Diodes Incorporated D3V3XA4B10LP-7

Overview

D3V3XA4B10LP from Diodes Incorporated is a 4-channel low-capacitance TVS diode array designed for ESD and surge protection of high-speed I/O lines. It features a minimum breakdown voltage of 5.0 V, maximum peak pulse current of 4.0 A (8/20 µs), typical channel input capacitance of 0.28 pF, clamping voltage of 9.4 V at 16 A TLP, and dynamic resistance of 0.39 Ω - enabling robust protection for HDMI 2.1 and USB 3.1 interfaces.

For engineers reviewing the D3V3XA4B10LP datasheet, D3V3XA4B10LP pinout, D3V3XA4B10LP application, or D3V3XA4B10LP equivalent, key selection criteria include ultra-low 0.35 pF max input capacitance, ±12 kV IEC 61000-4-2 ESD rating, 4-channel independent protection architecture, and U-DFN2510-10 package compatibility with high-density PCB layouts.

Technical Context

The D3V3XA4B10LP integrates four bidirectional TVS diodes in a single monolithic silicon die, each configured between an I/O line and VSS ground. Its low dynamic resistance (0.39 Ω) and tight clamping (9.4 V @ 16 A TLP) ensure rapid energy diversion during ESD transients while minimizing signal distortion on high-speed differential pairs.

Designed specifically for I/O protection in sub-10 Gbps serial links, it maintains signal integrity via ultra-low 0.28 pF typical capacitance per channel and operates within a -55°C to +150°C junction temperature range. The device meets IEC 61000-4-2 (±12 kV contact/air) and IEC 61000-4-5 (4.0 A, 8/20 µs) immunity standards without external biasing.

Key Specifications

Pinout & Package

Package: U-DFN2510-10 (2.5 mm × 1.0 mm × 0.575 mm height), lead-free NiPdAu-plated terminals, moisture sensitivity level 1, UL 94V-0 molding compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar TVS diode array applications.

Compared with SP3222-04UTG and SZ1.8SMCG-TP, the D3V3XA4B10LP uniquely balances ultra-low 0.28 pF capacitance with 9.4 V clamping and ±12 kV ESD rating - making it optimal for HDMI 2.1, USB 3.1, and DP 1.4a where both speed and protection margin are critical.

Availability

D3V3XA4B10LP is available at Aetrix Electronics and suitable for HDMI 2.1 source designs, USB 3.1 Gen 2 host interfaces, and DisplayPort 1.4a embedded displays requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for D3V3XA4B10LP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The D3V3XA4B10LP belongs to Diodes' high-speed ESD protection product line, engineered specifically for preserving signal fidelity in next-generation serial interfaces while meeting stringent IEC 61000-4-2 and -4-5 compliance requirements.

FAQ

What is the maximum operating temperature for D3V3XA4B10LP?

The D3V3XA4B10LP supports continuous operation from -55°C to +150°C junction temperature. Its thermal resistance (R_θJA) is 360°C/W on standard FR-4 PCB layout with recommended pad dimensions. Derating begins above +70°C ambient per Figure 1 in DS40860 Rev. 2–2.

Can D3V3XA4B10LP protect both differential and single-ended I/Os?

Yes - each of its four channels protects one I/O line referenced to VSS, supporting both differential pairs (e.g., USB 3.1 TX+/TX−) and single-ended signals (e.g., HDMI CEC, DP AUX). The bidirectional TVS structure clamps positive and negative transients equally without polarity constraints.

Is the U-DFN2510-10 package compatible with standard reflow profiles?

Yes - the U-DFN2510-10 package is rated for moisture sensitivity level 1 and qualified for standard Pb-free reflow per J-STD-020. Peak temperature tolerance is 260°C for 10 seconds; recommended profile uses ramp rate ≤3°C/s, preheat 150–200°C, soak 180–200°C for 60–120 s, and reflow peak 235–245°C.

Does D3V3XA4B10LP require external biasing or series impedance?

No - the D3V3XA4B10LP operates passively with no external components. Its internal TVS diodes conduct only during overvoltage events; no DC bias, pull-up/down resistors, or series ferrites are needed. Layout best practice is direct placement at I/O connectors with short, low-inductance VSS traces.