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Toshiba Semiconductor and Storage DF2B12M4SL,L3F
- Part No.:
- DF2B12M4SL,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- TVS Diodes
- Package:
- 2-SMD, No Lead
- Datasheet:
-
DF2B12M4SL,L3F.pdf
- Description:
- TVS DIODE 11VWM 22VC SL2
- Quantity:
- Payment:
- Shipping:
Inventory:19,975
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Product details
Overview
DF2B12M4SL,L3F from Toshiba Electronic Devices & Storage Corporation is an ultra-compact bidirectional ESD protection diode designed for high-speed signal lines in mobile interfaces. It delivers ±15 kV IEC61000-4-2 contact ESD immunity, 0.2 pF typical capacitance, 0.65 Ω dynamic resistance, and clamps at 17 V (typ.) under 1 A pulse-enabling robust protection without signal integrity degradation in smartphone USB, HDMI, and audio jack circuits.
For engineers reviewing the DF2B12M4SL,L3F datasheet, DF2B12M4SL,L3F pinout, DF2B12M4SL,L3F application, or DF2B12M4SL,L3F equivalent, key selection criteria include low-capacitance ESD protection for <10 V signal rails, snapback-based clamping performance, SL2 package footprint constraints, and IEC61000-4-2/4-5 compliance verification.
Technical Context
The DF2B12M4SL,L3F employs a silicon epitaxial planar structure with snapback-triggered TVS behavior, enabling low clamping voltage (VC = 17 V @ IPP = 1 A) and minimal dynamic resistance (RDYN = 0.65 Ω typ.). Its bidirectional configuration supports symmetric transient suppression on I/O lines referenced to ground.
Designed specifically for high-frequency signal paths, it maintains 0.2 pF typical capacitance at 0 V bias (1 MHz), ensuring negligible insertion loss in >1 Gbps interfaces. The device operates within a 11 V working peak reverse voltage (VRWM) and withstands ±15 kV ESD per IEC61000-4-2 Contact discharge.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| ESD Rating | ±15 kV per IEC61000-4-2 Contact/Air – meets highest consumer-grade ESD immunity requirement |
| Clamp Voltage | 17 V @ 1 A peak pulse – limits voltage stress on protected IC I/O pins during ESD events |
| Dynamic Resistance | 0.65 Ω (typ.) – minimizes voltage overshoot during fast transients via low-impedance conduction path |
| Total Capacitance | 0.2 pF (typ.) @ 0 V, 1 MHz – preserves signal integrity in USB 2.0, MIPI D-PHY, and audio differential pairs |
| Working Peak Reverse Voltage | 11 V – compatible with 3.3 V, 5 V, and 9 V signal rails with margin |
| Package Size | 0.62 mm × 0.32 mm (SL2) – enables placement adjacent to connectors in space-constrained mobile PCBs |
Pinout & Package
The DF2B12M4SL,L3F is housed in the SL2 ultra-miniature surface-mount package (0.62 mm × 0.32 mm, 0.2 mg typical weight), optimized for high-density mobile PCB layouts. Pin 1 and Pin 2 are symmetrical bidirectional terminals requiring connection to signal line and system ground respectively-ground assignment depends on I/O routing direction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Signal Input/Output Terminal | Connected to protected data line (e.g., USB D+, HDMI TMDS+, audio MIC+); polarity-agnostic due to bidirectional design |
| Pin 2 | Ground Reference Terminal | Must be connected directly to low-impedance system ground plane to ensure effective ESD current shunting and stable clamping |
Key Features
| Feature | Design Value |
|---|---|
| Snapback-triggered clamping | Enables 17 V clamping at 1 A while maintaining low dynamic resistance (0.65 Ω), reducing voltage overshoot vs. conventional avalanche diodes |
| Bidirectional ESD protection | Supports AC-coupled and differential signal lines (e.g., USB, HDMI, MIPI) without polarity sensitivity or external biasing |
| Ultra-low 0.2 pF capacitance | Minimizes signal attenuation and timing skew in high-speed serial links up to 480 Mbps (USB 2.0) and beyond |
| SL2 package footprint | 0.62 mm × 0.32 mm land pattern allows placement within 0.3 mm of micro-B/USB-C connector pads, reducing stub length and EMI coupling |
Applications
| Smartphone Interface Protection | Tablet Audio Jack ESD |
|---|---|
Use Scenario: Protecting USB 2.0 D+/D−, HDMI CEC, and SIM card interface lines from repeated ESD events during daily handling and cable insertion. IC Role / Device Role / Timing Role: Bidirectional TVS diode placed immediately adjacent to connector, clamping transients before they reach baseband processor or PMIC I/O cells. Use Value: Prevents latent damage and functional failure in handheld devices subjected to >10,000 contact ESD events over product lifetime. | Use Scenario: Safeguarding 3.5 mm TRRS audio jack microphone and headset detection lines against user-induced static discharge. IC Role / Device Role / Timing Role: Low-capacitance ESD suppressor on analog audio paths, preserving SNR and avoiding audible pop/click artifacts during plug insertion. Use Value: Maintains <−90 dB THD+N performance while delivering ±15 kV IEC61000-4-2 immunity without RC filtering penalties. |
| Notebook PC Touchpad I²C Bus | Mobile Display Serial Link |
Use Scenario: Shielding I²C SDA/SCL lines connecting touchpad controller to EC or PCH from ESD coupling through metal bezel or flex cable. IC Role / Device Role / Timing Role: Dual-channel ESD protection device (one per line) with matched capacitance ensuring <10 ps inter-line skew for reliable 400 kHz timing. Use Value: Eliminates touchpad lockup or ghost-touch errors caused by ESD-induced bus arbitration failure. | Use Scenario: Protecting MIPI D-PHY clock and data lanes between AP and display panel in foldable smartphones. IC Role / Device Role / Timing Role: Ultra-low-capacitance TVS on high-speed differential pairs, placed post-connector to avoid degrading 1.5 Gbps eye diagram. Use Value: Enables full-rate video streaming without pixel corruption or frame drop during repeated pocket-to-hand transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NZQ2001DT5G | Higher capacitance (0.5 pF typ.), lower ESD rating (±12 kV), same SL2 package | Less suitable for >200 Mbps interfaces; acceptable for legacy USB 1.1 or low-speed I²C | Select when cost sensitivity outweighs high-speed signal integrity requirements |
| Vishay DEHD3312L | Lower VRWM (5.5 V), higher clamping (24 V @ 1 A), 0.3 pF capacitance, X1-DFN package (0.6 × 0.3 mm) | Restricted to ≤5 V systems; larger pad pitch may require layout revision | Prefer for 3.3 V-only designs where tighter clamping voltage margin is critical |
Compared with NZQ2001DT5G and DEHD3312L, the DF2B12M4SL,L3F uniquely balances ultra-low capacitance (0.2 pF), ±15 kV ESD rating, and 11 V VRWM-making it optimal for mixed-voltage mobile interfaces where signal fidelity and universal ESD coverage are both mandatory.
