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Infineon Technologies DF17MR12W1M1HFB68BPSA1
- Part No.:
- DF17MR12W1M1HFB68BPSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- Module
- Datasheet:
-
DF17MR12W1M1HFB68BPSA1.pdf
- Description:
- LOW POWER EASY
- Quantity:
- Payment:
- Shipping:
Inventory:33
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Product details
Overview
DF17MR12W1M1HFB68BPSA1 from Infineon is a 1200 V, 50 A EasyPACK™ power module integrating CoolSiC™ trench MOSFETs, boost diode, bypass diode, inverse-polarity protection diode, body diode, and an integrated NTC thermistor. It features PressFIT contact technology, low stray inductance (10 nH), and rugged clamped mounting for high-reliability solar inverters and industrial UPS systems.
For engineers reviewing the DF17MR12W1M1HFB68BPSA1 datasheet, DF17MR12W1M1HFB68BPSA1 pinout, DF17MR12W1M1HFB68BPSA1 application, or DF17MR12W1M1HFB68BPSA1 equivalent, this module delivers verified 1200 V blocking capability, 100 A peak drain current, 1.1 K/W junction-to-heat-sink thermal resistance per MOSFET, and integrated temperature sensing for real-time thermal management in high-efficiency DC–AC conversion stages.
Technical Context
This module implements a multi-die, dual-switch topology with discrete SiC MOSFETs and silicon diodes optimized for hard-switched and resonant topologies in solar string inverters. Its low-inductive layout (10 nH stray inductance) and symmetric terminal resistance (2–3 mΩ per switch path) minimize voltage overshoot and switching loss asymmetry.
The integrated NTC (5 kΩ at 25 °C, B25/100 = 3433 K) enables closed-loop thermal monitoring without external sensors, while PressFIT terminals eliminate soldering and support high-vibration environments. All diodes are rated for 1200 V VRRM and operate up to 150 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - Enables use in 1000 V DC-link solar applications with 20 % safety margin. |
| IDN | 50 A - Continuous rated current per MOSFET at TH = 65 °C, defining base thermal design point. |
| RDS(on) | 16.2 mΩ (Tvj = 25 °C) - Low conduction loss enabling >99 % efficiency in 10–50 kW inverters. |
| LsCE | 10 nH - Minimizes switching voltage spikes and EMI in fast SiC-based hard-switching circuits. |
| R25 (NTC) | 5 kΩ ±5 % - Standardized resistance at 25 °C for direct interface with common analog temperature ADC inputs. |
| Tvj,max (MOSFET) | 175 °C - Supports overload operation beyond 150 °C with derated lifetime per AN 2021-13. |
| VRRM (Boost Diode) | 1200 V - Matches MOSFET blocking rating for symmetrical voltage sharing in half-bridge configurations. |
Pinout & Package
DF17MR12W1M1HFB68BPSA1 uses the EasyPACK™ 2B package (120 mm × 62 mm × 17 mm), featuring PressFIT solderless terminals and integrated mounting clamps for mechanical robustness and thermal stability on heatsinks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P1, P2 | Positive DC bus input | Parallel-connected high-current terminals for 100 A peak current handling and low-inductance DC feed-in. |
| N1, N2 | Negative DC bus return | Dual-path return with 2 mΩ resistance per path ensures balanced current distribution and thermal symmetry. |
| U, V, W | AC output phases | Three-phase output terminals supporting motor drive or grid-tied inverter outputs with isolated gate drive routing. |
| G1+, G1−, G2+, G2− | MOSFET gate drivers | Dedicated isolated gate connections per switch with internal 4.1 Ω gate resistors for controlled dv/dt. |
| NTC1, NTC2 | NTC thermistor terminals | Differential pair for precision temperature measurement; compatible with standard 2-wire NTC bias circuits. |
Key Features
| Feature | Design Value |
|---|---|
| PressFIT contact technology | Eliminates solder joint fatigue and thermal cycling failure modes; supports >1000 thermal cycles without degradation. |
| Integrated NTC thermistor | 5 kΩ @ 25 °C with ±5 % tolerance and B25/100 = 3433 K-enables accurate junction temperature estimation within ±2.5 °C. |
| Low stray inductance (10 nH) | Reduces voltage overshoot during turn-off by >35 % vs. comparable modules, lowering snubber requirements and EMI filter size. |
| High-current density layout | Supports 50 A continuous per switch with 1.1 K/W RthJH-enables compact heatsink designs for space-constrained solar enclosures. |
| Qualified per IEC 60747/60749/60068 | Validated for industrial environments including humidity, vibration, and thermal shock-no requalification needed for solar OEM deployments. |
Applications
| Solar String Inverter | Industrial UPS System |
|---|---|
|
Use Scenario: High-efficiency DC–AC conversion in 15–30 kW photovoltaic string inverters operating at 1000 V DC bus. IC Role / Device Role / Timing Role: Dual-switch SiC MOSFET + boost diode module serving as active switching stage in three-level NPC or T-type topologies. Use Value: 1200 V rating and 10 nH stray inductance enable >99.1 % peak efficiency and reduced heatsink volume versus 650 V Si IGBT alternatives. |
Use Scenario: Bidirectional power conversion in modular industrial uninterruptible power supplies with battery backup. IC Role / Device Role / Timing Role: Core switching module in inverter and rectifier legs, managing both AC–DC and DC–AC energy flow. Use Value: Integrated NTC and 175 °C MOSFET rating allow dynamic derating during overload events without hardware redesign. |
| EV Charging Station Power Stage | Energy Storage System Converter |
|
Use Scenario: High-power DC fast charging stations requiring 15–25 kW per module with rapid thermal transients. IC Role / Device Role / Timing Role: Primary switching element in interleaved boost and LLC resonant converter stages. Use Value: PressFIT terminals withstand vibration and thermal cycling in mobile infrastructure; 100 A IDRM supports burst-mode charging peaks. |
Use Scenario: Bi-directional DC–DC converters in utility-scale battery energy storage systems (BESS) with 1500 V DC architecture. IC Role / Device Role / Timing Role: High-voltage switching module in dual-active-bridge (DAB) or cascaded H-bridge topologies. Use Value: 1200 V VRRM diodes and 1.11 K/W RthJH per diode ensure stable operation under 150 °C ambient and partial shading conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC power module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FF600R12ME4 | 1200 V, 600 A IGBT module with Si diodes; higher conduction loss, no integrated NTC. | Lower switching frequency (<20 kHz); suited for cost-sensitive industrial drives, not solar MPPT optimization. | Select only if system prioritizes ruggedness over efficiency and thermal feedback is handled externally. |
| IMZ120R030M1H | Discrete 1200 V, 30 mΩ SiC MOSFET in TO-247-4L; no integrated diodes or NTC; requires external boost/bypass diodes. | Enables custom topology design but increases PCB area, layout complexity, and thermal calibration effort. | Prefer when topology flexibility and discrete thermal modeling outweigh integration benefits. |
Compared with FF600R12ME4 and IMZ120R030M1H, DF17MR12W1M1HFB68BPSA1 uniquely combines 1200 V SiC switching, full diode complement, and embedded NTC in one PressFIT package-reducing bill-of-materials count by ≥7 components and eliminating thermal sensor placement uncertainty in solar inverter designs.
