Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated D6V3E1U2LP-7B

Part No.:
D6V3E1U2LP-7B
Manufacturer:
Diodes Incorporated
Category:
TVS Diodes
Package:
0402 (1006 Metric)
Datasheet:
AetrixD6V3E1U2LP-7B.pdf
Description:
TVS DIODE 6.3VWM 10.5VC 2DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:18,541

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

D6V3E1U2LP-7B from Diodes Incorporated is a unidirectional transient voltage suppression (TVS) diode designed for ESD protection of single I/O lines in portable electronics. It features a 6.5V minimum breakdown voltage, 25A peak pulse current (8/20µs), 200pF typical junction capacitance, and ±30kV IEC 61000-4-2 contact/air discharge rating - deployed in cellular handsets to safeguard USB or audio interface pins.

For engineers reviewing the D6V3E1U2LP-7B datasheet, D6V3E1U2LP-7B pinout, D6V3E1U2LP-7B application, or D6V3E1U2LP-7B equivalent, key selection criteria include clamping voltage at 25A (≤12V), ultra-low profile (0.53mm max height), DFN1006-2 package compatibility, and RoHS/halogen-free compliance for high-density PCB layouts.

Technical Context

This TVS operates as a unidirectional clamp between I/O and ground, triggering above 6.5V reverse breakdown to divert ESD transients. Its low 200pF capacitance minimizes signal distortion on high-speed lines like USB 2.0 or audio codecs, while the 9.0–12.0V clamping range at 20–25A ensures safe voltage limiting during surge events.

The device uses a silicon avalanche structure in a lead-free, halogen-free DFN1006-2 package with NiPdAu-plated terminals. Thermal resistance is 500°C/W (junction-to-ambient), and power derating begins above 25°C ambient per Figure 1 - critical for sustained operation in thermally constrained handheld enclosures.

Key Specifications

ParameterValue and Actual Design Meaning
VRWM6.3V maximum reverse working voltage - ensures no leakage conduction during normal 5V/3.3V I/O operation
VBR (min)6.5V at 1mA - defines earliest activation threshold for ESD clamping
VCL @ 25A10.5–12.0V (8/20µs) - limits voltage seen by protected IC during worst-case surge
IPP25A peak pulse current - withstands IEC 61000-4-5 lightning surge (line-to-ground)
CT200pF at 0V, 1MHz - preserves signal integrity on data lines up to ~100MHz
ESD Rating±30kV contact & air (IEC 61000-4-2) - exceeds industrial immunity requirements
PPP300W peak pulse power (8/20µs) - supports multi-pulse ESD event robustness

Pinout & Package

Supplied in X1-DFN1006-2 package: 1.08mm × 0.68mm footprint, 0.53mm max height, 2-terminal surface-mount outline with exposed thermal pad not present (standard DFN-2).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1AnodeConnected to protected I/O line; forward-biased during positive transients
Pin 2CathodeConnected to system ground; provides low-impedance path for ESD current return

Key Features

FeatureDesign Value
Ultra-low profile0.53mm max height - enables use under mechanical shields and in slim bezel designs
Low capacitance200pF typical - avoids signal rise-time degradation on USB 2.0 or I²S interfaces
High ESD immunity±30kV contact/air - eliminates need for secondary board-level protection in consumer handsets
Green constructionHalogen- and antimony-free, RoHS 3 compliant - meets global environmental compliance mandates

Applications

Cellular HandsetsUSB Interface Protection

Use Scenario: ESD protection on SIM card slot, microphone input, or side-button lines in smartphones.

IC Role / Device Role: Unidirectional TVS clamp shunting ESD current from I/O to ground before it reaches baseband processor GPIO.

Use Value: Prevents latch-up or gate oxide damage in 28nm/16nm SoCs with <100V HBM tolerance.

Use Scenario: Protecting USB 2.0 D+ and D− lines against user-handling ESD in portable accessories.

IC Role / Device Role: Low-capacitance TVS placed directly at connector to minimize stub inductance.

Use Value: Maintains USB 2.0 eye diagram integrity (≤200pF) while passing ±30kV IEC 61000-4-2 testing.

Digital CamerasAudio Codec Interfaces

Use Scenario: Shielding image sensor control lines (I²C clock/data) from ESD during lens attachment/detachment.

IC Role / Device Role: Single-channel TVS on each I²C line to prevent bus lockup during hot-plug events.

Use Value: Enables reliable I²C communication at 400kHz without added series resistance or timing margin loss.

Use Scenario: Protecting headset jack detection and audio DAC output lines in Bluetooth earbuds.

IC Role / Device Role: Anode-to-signal, cathode-to-ground configuration for bidirectional analog signal paths.

Use Value: Clamps ±30kV transients without introducing audible pop/click due to low leakage (<1µA at 6.3V).

