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Diodes Incorporated D3V3X4U10LP-7
- Part No.:
- D3V3X4U10LP-7
- Manufacturer:
- Diodes Incorporated
- Category:
- TVS Diodes
- Package:
- 10-UFDFN
- Datasheet:
-
D3V3X4U10LP-7.pdf
- Description:
- TVS DIODE 3.3VWM 3VC U-DFN2510
- Quantity:
- Payment:
- Shipping:
Inventory:35,134
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Product details
Overview
D3V3X4U10LP from Diodes Incorporated is a 4-channel low-capacitance TVS diode array designed for ESD protection of high-speed I/O lines. It features 0.45 pF typical channel input capacitance, 5.5 V minimum reverse breakdown voltage, 6 V clamping voltage at 16 A TLP, and ±8 kV IEC61000-4-2 ESD rating-optimized for USB 3.0/3.1, SATA, and DisplayPort interfaces.
For engineers reviewing the D3V3X4U10LP datasheet, D3V3X4U10LP pinout, D3V3X4U10LP application, or D3V3X4U10LP equivalent, key selection criteria include ultra-low capacitance for signal integrity, low dynamic resistance (0.3 Ω), precise 3.3 V working voltage compliance, and U-DFN2510-10 package compatibility with high-density PCB layouts.
Technical Context
The D3V3X4U10LP integrates four independent bidirectional TVS diodes in a single U-DFN2510-10 package, each configured between an I/O line and VSS. Its low 0.3 Ω TLP dynamic resistance ensures rapid voltage clamping during transient events, while the 0.45 pF input capacitance minimizes signal distortion on differential high-speed links.
It meets IEC61000-4-2 (±8 kV contact/air), IEC61000-4-5 (3 A, 8/20 µs), and operates within –55 °C to +150 °C. The device uses NiPdAu and matte tin terminal finishes, supports 350 mW power dissipation on standard FR-4, and maintains stable clamping performance up to 100 °C ambient per derating curve.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Channel Count | 4 independent bidirectional ESD protection channels |
| Reverse Working Voltage (VRWM) | 3.3 V - matches 3.3 V I/O rail systems without leakage or false triggering |
| Breakdown Voltage (VBR min) | 5.5 V - ensures robust margin above 3.3 V rail while enabling fast avalanche response |
| Clamping Voltage (VESD @ 16 A) | 6 V - limits transient overvoltage to safe levels for downstream 3.3 V logic |
| Input Capacitance (CI/O typ) | 0.45 pF - preserves signal integrity on >5 Gbps serial links (e.g., USB 3.1 Gen 1) |
| TLP Dynamic Resistance | 0.3 Ω - reduces voltage overshoot during fast ESD transients (tP = 100 ns) |
| ESD Rating | ±8 kV contact & air (IEC61000-4-2) - satisfies industrial and consumer end-equipment immunity requirements |
Pinout & Package
Package: U-DFN2510-10 (2.5 mm × 1.0 mm × 0.575 mm height), 10-terminal leadless plastic package with exposed thermal pad; RoHS-compliant, halogen-free, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 4, 5 | I/O Channel Anode/Cathode | Bidirectional ESD path per channel - connects directly to protected high-speed data lines |
| 3, 8 | VSS | Common cathode reference node - must be connected to clean, low-impedance ground plane |
| 6, 7, 9, 10 | No Connection | Unbonded terminals - left floating; no PCB trace or solder mask required |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low input capacitance | 0.45 pF typical per channel - enables use in 10 Gbps-class interfaces without insertion loss penalty |
| Low dynamic resistance | 0.3 Ω TLP - minimizes clamping voltage overshoot during sub-100 ns ESD events |
| High ESD robustness | ±8 kV IEC61000-4-2 contact/air - exceeds EN 61000-4-2 Level 4 immunity requirement |
| Compact footprint | U-DFN2510-10 package - saves >60% board area vs. SOIC-16 alternatives while maintaining thermal performance |
Applications
| USB 3.0/3.1 Interface Protection | SATA III Transceiver Protection |
|---|---|
Use Scenario: Protecting SuperSpeed TX/RX differential pairs in host/device controllers against ESD events during hot-plug insertion. IC Role / Device Role / Timing Role: Bidirectional transient voltage suppressor placed immediately adjacent to connector pins. Use Value: 0.45 pF capacitance avoids eye diagram degradation; 6 V clamping prevents damage to SerDes PHYs rated for 3.3 V operation. | Use Scenario: Shielding SATA III (6 Gbps) data lanes from ESD during cable mating in storage enclosures and motherboards. IC Role / Device Role / Timing Role: Low-capacitance TVS array bridging each differential pair to chassis ground via VSS. Use Value: Sub-0.5 pF loading preserves impedance matching and jitter budget; 0.3 Ω dynamic resistance ensures <1 ns response time. |
| DisplayPort 1.4 Source Protection | PCIe Gen3 Lane Protection |
Use Scenario: Guarding DP++ adapter circuits and source-side main link lanes against user-handling ESD in docking stations and monitors. IC Role / Device Role / Timing Role: Four-channel TVS array placed before level shifters and AC-coupling capacitors. Use Value: Matches DP 1.4's 8.1 Gbps per lane; clamping voltage stays below receiver absolute maximum rating under 16 A TLP stress. | Use Scenario: Securing PCIe Gen3 x4 root complex or endpoint lanes in embedded computing modules subject to field ESD exposure. IC Role / Device Role / Timing Role: Per-lane ESD clamp integrated into compact BGA or QFN-based carrier boards. Use Value: 3.3 V VRWM aligns with PCIe common-mode voltage; 0.45 pF loading avoids PCIe Gen3 eye mask failure in compliance testing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar TVS diode array applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SZ1.8SMAT3G | Single-channel, 1.8 V VRWM, 0.5 pF, SOD-323 package | Requires 4 discrete placements; higher total board area and parasitic inductance | Select when space allows discrete layout or lower VRWM (<2.5 V) is required |
| TPD4E05U06DQAR | 4-channel, 5.5 V VRWM, 0.5 pF, X2SON-8 package, 1.5 mm × 1.0 mm | Higher VRWM increases risk of false triggering on 3.3 V rails; larger pitch complicates routing | Prefer only if legacy design already uses TI's footprint or requires automotive qualification (AEC-Q101) |
Compared with SZ1.8SMAT3G and TPD4E05U06DQAR, D3V3X4U10LP delivers optimal balance of 3.3 V system compatibility, 0.45 pF signal fidelity, and U-DFN2510-10 miniaturization-making it the preferred choice for next-gen high-speed interface protection where board space and signal integrity are critical.