Availability
DF17MR12W1M1HFB68BPSA1 is available at Aetrix Electronics and suitable for solar string inverters, industrial UPS systems, and EV DC fast charging stations requiring stable component supply, long-lifecycle assurance, and qualified industrial-grade reliability.
Supply support for DF17MR12W1M1HFB68BPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with leadership in SiC and GaN technologies for energy-efficient systems.
This part belongs to the EasyPACK™ family of press-fit power modules designed specifically for high-efficiency, high-reliability renewable energy conversion systems where thermal performance, integration density, and qualification rigor are critical.
FAQ
What is the maximum continuous operating temperature for the MOSFET die?
The MOSFET junction temperature (Tvj) is rated from –40 °C to 175 °C. Continuous operation up to 175 °C is permitted per Infineon's qualification per IEC 60747, though sustained operation above 150 °C requires lifetime derating per Application Note AN 2021-13. Thermal design must maintain Tvj ≤ 175 °C under worst-case load and ambient conditions.
Does DF17MR12W1M1HFB68BPSA1 include body diodes for freewheeling?
Yes-the module integrates a body diode for each CoolSiC™ MOSFET, rated for 24 A DC forward current at Tvj = 175 °C and VGS = –3 V. Its forward voltage is 3.8 V at 175 °C, enabling reliable freewheeling in hard-switched topologies without external anti-parallel diodes.
Can the integrated NTC be used for real-time junction temperature estimation?
Yes-the NTC (5 kΩ at 25 °C, B25/100 = 3433 K) is thermally coupled to the MOSFET die and calibrated per Infineon's application note AN 2021-13. When used with a 2-wire bias circuit and lookup table or Steinhart-Hart equation, it achieves ±2.5 °C accuracy for junction temperature estimation.
Is PressFIT mounting compatible with standard heatsink surface finishes?
Yes-PressFIT terminals are designed for direct contact with flat, bare copper or nickel-plated aluminum heatsinks meeting Ra ≤ 1.6 µm surface roughness. No thermal paste is required, but interface pressure must be maintained between 20–50 N per clamp per Infineon's mechanical specification.
DF17MR12W1M1HFB68BPSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EasyPACK™
- Package/Case:
- Module
- Packaging:
- Tray
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):
- 1200 V
- Current - Continuous Drain (Id) @ 25°C:
- 45A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 15V, 18V
- Rds On (Max) @ Id, Vgs:
- 16.2mOhm @ 50A, 18V
- Vgs(th) (Max) @ Id:
- 5.15V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs:
- 149 nC @ 18 V
- Vgs (Max):
- +20V, -7V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4400 pF @ 800 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- -
DF17MR12W1M1HFB68BPSA1 FAQ
1.How can I place an order for DF17MR12W1M1HFB68BPSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for DF17MR12W1M1HFB68BPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF17MR12W1M1HFB68BPSA1 reliable?
The price and inventory of DF17MR12W1M1HFB68BPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF17MR12W1M1HFB68BPSA1 is usually 5 days.
3.What payment methods are accepted for DF17MR12W1M1HFB68BPSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF17MR12W1M1HFB68BPSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF17MR12W1M1HFB68BPSA1?
DF17MR12W1M1HFB68BPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF17MR12W1M1HFB68BPSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF17MR12W1M1HFB68BPSA1?
For technical support, including DF17MR12W1M1HFB68BPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF17MR12W1M1HFB68BPSA1 requirements.
6.How does Aetrix verify that DF17MR12W1M1HFB68BPSA1 is sourced from the original manufacturer or authorized distributors?
All DF17MR12W1M1HFB68BPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF17MR12W1M1HFB68BPSA1 meets industry standards.
7.What is the process for return or replacement of DF17MR12W1M1HFB68BPSA1?
All DF17MR12W1M1HFB68BPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with DF17MR12W1M1HFB68BPSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF17MR12W1M1HFB68BPSA1 part is unused and in its original packaging.
Return procedure for DF17MR12W1M1HFB68BPSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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