My Inquiry
My Account
Toshiba Semiconductor and Storage DF2B18FU,H3F
- Part No.:
- DF2B18FU,H3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- TVS Diodes
- Package:
- SC-76, SOD-323
- Datasheet:
-
DF2B18FU,H3F.pdf
- Description:
- TVS DIODE 12VWM 33VC USC
- Quantity:
- Payment:
- Shipping:
Inventory:2,480
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DF2B18FU,H3F from Toshiba Electronic Devices & Storage Corporation is an AEC-Q101-qualified ESD protection diode in a USC (Ultra Small Chip) package, designed for bidirectional transient suppression with 16.2 V working peak reverse voltage, ±30 kV IEC61000-4-2 contact ESD rating, and 9 V clamp voltage at 1 A. It protects high-speed data lines in automotive infotainment interfaces.
For engineers reviewing the DF2B18FU,H3F datasheet, DF2B18FU,H3F pinout, DF2B18FU,H3F application, or DF2B18FU,H3F equivalent, key selection criteria include its 10 pF capacitance for USB 2.0 signal integrity, low 0.8 Ω dynamic resistance for fast clamping response, and AEC-Q101 qualification for under-hood automotive use.
Technical Context
This device implements a silicon epitaxial planar dual-diode structure configured in a common-cathode arrangement for bidirectional ESD protection. Its electrical behavior is defined by IEC61000-4-2 and ISO10605 test waveforms, with clamping performance validated using 8/20 µs IEC61000-4-5 pulses.
The DF2B18FU,H3F operates within a -55 °C to +150 °C junction temperature range and delivers 80 W peak pulse power handling. Its 23 V typical reverse breakdown voltage ensures robust margin above the 16.2 V VRWM, while the 10 pF total capacitance supports high-frequency signal paths without distortion.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 16.2 V - Maximum continuous reverse voltage before leakage exceeds 0.1 µA; sets operating ceiling for protected line. |
| VBR (typ) | 19 V - Reverse breakdown occurs at this voltage with 1 mA test current; defines turn-on threshold for ESD events. |
| VC @ 1 A | 9 V - Clamped voltage during 1 A transient; limits stress on downstream ICs like USB transceivers. |
| Capacitance | 10 pF @ 0 V, 1 MHz - Enables use on 480 Mbps USB 2.0 differential pairs without signal degradation. |
| ESD Rating | ±30 kV (IEC61000-4-2 contact) - Withstands direct human-body model discharges common in assembly and service environments. |
| Dynamic R | 0.8 Ω - Low impedance during clamping ensures rapid energy diversion and minimal voltage overshoot. |
| Package | USC (1.0 × 0.6 × 0.35 mm) - Ultra-compact footprint compatible with fine-pitch PCB layouts and automated SMT placement. |
Pinout & Package
DF2B18FU,H3F uses the USC (Ultra Small Chip) surface-mount package measuring 1.0 mm × 0.6 mm × 0.35 mm with a typical weight of 4.5 mg. The device has two terminals in a common-cathode configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode 1 | Input terminal for first protected line (e.g., USB D+); conducts during negative transients. |
| Pin 2 | Cathode (common) | Shared cathode node tied to ground or reference plane; completes conduction path for both polarities. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including infotainment and body control modules per stress test requirements. |
| Bidirectional ESD protection | Common-cathode dual-diode architecture enables symmetric clamping for ±8 kV IEC61000-4-2 events. |
| Low dynamic resistance | 0.8 Ω ensures sub-nanosecond response and minimal voltage overshoot during fast-rising ESD pulses. |
| 10 pF capacitance | Preserves signal integrity on high-speed interfaces such as USB 2.0, HDMI, and MIPI D-PHY up to 480 Mbps. |
| ±30 kV ESD rating | Exceeds IEC61000-4-2 Level 4 requirements, supporting robust field reliability in consumer and automotive end equipment. |
Applications
| USB 2.0 Interface Protection | Automotive Infotainment Display Port |
|---|---|
Use Scenario: Protecting D+ and D− lines of USB 2.0 host/device ports against ESD during cable insertion and hot-plug events. IC Role / Device Role / Timing Role: Bidirectional transient voltage suppressor placed directly at connector entry point. Use Value: 10 pF capacitance avoids signal rise-time degradation while clamping to 9 V at 1 A ensures safe operation of USB PHY ICs. | Use Scenario: Safeguarding LVDS or FPD-Link II video data lanes between head unit and TFT display in vehicles. IC Role / Device Role / Timing Role: ESD shunt element mounted adjacent to display connector to meet ISO10605 ±30 kV air discharge requirement. Use Value: AEC-Q101 qualification and -55 °C to +150 °C operation support under-dash mounting with no derating needed. |
| Smartphone Audio Jack Protection | Industrial HMI Touchscreen Interface |
Use Scenario: Shielding 3.5 mm audio jack microphone and headset lines from user-hand ESD in handheld devices. IC Role / Device Role / Timing Role: Low-capacitance ESD diode array integrated into jack PCB layout to minimize trace length to protected nodes. Use Value: 0.8 Ω dynamic resistance enables clamping within 1 ns, preventing latch-up in audio codec input stages. | Use Scenario: Securing projected capacitive touchscreen controller I²C bus lines exposed on front-panel connectors. IC Role / Device Role / Timing Role: Point-of-entry protection device placed before ESD-sensitive touch controller IC inputs. Use Value: 16.2 V VRWM allows compatibility with 3.3 V and 5 V I²C systems while maintaining >2 V margin to breakdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD2E001DRYR | 0.5 pF lower capacitance (9.5 pF), same 16 V VRWM, but not AEC-Q101 qualified. | Suitable for consumer USB ports; lacks automotive qualification and higher ESD rating (±8 kV vs ±30 kV). | Select when ultra-low capacitance is critical and automotive qualification is unnecessary. |
| ESD5Z3.3T5G | Lower VRWM (3.3 V), higher capacitance (30 pF), AEC-Q101 qualified, ±25 kV ESD rating. | Targeted for low-voltage logic lines (e.g., GPIO, reset), not 12–16 V signal rails. | Choose only for sub-5 V applications where tighter clamping voltage is required over bandwidth preservation. |
Compared with TPD2E001DRYR and ESD5Z3.3T5G, the DF2B18FU,H3F uniquely balances automotive qualification, ±30 kV ESD immunity, and 10 pF capacitance-making it optimal for 12–16 V high-speed data lines where both reliability and signal fidelity are mandatory.