Equivalent & Alternatives

The following parts are listed as comparable options for similar unidirectional TVS diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMAJ6.0ADO-214AC package (4.5×2.7mm), 6.0V VRWM, 30A IPP, 400pF CTHigher capacitance limits use to DC/low-speed lines only; larger footprint consumes >4× PCB areaSelect when higher surge rating is needed and board space permits larger package
TPD1E10B06DPYR0.6×0.3mm DFN-2, 6.0V VRWM, 12A IPP, 0.9pF CTLower clamping voltage (6.5V @ 1A) but insufficient for IEC 61000-4-2 ±30kV full complianceSelect only for low-energy ESD environments where sub-1pF capacitance is mandatory

Compared with SMAJ6.0A and TPD1E10B06DPYR, D6V3E1U2LP-7B uniquely balances ±30kV compliance, 200pF capacitance, and 1.08×0.68mm footprint - making it optimal for space-constrained, high-immunity portable I/O protection.

Availability

D6V3E1U2LP-7B is available at Aetrix Electronics and suitable for cellular handsets, USB peripheral designs, and digital camera modules requiring stable component supply with full RoHS 3 and halogen-free compliance.

Supply support for D6V3E1U2LP-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, serving automotive, industrial, computing, and consumer markets with high-reliability components.

D6V3E1U2LP-7B belongs to Diodes' ESD protection product line, engineered specifically for ultra-compact, high-surge-capability TVS solutions targeting portable electronics with stringent size and environmental compliance requirements.

FAQ

What is the polarity configuration of D6V3E1U2LP-7B?

D6V3E1U2LP-7B is a unidirectional TVS diode: Pin 1 is anode (connect to protected line), Pin 2 is cathode (connect to ground). It conducts only during negative transients relative to ground, making it suitable for DC-biased I/O lines like USB or audio where reverse voltage must be blocked during normal operation.

Does D6V3E1U2LP-7B meet automotive AEC-Q200 requirements?

No. D6V3E1U2LP-7B is not AEC-Q200 qualified. It is rated for -65°C to +150°C operating temperature and RoHS 3 compliance, but lacks the stress testing, failure analysis, and qualification documentation required for automotive-grade deployment. For AEC-Q200 applications, consider Diodes' AP7165 series or similar qualified TVS devices.

Can D6V3E1U2LP-7B protect bidirectional analog signals like headset jacks?

Yes, when used in unidirectional configuration with proper biasing: connect cathode to ground and anode to the signal line. Its low leakage (<1µA at 6.3V) prevents DC offset, and 200pF capacitance introduces negligible attenuation below 1MHz - sufficient for mono/stereo audio paths. For true bidirectional protection, a dual-channel device or back-to-back configuration is required.

What is the recommended PCB pad layout for D6V3E1U2LP-7B?

Use Diodes' documented X1-DFN1006-2 pad layout: 0.70mm length (C), 0.30mm width (G), 0.40mm solder mask opening (X), with 1.10mm center-to-center spacing (X1) and 0.70mm width (Y). Avoid thermal relief on pads; ensure solid copper pour beneath for optimal heat dissipation during surge events, per DS41197 suggested layout.

D6V3E1U2LP-7B Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Package/Case:
0402 (1006 Metric)
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
6.3V (Max)
Voltage - Breakdown (Min):
6.5V
Voltage - Clamping (Max) @ Ipp:
10.5V
Current - Peak Pulse (10/1000µs):
25A
Power - Peak Pulse:
300W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
200pF @ 1MHz
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
X1-DFN1006-2

D6V3E1U2LP-7B FAQ

1.How can I place an order for D6V3E1U2LP-7B through Aetrix?

Please submit a Request for Quotation (RFQ) for D6V3E1U2LP-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for D6V3E1U2LP-7B reliable?

The price and inventory of D6V3E1U2LP-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for D6V3E1U2LP-7B is usually 5 days.

3.What payment methods are accepted for D6V3E1U2LP-7B?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for D6V3E1U2LP-7B transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for D6V3E1U2LP-7B?

D6V3E1U2LP-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your D6V3E1U2LP-7B order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for D6V3E1U2LP-7B?

For technical support, including D6V3E1U2LP-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your D6V3E1U2LP-7B requirements.

6.How does Aetrix verify that D6V3E1U2LP-7B is sourced from the original manufacturer or authorized distributors?

All D6V3E1U2LP-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that D6V3E1U2LP-7B meets industry standards.

7.What is the process for return or replacement of D6V3E1U2LP-7B?

All D6V3E1U2LP-7B units undergo pre-shipment inspection (PSI). If there is an issue with D6V3E1U2LP-7B, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The D6V3E1U2LP-7B part is unused and in its original packaging.

Return procedure for D6V3E1U2LP-7B:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

D6V3E1U2LP-7B Tags

  • D6V3E1U2LP-7B
  • D6V3E1U2LP-7B PDF
  • D6V3E1U2LP-7B Datasheet
  • D6V3E1U2LP-7B Specifications
  • D6V3E1U2LP-7B Images
  • Diodes Incorporated
  • Diodes Incorporated D6V3E1U2LP-7B
  • Buy D6V3E1U2LP-7B
  • D6V3E1U2LP-7B Price
  • D6V3E1U2LP-7B Distributor
  • D6V3E1U2LP-7B Supplier
  • D6V3E1U2LP-7B Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER