Diodes Incorporated D58V0M4U8MR-13

Overview

D58V0M4U8MR from Diodes Incorporated is a unidirectional 4-channel TVS diode array designed for overvoltage protection in Power over Ethernet (PoE) PSE equipment. It delivers 2.7 kW peak pulse power (8/20 µs), clamps at ≤100 V under 24 A surge, and provides ±30 kV ESD protection per IEC 61000-4-2 (contact/air). Its 55 pF typical channel capacitance and 58 V standoff voltage support high-speed data integrity in PoE line interfaces.

For engineers reviewing the D58V0M4U8MR datasheet, D58V0M4U8MR pinout, D58V0M4U8MR application, or D58V0M4U8MR equivalent, key selection criteria include unidirectional 4-channel architecture, SO-8 package compatibility, 58 V VRWM, 100 V clamping at 24 A, and 55 pF input capacitance-critical for PoE PSE transient suppression without signal degradation.

Technical Context

This device implements four independent unidirectional avalanche breakdown TVS elements in a single SO-8 package, each with a 58 V reverse standoff voltage and 64.4–71.2 V breakdown threshold at 1 mA. It uses silicon planar junction technology optimized for fast response (<1 ns) to ESD and lightning-induced transients.

The array integrates decoupling capacitance (55 pF/channel at 50 V, 1 MHz) directly into each protection path, eliminating need for external bypass caps in PoE line filtering. Thermal design relies on FR-4 PCB mounting with 2 oz copper, achieving 125 °C/W junction-to-ambient resistance and 1.0 W steady-state power dissipation.

Key Specifications

Pinout & Package

Package: SO-8 surface-mount plastic package with matte tin-plated copper leadframe, UL 94V-0 rated molding compound, and moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar TVS diode array applications.

Compared with SMAJ58A-13-F and SP1006-04UTG, D58V0M4U8MR uniquely combines 4-channel integration, SO-8 manufacturability, 2.7 kW per channel, and matched 55 pF capacitance-making it optimal for high-reliability PoE PSE line cards requiring minimal layout overhead and maximum surge margin.

Availability

D58V0M4U8MR is available at Aetrix Electronics and suitable for Power over Ethernet PSE equipment, industrial Ethernet switch ports, telecom DSLAM interfaces, and outdoor wireless access point power feeds requiring stable component supply and long-term lifecycle assurance.

Supply support for D58V0M4U8MR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' TVS Diode Array product line, engineered specifically for high-density, multi-line transient suppression in Ethernet, USB, HDMI, and PoE infrastructure-emphasizing low capacitance, precise clamping, and industry-standard ESD robustness.

FAQ

What is the maximum operating temperature range for D58V0M4U8MR?

The device operates and stores from −65 °C to +150 °C. Its SO-8 package and silicon junction design maintain stable clamping performance across this full industrial temperature range, with leakage current remaining below 0.2 µA at 58 V up to 125 °C ambient (per Figure 8).

Can D58V0M4U8MR be used in bidirectional signal lines?

No-it is strictly unidirectional and intended for DC-biased lines like PoE PSE outputs. For bidirectional data lines (e.g., Ethernet MDI), use a symmetric bidirectional array such as D5V0F4U10LP-7, which features matched forward/reverse clamping and lower capacitance.

How does the 55 pF channel capacitance affect 1000BASE-T performance?

At 100 MHz, 55 pF introduces <0.3 dB insertion loss and <0.5° phase shift across the 100BASE-TX/1000BASE-T bandwidth-well within IEEE 802.3 compliance margins. The capacitance is tightly controlled (±15%) and measured at 50 V bias to reflect real-world PoE line conditions.

Is D58V0M4U8MR compliant with RoHS and halogen-free standards?

Yes-fully compliant with EU RoHS 2011/65/EU, lead-free, and halogen/antimony-free ("Green" per Diodes' definition: <900 ppm Br, <900 ppm Cl, <1000 ppm Sb). The SO-8 package uses UL 94V-0 molding compound and matte tin-plated copper leads solderable per MIL-STD-202.