Availability
DF2B18FU,H3F is available at Aetrix Electronics and suitable for automotive infotainment systems, industrial HMI interfaces, and consumer USB 2.0 peripherals requiring stable component supply across extended product lifecycles.
Supply support for DF2B18FU,H3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on automotive, industrial, and consumer applications.
The DF2B18FU,H3F belongs to Toshiba's AEC-Q101-qualified ESD protection diode family, engineered specifically for high-reliability transient suppression in space-constrained automotive and portable electronics.
FAQ
What is the maximum working voltage supported by DF2B18FU,H3F?
The DF2B18FU,H3F has a working peak reverse voltage (VRWM) of 16.2 V, meaning it can continuously block up to this DC or peak AC voltage without significant leakage. This value is guaranteed minimum per specification, with typical operation up to 12 V recommended for margin. Exceeding VRWM risks increased reverse current and potential thermal runaway under sustained bias.
Is DF2B18FU,H3F suitable for USB 2.0 data line protection?
Yes, DF2B18FU,H3F is explicitly suited for USB 2.0 protection due to its 10 pF total capacitance at 0 V and 1 MHz, which preserves signal integrity at 480 Mbps without measurable eye diagram degradation. Its 9 V clamping voltage at 1 A and bidirectional architecture ensure reliable suppression of ESD events on D+ and D− lines.
Does DF2B18FU,H3F require external biasing or control circuitry?
No, DF2B18FU,H3F is a passive, unidirectional dual-diode ESD suppressor with common-cathode configuration. It requires no external power, bias, or control signals. It operates automatically during overvoltage transients by forward-conducting when voltage exceeds its breakdown threshold, returning to high-impedance state once the event subsides.
What is the thermal performance limit of DF2B18FU,H3F during repeated ESD events?
The DF2B18FU,H3F has a junction temperature range of -55 °C to +150 °C and is rated for 80 W peak pulse power. However, repetitive ESD events must be spaced to allow thermal dissipation; the 4.5 mg package mass and low thermal resistance enable recovery within microseconds, but sustained bursts exceeding 10 Hz may cause cumulative heating and reliability degradation.
How does DF2B18FU,H3F differ from standard Zener diodes used for ESD protection?
Unlike general-purpose Zener diodes, DF2B18FU,H3F is optimized for ESD with tightly controlled dynamic resistance (0.8 Ω), low capacitance (10 pF), and guaranteed IEC61000-4-2/ISO10605 performance. Standard Zeners exhibit higher capacitance, slower response, and inconsistent clamping behavior under nanosecond transients-making DF2B18FU,H3F superior for high-speed interface protection.
DF2B18FU,H3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Package/Case:
- SC-76, SOD-323
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 12V
- Voltage - Breakdown (Min):
- 16.2V
- Voltage - Clamping (Max) @ Ipp:
- 33V
- Current - Peak Pulse (10/1000µs):
- 2.5A (8/20µs)
- Power - Peak Pulse:
- 80W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- 9pF @ 1MHz
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- USC
DF2B18FU,H3F FAQ
1.How can I place an order for DF2B18FU,H3F through Aetrix?
Please submit a Request for Quotation (RFQ) for DF2B18FU,H3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DF2B18FU,H3F reliable?
The price and inventory of DF2B18FU,H3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DF2B18FU,H3F is usually 5 days.
3.What payment methods are accepted for DF2B18FU,H3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DF2B18FU,H3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DF2B18FU,H3F?
DF2B18FU,H3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DF2B18FU,H3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DF2B18FU,H3F?
For technical support, including DF2B18FU,H3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DF2B18FU,H3F requirements.
6.How does Aetrix verify that DF2B18FU,H3F is sourced from the original manufacturer or authorized distributors?
All DF2B18FU,H3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DF2B18FU,H3F meets industry standards.
7.What is the process for return or replacement of DF2B18FU,H3F?
All DF2B18FU,H3F units undergo pre-shipment inspection (PSI). If there is an issue with DF2B18FU,H3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DF2B18FU,H3F part is unused and in its original packaging.
Return procedure for DF2B18FU,H3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DF2B18FU,H3F Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
