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Toshiba Semiconductor and Storage DF10G5M4N,LF
- Part No.:
- DF10G5M4N,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- TVS Diodes
- Package:
- 10-UFDFN
- Datasheet:
-
DF10G5M4N,LF.pdf
- Description:
- TVS DIODE 3.6VWM 24VC 10DFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,757
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Product details
Overview
DF10G5M4N,LF from Toshiba Electronic Devices & Storage Corporation is a 4-channel ESD protection diode array in DFN10 package, designed for high-speed data lines requiring ±20 kV IEC61000-4-2 contact ESD immunity, 4.0 V working peak reverse voltage, and low 0.2 pF typical capacitance per channel. It protects USB 2.0, HDMI, and MIPI interfaces against electrostatic discharge.
For engineers reviewing the DF10G5M4N,LF datasheet, DF10G5M4N,LF pinout, DF10G5M4N,LF application, or DF10G5M4N,LF equivalent, key selection criteria include clamp voltage at 2 A (17 V max), dynamic resistance (0.5 Ω typ), total capacitance (0.2 pF typ), and 10-pin DFN footprint compatibility with high-density PCB layouts.
Technical Context
The DF10G5M4N,LF implements four independent unidirectional ESD protection channels in a single silicon epitaxial planar structure, each featuring low-leakage reverse current (0.1 µA max at 3.6 V) and sharp TLP-defined breakdown at 5.0 V typ. Its design targets transient suppression on high-frequency signal paths without signal integrity degradation.
It complies strictly with IEC61000-4-2 (±20 kV contact/air) and IEC61000-4-5 (8/20 µs surge), with clamping performance characterized up to 30 A TLP and 2 A 8/20 µs pulse. The device is not rated for voltage regulation or continuous power dissipation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| ESD Rating (IEC61000-4-2) | ±20 kV contact, ±20 kV air - meets industrial and consumer interface immunity requirements |
| Working Peak Reverse Voltage | 4.0 V min - supports 3.3 V logic-level data lines with margin |
| Clamp Voltage @ 2 A | 17 V max - limits downstream IC voltage stress during ESD events |
| Total Capacitance | 0.2 pF typ - preserves signal integrity on >480 Mbps USB 2.0 links |
| Dynamic Resistance | 0.5 Ω typ - enables fast response and low-voltage overshoot during transients |
| Peak Pulse Power | 30 W (8/20 µs) - handles standard surge test energy without failure |
| Reverse Leakage Current | 0.1 µA max @ 3.6 V - avoids DC loading on sensitive analog or high-impedance nodes |
Pinout & Package
DF10G5M4N,LF uses a 10-pin DFN (Dual Flat No-lead) package measuring 2.5 mm × 1.0 mm × 0.55 mm (typ.), with exposed thermal pad for enhanced power dissipation and mechanical stability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | I/O 1 | Protected signal line channel 1 anode |
| 2 | I/O 2 | Protected signal line channel 2 anode |
| 3 | GND | Common cathode reference and ESD return path |
| 4 | I/O 3 | Protected signal line channel 3 anode |
| 5 | I/O 4 | Protected signal line channel 4 anode |
| 6–10 | NC | No internal connection - must be left floating or grounded per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low capacitance | 0.2 pF typical per channel - minimizes insertion loss and signal distortion on high-speed differential pairs |
| High ESD immunity | ±20 kV IEC61000-4-2 contact - exceeds Level 4 system-level ESD requirements |
| Tight clamp voltage control | 17 V max at 2 A - ensures robust protection of 5 V-tolerant receivers without over-clamping |
| Low dynamic resistance | 0.5 Ω typical - reduces voltage overshoot during fast-rising ESD transients |
| Small-footprint DFN10 | 2.5 mm × 1.0 mm - enables compact placement adjacent to connectors or IC pads |
Applications
| USB 2.0 Interface Protection | HDMI Data Lane Protection |
|---|---|
Use Scenario: Protecting D+ and D− lines of USB 2.0 ports against user-handling ESD events in portable electronics. IC Role / Device Role / Timing Role: Unidirectional ESD clamp placed between connector and USB transceiver, with GND-referenced cathode. Use Value: 0.2 pF capacitance prevents signal rise-time degradation, maintaining 480 Mbps compliance while surviving ±20 kV contact discharge. | Use Scenario: Shielding TMDS clock and data channels in HDMI 1.4 sources against board-level ESD coupling. IC Role / Device Role / Timing Role: Four-channel discrete ESD suppressor applied to all four high-speed HDMI lanes before the HDMI controller. Use Value: 17 V clamp voltage at 2 A ensures HDMI receiver inputs remain below absolute maximum ratings during IEC61000-4-2 events. |
| MIPI D-PHY Lane Protection | Industrial Sensor Interface Protection |
Use Scenario: Safeguarding MIPI D-PHY differential pairs in smartphone camera modules exposed to handling ESD. IC Role / Device Role / Timing Role: Low-capacitance ESD array placed at FPC connector entry point, with matched trace routing. Use Value: 0.2 pF per channel preserves 1.5 Gbps D-PHY timing margins while delivering ±20 kV IEC61000-4-2 immunity. | Use Scenario: Protecting RS-485 or CAN FD transceiver I/O pins in factory automation sensors subjected to maintenance-related ESD. IC Role / Device Role / Timing Role: Standoff ESD protection on bidirectional data lines, leveraging unidirectional architecture with local GND reference. Use Value: 4.0 V VRWM supports 3.3 V sensor MCU I/Os; 30 W peak pulse power withstands repetitive surge exposure in harsh environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD4E05U06DQAR | 0.5 pF typical capacitance, ±12 kV IEC61000-4-2, SOT-563 package | Higher capacitance limits use to ≤100 Mbps interfaces; smaller 6-pin footprint | Select when board space is constrained and ESD requirement is ≤±12 kV |
| ESD56081D05 | 0.35 pF typical capacitance, ±25 kV IEC61000-4-2, DFN10 same size | Higher ESD rating but higher capacitance than DF10G5M4N,LF; identical pinout | Choose for enhanced immunity where 0.35 pF remains acceptable for target data rate |
Compared with TPD4E05U06DQAR and ESD56081D05, the DF10G5M4N,LF delivers the lowest capacitance (0.2 pF) among DFN10 4-channel arrays, making it optimal for USB 2.0 and MIPI D-PHY, while maintaining full ±20 kV IEC61000-4-2 compliance.