Availability
D3V3X4U10LP is available at Aetrix Electronics and suitable for USB 3.1 host controllers, SATA III storage modules, and DisplayPort 1.4 source designs requiring stable component supply, consistent parametric performance, and long-term production continuity.
Supply support for D3V3X4U10LP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability protection, signal integrity, and power management solutions for industrial, computing, and consumer markets.
The D3V3X4U10LP belongs to Diodes' high-speed ESD protection product line, engineered specifically for preserving signal fidelity in multi-gigabit serial interfaces while delivering certified IEC-level surge immunity in minimal footprint packages.
FAQ
What is the maximum operating temperature for D3V3X4U10LP?
The D3V3X4U10LP is rated for continuous operation from –55 °C to +150 °C junction temperature. Its thermal resistance (RθJA = 360 °C/W) assumes mounting on a standard 2 oz copper FR-4 PCB per Diodes' recommended pad layout. Derating begins above 100 °C ambient, as shown in Figure 1 of the datasheet.
Can D3V3X4U10LP be used on 5 V I/O lines?
No - D3V3X4U10LP has a 3.3 V reverse working voltage (VRWM) and 5.5 V minimum breakdown voltage. Using it on 5 V rails risks premature conduction and excessive leakage current. For 5 V applications, Diodes offers the D5V0X4U10LP (5.0 V VRWM) in the same U-DFN2510-10 package.
Is the U-DFN2510-10 package thermally enhanced?
Yes - the U-DFN2510-10 package includes an exposed thermal pad (pin 3/8 VSS connection) that must be soldered to a dedicated PCB copper pour for optimal thermal performance. Diodes specifies 350 mW power dissipation using their recommended 2 oz copper pad layout, which improves heat spreading versus standard land patterns.
Does D3V3X4U10LP meet AEC-Q200 for automotive use?
No - the standard D3V3X4U10LP is not AEC-Q200 qualified. However, Diodes offers the automotive-grade variant D3V3X4U10LPQ (same electrical specs, qualified to AEC-Q200 Grade 2, –40 °C to +105 °C ambient), documented in a separate datasheet (DS39091Q).
D3V3X4U10LP-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Package/Case:
- 10-UFDFN
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 4
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 3.3V (Max)
- Voltage - Breakdown (Min):
- 5.5V
- Voltage - Clamping (Max) @ Ipp:
- 3V (Typ)
- Current - Peak Pulse (10/1000µs):
- 3A (8/20µs)
- Power - Peak Pulse:
- 18W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- 450pF @ 1MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2510-10
D3V3X4U10LP-7 FAQ
1.How can I place an order for D3V3X4U10LP-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for D3V3X4U10LP-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for D3V3X4U10LP-7 reliable?
The price and inventory of D3V3X4U10LP-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for D3V3X4U10LP-7 is usually 5 days.
3.What payment methods are accepted for D3V3X4U10LP-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for D3V3X4U10LP-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for D3V3X4U10LP-7?
D3V3X4U10LP-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your D3V3X4U10LP-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for D3V3X4U10LP-7?
For technical support, including D3V3X4U10LP-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your D3V3X4U10LP-7 requirements.
6.How does Aetrix verify that D3V3X4U10LP-7 is sourced from the original manufacturer or authorized distributors?
All D3V3X4U10LP-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that D3V3X4U10LP-7 meets industry standards.
7.What is the process for return or replacement of D3V3X4U10LP-7?
All D3V3X4U10LP-7 units undergo pre-shipment inspection (PSI). If there is an issue with D3V3X4U10LP-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The D3V3X4U10LP-7 part is unused and in its original packaging.
Return procedure for D3V3X4U10LP-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
D3V3X4U10LP-7 Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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D5V0H1B2LP-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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