Toshiba Semiconductor and Storage DF10G6M4N,LF
- Part No.:
- DF10G6M4N,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- TVS Diodes
- Package:
- 10-UFDFN
- Datasheet:
-
DF10G6M4N,LF.pdf
- Description:
- TVS DIODE 5.5VWM 25VC 10DFN
- Quantity:
- Payment:

- Shipping:

Inventory:9,841
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Product details
Overview
DF10G6M4N,LF from Toshiba Electronic Devices & Storage Corporation is an ESD protection diode array in a 10-pin DFN package, designed for high-speed data line protection. It delivers ±20 kV IEC61000-4-2 contact ESD immunity, 5.6 V working peak reverse voltage, and 0.2 pF typical total capacitance-enabling robust protection of USB 3.0, HDMI, and MIPI interfaces without signal integrity degradation.
For engineers reviewing the DF10G6M4N,LF datasheet, DF10G6M4N,LF pinout, DF10G6M4N,LF application, or DF10G6M4N,LF equivalent, key selection criteria include clamping performance at 2 A (15 V max), dynamic resistance (0.3 Ω typ.), low leakage (<0.1 µA), and compatibility with high-frequency serial links requiring sub-0.3 pF parasitic capacitance.
Technical Context
The DF10G6M4N,LF integrates four independent bidirectional ESD protection channels in a single DFN10 package, each featuring silicon epitaxial planar junction technology optimized for fast transient response. Its TLP-tested dynamic resistance (0.3 Ω) and low clamping voltage (10 V typ. at 1 A) ensure minimal voltage overshoot during ESD events.
Designed specifically for I/O line protection-not voltage regulation-the device operates within a -55 °C to +150 °C storage range and supports peak pulse currents up to 2 A per channel under IEC61000-4-5 8/20 µs conditions, with guaranteed 5.6 V VRWM and 6.2 V typical VBR.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| ESD Rating (IEC61000-4-2) | ±20 kV contact, ±20 kV air - meets highest industrial ESD immunity class |
| Working Peak Reverse Voltage (VRWM) | 5.6 V - compatible with 5 V and 3.3 V logic I/O rails |
| Clamp Voltage (VC) | 15 V max at IPP = 2 A - limits transient overvoltage to safe levels for downstream ICs |
| Total Capacitance (Ct) | 0.2 pF typ. at VR = 0 V, f = 1 MHz - preserves signal integrity in >5 Gbps serial links |
| Dynamic Resistance (RDYN) | 0.3 Ω typ. - minimizes IR drop during ESD pulse, improving clamping efficiency |
| Reverse Leakage (IR) | 0.1 µA max at VRWM = 5.5 V - avoids DC loading on sensitive analog or high-impedance nodes |
Pinout & Package
DF10G6M4N,LF uses a 2.5 mm × 1.0 mm × 0.55 mm DFN10 package with exposed thermal pad (EP). The 10-terminal layout supports four independent I/O channels plus ground and no-connect pins.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | I/O 1 | First protected bidirectional data line (e.g., USB D+) |
| 2 | I/O 2 | Second protected bidirectional data line (e.g., USB D−) |
| 3 | GND | Common ground reference for all ESD paths; must be low-inductance connection |
| 4 | I/O 3 | Third protected bidirectional data line (e.g., HDMI TMDS0+) |
| 5 | I/O 4 | Fourth protected bidirectional data line (e.g., HDMI TMDS0−) |
| 6–10 | NC | No-connect terminals - left unconnected per design; not internally bonded |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional ESD protection per channel | Enables symmetric clamping on AC-coupled or differential lines without polarity constraints |
| 0.2 pF typical capacitance | Minimizes insertion loss and phase distortion in high-speed digital interfaces up to 10 Gbps |
| 0.3 Ω dynamic resistance | Reduces voltage overshoot during fast-rising ESD transients (≤1 ns rise time) |
| ±20 kV IEC61000-4-2 rating | Exceeds Level 4 immunity requirements for industrial and consumer end-equipment |
Applications
| USB 3.0 Interface Protection | HDMI 2.0 Signal Line Protection |
|---|---|
Use Scenario: Protecting SuperSpeed USB 3.0 TX/RX differential pairs from ESD events during hot-plug and handling. IC Role / Device Role / Timing Role: Bidirectional transient voltage suppressor placed directly at connector, before PHY IC. Use Value: 0.2 pF capacitance prevents eye diagram degradation; 15 V clamp voltage ensures USB 3.0 receiver input stays below absolute maximum rating (2.0 V above VDD). | Use Scenario: Safeguarding HDMI 2.0 TMDS clock and data channels against contact discharge in AV receivers and monitors. IC Role / Device Role / Timing Role: Low-capacitance ESD clamp on each TMDS differential pair, referenced to chassis ground. Use Value: Sub-0.3 pF capacitance maintains signal integrity at 6 Gbps; ±20 kV rating covers CE-marked equipment compliance. |
| MIPI D-PHY Camera Interface | Industrial Display Serial Link |
Use Scenario: ESD hardening of mobile camera module flex cables connecting to SoC D-PHY lanes. IC Role / Device Role / Timing Role: Four-channel ESD protector aligned with D-PHY data/lane and clock pairs (CLK+/CLK−, DATA+/DATA−). Use Value: 5.6 V VRWM matches D-PHY 1.2 V/1.8 V rail voltages; 0.3 Ω RDYN enables fast clamping without jitter injection. | Use Scenario: Protecting LVDS or mini-LVDS video links in factory automation HMIs and medical displays. IC Role / Device Role / Timing Role: Point-of-entry ESD suppression on differential video signal traces routed across long PCB runs. Use Value: 10 V typical VC at 1 A ensures downstream LVDS receiver remains within 1.2 V common-mode tolerance; DFN10 footprint saves board space vs. discrete diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD4E05U06DBVR | 4-channel, 0.5 pF typical capacitance, 5.5 V VRWM, SOT-563 package | Higher capacitance limits use to ≤1 Gbps links; smaller 1.6 mm × 1.6 mm footprint | Preferred when board space is more critical than signal bandwidth |