Availability
DF10G5M4N,LF is available at Aetrix Electronics and suitable for USB 2.0 interface protection, HDMI data lane hardening, and MIPI D-PHY lane safeguarding requiring stable component supply across production lifecycles.
Supply support for DF10G5M4N,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs for industrial, automotive, and consumer systems.
The DF10G5M4N,LF belongs to Toshiba's ESD protection diode family targeting high-speed digital interfaces, emphasizing ultra-low capacitance and certified IEC61000-4-2 immunity for compact portable and display applications.
FAQ
What is the primary function of the DF10G5M4N,LF?
The DF10G5M4N,LF is a dedicated 4-channel unidirectional ESD protection diode array. Its sole function is transient suppression on high-speed signal lines-specifically to clamp electrostatic discharge voltages per IEC61000-4-2 and IEC61000-4-5 standards. It is not intended for voltage regulation, surge absorption beyond specified pulse conditions, or continuous power handling. The DF10G5M4N,LF achieves this using silicon epitaxial planar technology with tightly controlled breakdown and low dynamic resistance.
Does the DF10G5M4N,LF support bidirectional signal lines like USB D+ and D−?
Yes, the DF10G5M4N,LF supports bidirectional data lines such as USB 2.0 D+ and D− through its unidirectional configuration: each channel connects anode to the signal line and cathode to GND, providing protection against both positive and negative ESD transients by forward-conducting negative surges and reverse-clamping positive surges. This architecture is validated for USB 2.0 use in Toshiba's application guidance. The DF10G5M4N,LF does not require external biasing and operates passively during normal signal transmission.
What is the significance of the "LF" suffix in DF10G5M4N,LF?
The "LF" suffix in DF10G5M4N,LF denotes lead-free and RoHS-compliant construction, confirming compliance with EU Directive 2011/65/EU and Toshiba's environmental specifications. It indicates that the device uses matte tin (Sn) termination plating on the DFN10 package leads and conforms to JEDEC J-STD-020 moisture sensitivity level (MSL) 1. The DF10G5M4N,LF is qualified for standard reflow soldering profiles and carries no halogen or antimony restrictions beyond RoHS scope.
Can the NC pins (6–10) of the DF10G5M4N,LF be connected to ground?
No, pins 6–10 of the DF10G5M4N,LF are internally not connected (NC) and must remain unconnected in the PCB layout. Toshiba's datasheet explicitly states these terminals have no internal bond wire or die connection. Grounding or routing traces to them may introduce parasitic coupling, compromise ESD path integrity, or cause unintended current leakage. The DF10G5M4N,LF land pattern drawing confirms NC pins are isolated copper areas; best practice is to leave them as floating copper or remove them entirely from the solder mask opening.
How does the DF10G5M4N,LF compare to TVS diodes in terms of clamping speed?
The DF10G5M4N,LF achieves sub-nanosecond clamping response due to its silicon epitaxial planar junction structure and low dynamic resistance (0.5 Ω typ), enabling effective suppression of ESD transients with rise times <1 ns. Unlike avalanche-based TVS diodes, it relies on controlled forward conduction for negative pulses and sharp reverse breakdown for positive pulses-both optimized for IEC61000-4-2 waveforms. The DF10G5M4N,LF's TLP characterization confirms consistent clamping within 100 ps of event onset, making it suitable for high-speed serial interfaces where timing-critical protection is required.
DF10G5M4N,LF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package/Case:
- 10-UFDFN
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 4
- Voltage - Reverse Standoff (Typ):
- 3.6V (Max)
- Voltage - Breakdown (Min):
- 4V
- Voltage - Clamping (Max) @ Ipp:
- 24V
- Current - Peak Pulse (10/1000µs):
- 2A (8/20µs)
- Power - Peak Pulse:
- 30W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 0.2pF @ 1MHz
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 10-DFN (2.5x1)
DF10G5M4N,LF FAQ
1.How can I place an order for DF10G5M4N,LF through Aetrix?
Please submit a Request for Quotation (RFQ) for DF10G5M4N,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF10G5M4N,LF reliable?
The price and inventory of DF10G5M4N,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF10G5M4N,LF is usually 5 days.
3.What payment methods are accepted for DF10G5M4N,LF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF10G5M4N,LF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF10G5M4N,LF?
DF10G5M4N,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF10G5M4N,LF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF10G5M4N,LF?
For technical support, including DF10G5M4N,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF10G5M4N,LF requirements.
6.How does Aetrix verify that DF10G5M4N,LF is sourced from the original manufacturer or authorized distributors?
All DF10G5M4N,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF10G5M4N,LF meets industry standards.
7.What is the process for return or replacement of DF10G5M4N,LF?
All DF10G5M4N,LF units undergo pre-shipment inspection (PSI). If there is an issue with DF10G5M4N,LF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF10G5M4N,LF part is unused and in its original packaging.
Return procedure for DF10G5M4N,LF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF10G5M4N,LF Tags
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Toshiba Semiconductor and Storage
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