporated is a single-channel unidirectional TVS diode designed for ESD and surge protection of low-voltage I/O lines in portable electronics. It features a 3.3V reverse standoff voltage, 3.8V minimum breakdown voltage, 1400pF typical input capacitance, ±30kV IEC 61000-4-2 contact/air ESD rating, and 180A peak pulse current handling - deployed in cellular handsets and USB data lines.

For engineers reviewing the D3V3S1U2LP1610Q datasheet, D3V3S1U2LP1610Q pinout, D3V3S1U2LP1610Q application, or D3V3S1U2LP1610Q equivalent, key selection criteria include clamping voltage at 10–180A (7–12V), low-leakage operation (<1µA at 3.3V), AEC-Q101 qualification for automotive use, and U-DFN1610-2 footprint compatibility with high-density PCB layouts.

Technical Context

This TVS diode operates as a unidirectional clamp between I/O and ground, activating above 3.8V to divert transient energy while maintaining signal integrity below 3.3V. Its low dynamic resistance (0.03Ω) ensures rapid response to ESD events and minimal voltage overshoot during 8/20µs surges.

The device is optimized for high-speed digital interfaces where capacitance must be balanced against surge robustness: 1400pF enables protection of USB 2.0 and MIPI D-PHY lines without signal degradation, while its 12V clamping at 180A meets IEC 61000-4-5 lightning surge requirements.

Key Specifications

Pinout & Package

Package: U-DFN1610-2 (Type B), 1.6mm × 1.0mm × 0.5mm, 2-terminal surface-mount package with NiPdAu-plated copper leadframe and UL 94V-0 molding compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar TVS diode applications.

Compared with SMAJ3.3A and SP1003-030, D3V3S1U2LP1610Q uniquely combines AEC-Q101 qualification, ultra-compact U-DFN1610-2 footprint, and 1400pF capacitance-making it the only option suitable for space-constrained automotive infotainment I/O protection without sacrificing surge rating or regulatory compliance.

Availability

D3V3S1U2LP1610Q is available at Aetrix Electronics and suitable for cellular handsets, USB 2.0 interfaces, and automotive infotainment systems requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant sourcing.

Supply support for D3V3S1U2LP1610Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' D3V3S series of ultra-low-capacitance TVS diodes engineered specifically for ESD protection of high-speed data lines in portable and automotive electronics.

FAQ

Is D3V3S1U2LP1610Q suitable for bidirectional signal lines like USB D+/D−?

Although unidirectional by construction, D3V3S1U2LP1610Q can protect bidirectional lines when used in pairs (anode-to-line/cathode-to-ground for one direction; cathode-to-line/anode-to-ground for the other) or in conjunction with layout techniques that leverage its low capacitance and fast response. Its 1400pF value is verified for USB 2.0 compliance in standard configurations.

What is the maximum ambient temperature for continuous operation?

The device supports continuous operation from –55°C to +150°C. Derating begins above +25°C: at +85°C ambient, maximum power dissipation drops to ~180mW per the published derating curve, and clamping performance remains stable up to 180A peak pulse within this range.

Does the U-DFN1610-2 package require special soldering profiles?

No special profile is required beyond standard lead-free reflow for Type 2 (SnAgCu) paste. The device is rated Moisture Sensitivity Level 1 per J-STD-020 and supports peak temperatures up to 260°C for ≤60 seconds. Recommended pad layout matches Diodes' published U-DFN1610-2 (Type B) footprint with 0.65mm thermal pad clearance.

How does its 12V clamping voltage at 180A compare to competing TVS diodes?

At 180A, D3V3S1U2LP1610Q clamps to 12V - matching industry benchmarks for 3.3V-rail protection. This value is measured under strict 8/20µs waveform conditions and reflects actual system-level protection margin, unlike theoretical models. Competing devices with similar V_RWM typically clamp between 11.5V and 13.2V at this current level.