Availability
DF2B12M4SL,L3F is available at Aetrix Electronics and suitable for smartphone interface protection, tablet audio jack ESD suppression, notebook PC touchpad I²C bus shielding, and mobile display serial link safeguarding requiring stable component supply across high-volume production cycles.
Supply support for DF2B12M4SL,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on efficiency, miniaturization, and reliability for consumer, industrial, and automotive markets.
The DF2B12M4SL,L3F belongs to Toshiba's DF2B series of ultra-compact ESD protection diodes, engineered specifically to meet stringent capacitance and ESD immunity requirements of modern mobile connectivity interfaces.
FAQ
What is the maximum working voltage supported by the DF2B12M4SL,L3F?
The DF2B12M4SL,L3F has a working peak reverse voltage (VRWM) of 11 V, meaning it is rated for continuous operation on signal lines up to 11 V DC or peak AC. This makes it suitable for 3.3 V, 5 V, and 9 V interfaces with sufficient margin against normal operating transients. Exceeding 11 V risks premature conduction and accelerated wear.
Does the DF2B12M4SL,L3F require orientation-specific placement on the PCB?
No-the DF2B12M4SL,L3F is a bidirectional ESD protection diode with symmetrical terminal characteristics. Either pin can serve as the signal line connection, provided the other is tied directly to a low-impedance ground plane. The internal structure ensures identical clamping behavior in both directions, eliminating orientation concerns during automated placement.
How does the DF2B12M4SL,L3F achieve lower clamping voltage than standard TVS diodes?
The DF2B12M4SL,L3F uses a snapback-triggered silicon epitaxial planar structure that transitions rapidly from high-impedance to low-impedance conduction, achieving a typical clamping voltage of 17 V at 1 A. Its 0.65 Ω dynamic resistance minimizes IR drop during ESD pulses, resulting in lower voltage overshoot compared to conventional avalanche diodes with higher RDYN values.
Can the DF2B12M4SL,L3F protect against IEC61000-4-5 surge events?
The DF2B12M4SL,L3F is rated for 22 W peak pulse power under IEC61000-4-5 8/20 µs conditions, supporting limited surge protection in low-energy secondary circuits. However, it is not intended as primary surge protection; its 1 A peak pulse current rating indicates suitability only for coupled surges or residual energy after upstream MOV/GDT stages-not direct AC line surges.
What is the thermal impact of placing the DF2B12M4SL,L3F near a high-speed connector?
The DF2B12M4SL,L3F has a typical weight of 0.2 mg and no active power dissipation during normal operation. Under ESD events, energy dissipation is brief (<100 ns) and localized, causing negligible steady-state temperature rise. Its SL2 package's copper termination provides adequate thermal conduction to the PCB ground plane, preventing thermal stress on adjacent high-speed traces or connectors.
DF2B12M4SL,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package/Case:
- 2-SMD, No Lead
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 11V (Max)
- Voltage - Breakdown (Min):
- 11.5V
- Voltage - Clamping (Max) @ Ipp:
- 22V
- Current - Peak Pulse (10/1000µs):
- 1A (8/20µs)
- Power - Peak Pulse:
- 22W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 0.2pF @ 1MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SL2
DF2B12M4SL,L3F FAQ
1.How can I place an order for DF2B12M4SL,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for DF2B12M4SL,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF2B12M4SL,L3F reliable?
The price and inventory of DF2B12M4SL,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF2B12M4SL,L3F is usually 5 days.
3.What payment methods are accepted for DF2B12M4SL,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF2B12M4SL,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF2B12M4SL,L3F?
DF2B12M4SL,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF2B12M4SL,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF2B12M4SL,L3F?
For technical support, including DF2B12M4SL,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF2B12M4SL,L3F requirements.
6.How does Aetrix verify that DF2B12M4SL,L3F is sourced from the original manufacturer or authorized distributors?
All DF2B12M4SL,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF2B12M4SL,L3F meets industry standards.
7.What is the process for return or replacement of DF2B12M4SL,L3F?
All DF2B12M4SL,L3F units undergo pre-shipment inspection (PSI). If there is an issue with DF2B12M4SL,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF2B12M4SL,L3F part is unused and in its original packaging.
Return procedure for DF2B12M4SL,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF2B12M4SL,L3F Tags
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