| ESD56411D05-2/TR | 4-channel, 0.35 pF typical capacitance, 5.6 V VRWM, DFN2510-10 package (same outline) | 15% higher capacitance; identical pinout and thermal pad design | Drop-in replacement where slightly relaxed HF performance is acceptable |
Compared with TPD4E05U06DBVR and ESD56411D05-2/TR, DF10G6M4N,LF offers the lowest capacitance (0.2 pF) and best high-speed suitability for >5 Gbps interfaces, while maintaining identical DFN10 mechanical compatibility with ESD56411D05-2/TR.
Availability
DF10G6M4N,LF is available at Aetrix Electronics and suitable for USB 3.0 interface protection, HDMI 2.0 signal line hardening, and MIPI D-PHY camera module designs requiring stable component supply and consistent ESD performance across production batches.
Supply support for DF10G6M4N,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and system-level integration.
The DF10G6M4N,LF belongs to Toshiba's ESD protection diode family targeting high-speed serial interface protection, developed to meet stringent IEC61000-4-2 immunity requirements without compromising signal fidelity.
FAQ
What is the maximum clamping voltage of DF10G6M4N,LF at 2 A peak pulse current?
The DF10G6M4N,LF has a maximum clamping voltage (VC) of 15 V at IPP = 2 A under IEC61000-4-5 8/20 µs pulse conditions. This value is specified in the Electrical Characteristics table and ensures downstream ICs remain within safe operating voltage limits during surge events. The DF10G6M4N,LF achieves this with a low 0.3 Ω dynamic resistance, minimizing IR-induced overshoot.
Does DF10G6M4N,LF support unidirectional or bidirectional ESD protection?
DF10G6M4N,LF provides bidirectional ESD protection on each of its four I/O channels. This is confirmed by its ±20 kV IEC61000-4-2 rating and symmetrical I-V characteristics shown in Figure 7.1 of the datasheet. The device is intended for AC-coupled or differential signal lines such as USB, HDMI, and MIPI, where polarity-independent clamping is required. DF10G6M4N,LF does not require external biasing.
What is the package type and thermal pad configuration of DF10G6M4N,LF?
DF10G6M4N,LF uses a DFN10 (2.5 mm × 1.0 mm × 0.55 mm) package with an exposed thermal pad (EP) on the bottom surface. The land pattern dimensions are provided in Figure 6.1 of the datasheet, and the thermal pad must be soldered to a PCB copper pour for optimal thermal dissipation and ESD path integrity. Weight is 0.0032 g (typical). DF10G6M4N,LF is not offered in any other package variant.
Can DF10G6M4N,LF be used for voltage regulation or overvoltage protection beyond ESD?
No. DF10G6M4N,LF is explicitly designed only for electrostatic discharge protection and is not intended for voltage regulation, overvoltage protection, or surge suppression beyond IEC61000-4-2/4-5 ESD events. The datasheet states this limitation in Section 1 ("Applications") and cautions against use outside ESD protection roles. DF10G6M4N,LF lacks features like precision breakdown tolerance or sustained power dissipation capability required for regulation.
What is the typical total capacitance of DF10G6M4N,LF and why does it matter?
The DF10G6M4N,LF has a typical total capacitance (Ct) of 0.2 pF at VR = 0 V and f = 1 MHz. This ultra-low value is critical for preserving signal integrity in high-speed serial interfaces-such as USB 3.0 (5 Gbps), HDMI 2.0 (6 Gbps), and MIPI D-PHY-by minimizing insertion loss, reflection, and timing skew. DF10G6M4N,LF's 0.2 pF enables clean eye diagrams and reliable bit-error-rate performance where even 0.5 pF would cause measurable degradation.
DF10G6M4N,LF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package/Case:
- 10-UFDFN
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 4
- Voltage - Reverse Standoff (Typ):
- 5.5V (Max)
- Voltage - Breakdown (Min):
- 5.6V
- Voltage - Clamping (Max) @ Ipp:
- 25V
- Current - Peak Pulse (10/1000µs):
- 2A (8/20µs)
- Power - Peak Pulse:
- 30W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 0.2pF @ 1MHz
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 10-DFN (2.5x1)
DF10G6M4N,LF FAQ
1.How can I place an order for DF10G6M4N,LF through Aetrix?
Please submit a Request for Quotation (RFQ) for DF10G6M4N,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF10G6M4N,LF reliable?
The price and inventory of DF10G6M4N,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF10G6M4N,LF is usually 5 days.
3.What payment methods are accepted for DF10G6M4N,LF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF10G6M4N,LF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF10G6M4N,LF?
DF10G6M4N,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF10G6M4N,LF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF10G6M4N,LF?
For technical support, including DF10G6M4N,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF10G6M4N,LF requirements.
6.How does Aetrix verify that DF10G6M4N,LF is sourced from the original manufacturer or authorized distributors?
All DF10G6M4N,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF10G6M4N,LF meets industry standards.
7.What is the process for return or replacement of DF10G6M4N,LF?
All DF10G6M4N,LF units undergo pre-shipment inspection (PSI). If there is an issue with DF10G6M4N,LF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF10G6M4N,LF part is unused and in its original packaging.
Return procedure for DF10G6M4N,LF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF10G6M4N,LF Tags

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Toshiba Semiconductor and Storage

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